NXP BC858 Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Apr 09
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 65 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
handbook, halfpage
MARKING CODE(1)
TYPE NUMBER
BC856
3D*
BC856A
3A*
BC856B
3B*
BC857
3H*
BC857A
3E*
BC857B
3F*
BC857C
3G*
BC858B
3K*
3
3
1
2
1
Top view
2
MAM256
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BC856
−
plastic surface mounted package; 3 leads
SOT23
BC857
−
plastic surface mounted package; 3 leads
SOT23
BC858
−
plastic surface mounted package; 3 leads
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC856
−
−80
V
BC857
−
−50
V
BC858
−
−30
V
BC856
−
−65
V
BC857
−
−45
V
BC858
−
−30
V
−
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
2004 Jan 16
3
TYPICAL
UNIT
500
K/W
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
UNIT
−
−1
−15
nA
−
−
−4
μA
−
−
−100
nA
BC856
125
−
475
BC857
125
−
800
BC856A; BC857A
125
−
250
BC856B; BC857B; BC858B
220
−
475
BC857C
420
−
800
IC = −10 mA; IB = −0.5 mA −
−75
−300
mV
IC = −100 mA; IB = −5 mA; −
note 1
−250
−650
mV
IC = −10 mA; IB = −0.5 mA −
−700
−
mV
IC = −100 mA; IB = −5 mA; −
note 1
−850
−
mV
IC = −2 mA; VCE = −5 V
−600
−650
−750
mV
IC = −10 mA; VCE = −5 V
−
−
−820
mV
VEB = −5 V; IC = 0
hFE
DC current gain
IC = −2 mA; VCE = −5 V
VBE
MAX.
VCB = −30 V; IE = 0;
Tj = 150 °C
emitter-base cut-off current
VBEsat
TYP.
VCB = −30 V; IE = 0
collector-base cut-off current
IEBO
VCEsat
MIN.
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
−
4.5
−
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
−
−
MHz
F
noise figure
IC = −200 μA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−
2
10
dB
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
MGT711
500
MGT712
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
400
(1)
(1)
−800
300
(2)
−600
(2)
200
(3)
−400
(3)
100
−200
0
−10−2
−10−1
−1
−10
0
−10−2
−102
−103
I C (mA)
−10−1
BC857A; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857A; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MGT713
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−102
−103
I C (mA)
MGT714
handbook, halfpage
−102
(1)
(2)
(3)
−400
(1)
−200
(3) (2)
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857A; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857A; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.4
Fig.5
−10
−102
−103
I C (mA)
(3) Tamb = 150 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 16
−10
Base-emitter voltage as a function of
collector current; typical values.
−600
−10
−10−1
−1
5
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
MGT715
1000
MGT716
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
800
(1)
−800
600
(2)
(1)
−600
400
200
0
−10−2
−10−1
(2)
−400
(3)
−200
−1
−10
(3)
0
−10−2
−102
−103
I C (mA)
−10−1
BC857B; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857B; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.6
Fig.7
DC current gain as a function of collector
current; typical values.
MGT717
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−1
−10
−102
−103
I C (mA)
Base-emitter voltage as a function of
collector current; typical values.
MGT718
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857B; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.8
Fig.9
−102
−103
I C (mA)
(3) Tamb = 150 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 16
−10
6
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
MGT719
1000
MGT720
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
(1)
800
(1)
−800
600
(2)
(2)
−600
400
−400
(3)
(3)
200
0
−10−2
−200
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857C; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857C; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
MGT721
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
MGT722
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857C; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857C; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 16
(3) Tamb = 150 °C.
7
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 16
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
8
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Jan 16
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/06/pp10
Date of release: 2004 Jan 16
Document order number: 9397 750 12397