CMT05N50 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Higher Current Rating speed power switching applications such as switching Lower rDS(ON), Lower Capacitances regulators, conveters, solenoid and relay drivers. Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP D SOURCE DRAIN GATE Top View G S 1 2 N-Channel MOSFET 3 ORDERING INFORMATION Part Number Package CMT05N50N220 TO-220 CMT05N50N220FP TO-220FP ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous Symbol Value Unit A ID 5.0 IDM 18 Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation PD 96 W － Pulsed (Note 1) Derate above 25℃ Single Pulse Avalanche Energy (Note 2) Operating and Storage Temperature Range Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation 0.77 W/℃ EAS 125 mJ TJ, TSTG -55 to 150 ℃ θJC 1.70 ℃/W θJA 62 TL 300 ℃ Page 1 CMT05N50 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT05N50 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 500 Typ Max Units V (VGS = 0 V, ID = 250 μA) IDSS Drain-Source Leakage Current μA (VDS = 500V, VGS = 0 V) 25 Gate-Source Leakage Current-Forward IGSSF 100 nA IGSSR -100 nA 4.0 V (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) VGS(th) Gate Threshold Voltage 2.0 (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 4) RDS(on) 1.5 gFS Input Capacitance Ciss 520 730 Coss 170 240 pF pF Crss 11 20 pF (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time mhos td(on) 7.0 10 (VDD = 250 V, ID = 5 A, tr 9.0 20 ns ns RG = 9.1Ω, VGS = 10 V) (Note 4) td(off) 20 40 ns tf 10 20 Qg 10 Qgs 2 nC nC Qgd 3 nC LD 4.5 nH LS 7.5 nH μC Rise Time Turn-Off Delay Time 2.8 Ω Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 4) Fall Time Total Gate Charge (VDS = 400V, ID = 5A Gate-Source Charge VGS = 10 V) (Note 4) Gate-Drain Charge Internal Drain Inductance ns (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Qrr 1.8 IF = 5A, di/dt = 100A/μs , TJ = 25℃ ton ** trr 415 IS = 5A, VGS = 0 V VSD Reverse Recovery Time Diode Forward Voltage ns 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25Ω (3) ISD ≦ 4.5A, di/dt ≦ 75A/μs, VDD ≦ V(BR)DSS, TJ ≦ 150℃ ** Negligible, Dominated by circuit inductance 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 2 CMT05N50 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 3 CMT05N50 POWER MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 A1 c e b e1 L1 φ Side View Front View TO-220FP R I 0 0.1 .5 0 C 8± 3.1 J R1 B H Q D R1 .5 0 A A B C D E E H I O P K G J K 1. R M N 60 O P G Q b R b b1 b2 e e Front View 2006/10/11 Rev. 1.1 N M b2 b1 R Side View Back View Champion Microelectronic Corporation Page 4 CMT05N50 POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan 2006/10/11 Rev. 1.1 T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 Champion Microelectronic Corporation Page 5