Preliminary Datasheet BCR2PM-14LE R07DS0233EJ0200 Rev.2.00 Dec 24, 2014 800V – 2A - Triac Low Power Use Features • Planar Passivation Type • The product guaranteed maximum junction temperature 150°C. • IT (RMS) : 2 A • VDRM : 800 V (Tj = 125°C) • IFGT I, IRGT I, IRGT III : 10 mA Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Electric rice cooker, electric pot, and controller for other heater Precautions on Usage When the BCR2PM-14LE is used, do not attach the heat radiating fin. Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 VDRM Non-repetitive peak off-state voltageNote1 VDSM R07DS0233EJ0200 Rev.2.00 Dec 24, 2014 Voltage class 14 800 700 840 Unit Condition V V V Tj = 125°C Tj = 150°C Page 1 of 6 BCR2PM-14LE Preliminary Parameter RMS on-state current Symbol IT (RMS) Ratings 2 Unit A Surge on-state current ITSM 10 A I2t 0.41 A2 s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 1 – 40 to +150 – 40 to +150 2.0 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave 360° conduction 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage Note2 Gate trigger current Note2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltage Note3 Symbol IDRM VTM Min. — — Typ. — — Max. 1.0 2.1 Unit mA V Ι VFGTΙ — — 2.0 V ΙΙ VRGTΙ — — 2.0 V ΙΙΙ VRGTΙΙΙ — — 2.0 V Ι IFGTΙ — — 10 mA ΙΙ IRGTΙ — — 10 mA ΙΙΙ IRGTΙΙΙ — — 10 mA VGD Rth (j-a) 0.1 — — — — 45 V °C/W (dv/dt)c 0.5 — — V/μs Test conditions Tj = 150°C, VDRM applied Tj = 25°C, ITM = 3 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 150°C, VD = 1/2 VDRM Junction to ambient, Natural convection Tj = 125°C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –1.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS0233EJ0200 Rev.2.00 Dec 24, 2014 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 6 BCR2PM-14LE Preliminary Performance Curves Rated Surge On-State Current 10 102 7 Tj = 25°C 5 3 2 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 10–1 5 4 3 2 1 2 3 5 7 101 2 3 5 7 102 Gate Trigger Current vs. Junction Temperature PGM = 1 W VGM = 6 V PG(AV) = 0.1 W VGT IGM = 1 A IRGT I, IRGT III 7 VGD = 0.1 V 5 100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (II and III) 103 7 5 Typical Example 3 2 IFGT I, IRGT I, IRGT III 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100120 140160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 103 7 5 Typical Example 3 2 VFGT I, VRGT I 102 7 5 3 2 VRGT III 101 –60 –40–20 0 20 40 60 80 100120 140 160 Junction Temperature (°C) R07DS0233EJ0200 Rev.2.00 Dec 24, 2014 Transient Thermal Impedance (°C/W) Gate Voltage (V) 6 Conduction Time (Cycles at 60 Hz) 10–1 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 7 On-State Voltage (V) 3 2 100 7 5 3 2 8 0 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 101 7 5 3 2 9 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 ( Natural Convection No Fins Print Board t = 1.6 mm Solder Land : φ2 mm ) 10–1 101 2 3 5 7102 2 3 5 7 103 2 3 5 7104 2 3 5 7 105 Conduction Time (Cycles at 60 Hz) Page 3 of 6 BCR2PM-14LE Preliminary Allowable Ambient Temperature vs. RMS On-State Current 160 1.6 140 1.4 360° Conduction 1.2 Resistive, inductive loads 1.0 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1.0 1.2 100 80 ( Natural Convection No Fins Print Board t = 1.6 mm Solder Land : φ2 mm 60 40 20 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature Typical Example 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 102 7 5 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120140 160 Junction Temperature (°C) Latching Current vs. Junction Temperature Breakover Voltage vs. Junction Temperature Distribution T2+, G– 1 10 7 5 3 2 100 7 5 T2+, G+ 3 2 T2–, G– –1 –40 103 7 5 4 3 2 Junction Temperature (°C) Typical Example 0 40 80 120 Junction Temperature (°C) R07DS0233EJ0200 Rev.2.00 Dec 24, 2014 160 ) Curves apply regardless of conduction angle Resistive, inductive loads RMS On-State Current (A) 106 7 5 3 2 10 120 0 0 1.4 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 0 0 Latching Current (mA) Ambient Temperature (°C) 1.8 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100120 140 160 Junction Temperature (°C) Page 4 of 6 Preliminary 160 Typical Example Tj = 125°C 140 Breakover Voltage (dv/dt = xV/μs) Breakover Voltage (dv/dt = 1V/μs) 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 120 100 80 I Quadrant III Quadrant 60 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) 160 40 20 0 100 2 3 5 710 01 2 3 5 7102 2 3 5 7103 Rate of Rise of Off-State Voltage (V/μs) 120 100 80 60 40 20 0 100 2 3 5 710 01 2 3 5 7102 2 3 5 7103 Rate of Rise of Off-State Voltage (V/μs) Gate Trigger Current vs. Gate Current Pulse Width 100 (%) Conditions VD = 200 V IT = 1 A τ = 500 μs Tj = 125°C 3 2 Gate Trigger Current (tw) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Commutation Characteristics 101 7 Typical Example 5 III Quadrant 100 7 5 Minimum Characteristics Value 3 2 10–1 –1 10 2 3 5 7 100 I Quadrant 2 3 Typical Example Tj = 150°C 140 Breakover Voltage (dv/dt = xV/μs) Breakover Voltage (dv/dt = 1V/μs) 100 (%) BCR2PM-14LE 5 7 101 103 7 5 Typical Example IRGT III 3 2 102 7 5 3 IFGT I IRGT I 2 101 100 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (μs) Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V V A 6V RG Test Procedure I V RG Test Procedure II 6Ω A 6V V RG Test Procedure III R07DS0233EJ0200 Rev.2.00 Dec 24, 2014 Page 5 of 6 BCR2PM-14LE Preliminary Package Dimensions Package Name TO-220F(2) JEITA Package Code SC-67 RENESAS Code PRSS0003AA-B Previous Code T220F(2) MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.5Max 0.8 2.54 0.5 2.6 4.5 2.54 Ordering Information Orderable Part Number Packing Quantity BCR2PM-14LE#B00 Bag 100 pcs. BCR2PM-14LE-AS#B00 Tube 50 pcs. Note : Please confirm the specification about the shipping in detail. R07DS0233EJ0200 Rev.2.00 Dec 24, 2014 Remark Straight type AS Lead form Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333 Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 12F., 234 Teheran-ro, Gangnam-Ku, Seoul, 135-920, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2014 Renesas Electronics Corporation. All rights reserved. Colophon 4.0