Intersil BYW51-100 8a, 100v - 200v ultrafast dual diode Datasheet

BYW51-100, BYW51-150, BYW51-200
June 1995
File Number
8A, 100V - 200V Ultrafast Dual Diodes
Features
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (tRR < 35ns). They use a planar
ion-implanted epitaxial construction.
• Ultra Fast Recovery Time (<35ns)
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-widthmodulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
• Low Forward Voltage
• Low Thermal Resistance
• Planar Design
• Wire-Bonded Construction
Applications
• General Purpose
• Power Switching Circuits to 100kHz
Ordering Information
• Full-Wave Rectification
PACKAGING AVAILABILITY
PART NUMBER
1412.2
PACKAGE
BRAND
BYW51-100
TO-220AB
BYW51100
BYW51-150
TO-220AB
BYW51150
BYW51-200
TO-220AB
BYW51200
Package
JEDEC TO-220AB
ANODE 1
CATHODE
ANODE 2
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A1
Absolute Maximum Ratings
A2
Per Junction
BYW51-100
BYW51-150
BYW51-200
UNITS
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . VRRM
100
150
200
V
Maximum Peak Surge Voltage . . . . . . . . . . . . . . . . . . . . . . VRSM
110
165
220
V
Repetitive Peak Surge Current. . . . . . . . . . . . . . lFRM, tP < 10µs
Nonrepetitive Peak Surge Current . . . . . . . . . . . . lF(RMS), Total
100
100
100
A
20
20
20
A
Average Rectified forward Current . . . . . . . . . . . . . . lF(AV), Total
TC = +125oC, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
8
8
A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . lFSM
tP = 10ms, Sinusoidal
100
100
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . PD, TC = +125oC
20
20
20
W
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ
-40 + 150
-40 + 150
-40 + 150
oC
TL (Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance > 1/8 in. (3.17mm) From Case For 10s max.
260
260
260
oC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
BYW51-100, BYW51-150, BYW51-200
Electrical Specifications
Per Junction
TEST CONDITIONS
LIMITS
TJ
oC
VOLTAGE
VR
V
CURRENT
iF
A
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
25
100
-
-
5
-
-
-
-
µA
150
-
-
-
-
5
-
-
µA
200
-
-
-
-
-
-
5
µA
100
-
-
1
-
-
-
-
mA
150
-
-
-
-
1
-
-
mA
200
-
-
-
-
-
-
1
mA
25
-
8
-
0.95
-
0.95
-
0.95
V
100
-
8
-
0.89
-
0.89
-
0.89
V
25
-
1 (Note 1)
-
35
-
35
-
35
ns
RθJC, Per Leg
-
-
-
2.5
-
2.5
-
2.5
oC/W
RθJC, Total
-
-
-
1.3
-
1.3
-
1.3
oC/W
RθJA
-
-
-
60
-
60
-
60
oC/W
10
0
SYMBOL
IR
100
VF
tRR
CJ
25
NOTE:
1. dIF/dt > 50A/µs, IRM(rec) <1A, IRR = 0.25A.
2
BYW51-100
BYW51-150
All types (typ.) 40
BYW51-200
pF
BYW51-100, BYW51-150, BYW51-200
Typical Performance Curves
4.0
REAPPLIED VR(PK) = VRM
3.5
140
RθJC , THERMAL IMPEDANCE (oC/W)
IFSM , PEAK SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
160
120
100
80
TJ = 100oC
60
40
20
3.0
2.5
2.0
1.5
1.0
0.5
0
1
10
0
100
1
N, NUMBER OF HALF-CYCLES IN SURGE DURATION AT 50Hz
FIGURE 1. PEAK SURGE FORWARD CURRENT vs SURGE
DURATION
10,000
TJ = -55oC
TJ = +150oC
TJ = +25oC
10
TJ = +100oC
TJ = +125oC
TJ = +150oC
1
0.1
0.01
0
0.2
1000
100
FIGURE 2. THERMAL IMPEDANCE vs PULSE WIDTH
(PER JUNCTION)
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
100
10
tP, PULSE WIDTH (ms)
0.4
0.6
0.8
1
1.2
1.4
1.6
VF, FORWARD VOLTAGE DROP (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
1000
TJ = +125oC
100
TJ = +100oC
10
1
TJ = +25oC
0.1
0.01
0.01
0.1
1
10
100
1000
VRM , VOLTAGE IN % RATED VRRM (V)
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
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