Wing MJE3055T Silicon epitaxial planar transistor Datasheet

SILICON EPITAXIAL
PLANAR TRANSISTOR
MJE3055T/MJE2955T
GENERAL DESCRIPTION
Complementary, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
TO-220
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
Tmb 25
IC = 4.0A; IB = 0.4A
IF = 4.0A
MIN
1.5
MAX
70
60
10
75
1.2
2.0
-
UNIT
V
V
A
A
W
V
V
s
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
MIN
-55
-
MAX
70
60
5
10
6
75
150
150
UNIT
V
V
v
A
A
W
MAX
1.0
2.5
UNIT
mA
mA
v
V
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
CONDITIONS
VCB=70V
VEB=5V
IC=1mA
IC = 4.0A; IB = 0.4A
IC = 4.0A; VCE = 4V
IC = 0.5A; VCE = 10V
VCB = 10V
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
MIN
60
20
5
1.2
100
350
MHz
pF
us
us
us
Similar pages