IXFP34N60X2A X2-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) AEC Q101 Qualified = 600V = 34A 100m N-Channel Enhancement Mode Avalanche Rated TO-220 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 34 A IDM TC = 25C, Pulse Width Limited by TJM 68 A GD G = Gate S = Source IA TC = 25C 10 A EAS TC = 25C 1 J dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 540 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 3 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight S D (Tab) D = Drain Tab = Drain Features International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.0 V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 1.75 mA 100 m DS100912A(5/18) IXFP34N60X2A Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 12 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-220 Outline 20 S 0.8 3230 pF 2000 pF 2 pF 130 486 pF pF 37 ns 60 ns 64 ns 30 ns 56 nC 19 nC 18 nC 0.50 0.23 C/W C/W Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS Pins: 1 - Gate 3 - Source 2 - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 34 A Repetitive, pulse Width Limited by TJM 136 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 17A, -di/dt = 100A/μs 164 1.2 14.4 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Notes: 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP34N60X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 35 80 VGS = 10V VGS = 10V 9V 30 70 25 I D - Amperes 8V I D - Amperes 9V 60 20 7V 15 10 8V 50 40 30 7V 20 6V 5 6V 10 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 VDS - Volts 35 3.8 VGS = 10V 9V 30 VGS = 10V 3.4 8V 3.0 RDS(on) - Normalized 25 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 17A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 30 20 VDS - Volts 7V 20 15 6V 10 2.6 I D = 34A 2.2 1.8 I D = 17A 1.4 1.0 5V 5 0.6 4V 0 0 4.6 1 2 3 4 5 6 0.2 7 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 VGS = 10V 4.2 BVDSS / VGS(th) - Normalized 1.2 3.8 o RDS(on) - Normalized TJ = 125 C 3.4 3.0 2.6 2.2 o TJ = 25 C 1.8 1.4 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.6 0 10 20 30 40 50 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 60 70 80 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP34N60X2A Fig. 8. Input Admittance 40 35 35 30 30 25 25 TJ = 125 C 20 25 C o - 40 C I D - Amperes I D - Amperes Fig. 7. Maximum Drain Current vs. Case Temperature 40 20 15 15 10 10 5 5 0 o o 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance 35 5.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 120 o TJ = - 40 C 30 100 o 25 C 20 80 I S - Amperes g f s - Siemens 25 o 125 C 15 60 40 10 o TJ = 125 C o 20 5 0 TJ = 25 C 0 0 5 10 15 20 25 30 35 40 45 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.9 1.0 1.1 1.2 1.3 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 f = 1 MHz VDS = 300V Capacitance - PicoFarads I D = 17A 8 VGS - Volts 0.8 VSD - Volts I G = 10mA 6 4 2 0 10,000 Ciss 1,000 Coss 100 10 C rss 1 0 5 10 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFP34N60X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 30 25μs 25 100μs 10 20 I D - Amperes E OSS - MicroJoules RDS(on) Limit 15 1 10 o TJ = 150 C o 5 TC = 25 C Single Pulse 1ms 0.1 0 0 100 200 300 VDS - Volts 400 500 10 600 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_34N60X2 (X5-S602) 1-16-18