BZX84-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes 3 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C” in the ordering code. Replace “C” with “B” for ± 2 % tolerance. 2 1 20421 • AEC-Q101 qualified • ESD capability acc. to AEC-Q101: human body model: > 8 kV, machine model: > 800 V PRIMARY CHARACTERISTICS • Base P/N-G3 - green, commercial grade PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V mA Test current IZT 2; 5 VZ specification Pulse current Int. construction Single • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION DEVICE NAME ORDERING CODE BZX84C2V4-G3-08 to BZX84C75-G3-08 BZX84-G-series BZX84B2V4-G3-08 to BZX84B75-G3-08 BZX84C2V4-G3-18 to BZX84C75-G3-18 BZX84B2V4-G3-18 to BZX84B75-G3-18 TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000 10 000 (8 mm tape on 13" reel) 10 000 PACKAGE PACKAGE NAME SOT-23 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 8.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 Ptot 300 mW Thermal resistance junction to ambient air Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 RthJA 420 K/W Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Junction temperature Rev. 1.2, 28-Feb-13 Document Number: 83458 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA MIN. NOM. MAX. REVERSE LEAKAGE CURRENT IR at VR μA DYNAMIC RESISTANCE ZZK at IZT2 ZZ at IZT1 TEMPERATURE COEFFICIENT VZ at IZT1 V 10-4/°C MAX. MAX. MIN. MAX. -4 BZX84C2V4-G G50 2.2 2.4 2.6 5 1 50 1 100 275 -9 BZX84C2V7-G G51 2.5 2.7 2.9 5 1 20 1 100 600 -9 -4 BZX84C3V0-G G52 2.8 3.0 3.2 5 1 10 1 95 600 -9 -3 BZX84C3V3-G G53 3.1 3.3 3.5 5 1 5 1 95 600 -8 -3 BZX84C3V6-G G54 3.4 3.6 3.8 5 1 5 1 90 600 -8 -3 BZX84C3V9-G G55 3.7 3.9 4.1 5 1 3 1 90 600 -7 -3 BZX84C4V3-G G56 4.0 4.3 4.6 5 1 3 1 90 600 -6 -1 BZX84C4V7-G G57 4.4 4.7 5.0 5 1 3 2 80 500 -5 2 BZX84C5V1-G G58 4.8 5.1 5.4 5 1 2 2 60 480 -3 4 BZX84C5V6-G G59 5.2 5.6 6.0 5 1 1 2 40 400 -2 6 BZX84C6V2-G G60 5.8 6.2 6.6 5 1 3 4 10 150 -1 7 BZX84C6V8-G G61 6.4 6.8 7.2 5 1 2 4 15 80 2 7 BZX84C7V5-G G62 7.0 7.5 7.9 5 1 1 5 15 80 3 7 BZX84C8V2-G G63 7.7 8.2 8.7 5 1 0.7 5 15 80 4 7 BZX84C9V1-G G64 8.5 9.1 9.6 5 1 0.5 6 15 100 5 8 BZX84C10-G G65 9.4 10 10.6 5 1 0.2 7 20 150 5 8 BZX84C11-G G66 10.4 11 11.6 5 1 0.1 8 20 150 5 9 BZX84C12-G G67 11.4 12 12.7 5 1 0.1 8 25 150 6 9 BZX84C13-G G68 12.4 13 14.1 5 1 0.1 8 30 170 7 9 BZX84C15-G G69 13.8 15 15.6 5 1 0.05 10.5 30 200 7 9 BZX84C16-G G70 15.3 16 17.1 5 1 0.05 11.2 40 200 8 9.5 BZX84C18-G G71 16.8 18 19.1 5 1 0.05 12.6 45 225 8 9.5 BZX84C20-G G72 18.8 20 21.2 5 1 0.05 14.0 55 225 8 10 BZX84C22-G G73 20.8 22 23.3 5 1 0.05 15.4 55 250 8 10 BZX84C24-G G74 22.8 24 25.6 5 1 0.05 16.8 70 250 8 10 BZX84C27-G G75 25.1 27 28.9 2 0.5 0.05 18.9 80 300 8 10 BZX84C30-G G76 28 30 32 2 0.5 0.05 21.0 80 300 8 10 BZX84C33-G G77 31 33 35 2 0.5 0.05 23.1 80 325 8 10 BZX84C36-G G78 34 36 38 2 0.5 0.05 25.2 90 350 8 10 BZX84C39-G G79 37 39 41 2 0.5 0.05 27.3 130 350 10 12 BZX84C43-G G80 40 43 46 2 0.5 0.05 30.1 150 375 10 12 BZX84C47-G G81 44 47 50 2 0.5 0.05 32.9 170 375 10 12 BZX84C51-G G82 48 51 54 2 0.5 0.05 35.7 180 400 10 12 BZX84C56-G G83 52 56 60 2 0.5 0.05 39.2 200 425 9 11 BZX84C62-G G84 58 62 66 2 0.5 0.05 43.4 215 450 9 12 BZX84C68-G G85 64 68 72 2 0.5 0.05 47.6 240 475 10 12 BZX84C75-G G86 70 75 79 2 0.5 0.05 52.5 255 500 10 12 Rev. 1.2, 28-Feb-13 Document Number: 83458 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE LEAKAGE CURRENT IZT2 mA IR at VR DYNAMIC RESISTANCE ZZK at IZT2 ZZ at IZT1 μA V TEMPERATURE COEFFICIENT VZ at IZT1 10-4/°C MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZX84B2V4-G H50 2.35 2.4 2.45 5 1 50 1 100 275 -9 -4 BZX84B2V7-G H51 2.65 2.7 2.75 5 1 20 1 100 600 -9 -4 BZX84B3V0-G H52 2.94 3.0 3.06 5 1 10 1 95 600 -9 -3 BZX84B3V3-G H53 3.23 3.3 3.37 5 1 5 1 95 600 -8 -3 BZX84B3V6-G H54 3.53 3.6 3.67 5 1 5 1 90 600 -8 -3 BZX84B3V9-G H55 3.82 3.9 3.98 5 1 3 1 90 600 -7 -3 BZX84B4V3-G H56 4.21 4.3 4.39 5 1 3 1 90 600 -6 -1 BZX84B4V7-G H57 4.61 4.7 4.79 5 1 3 2 80 500 -5 2 BZX84B5V1-G H58 5.0 5.1 5.2 5 1 2 2 60 480 -3 4 BZX84B5V6-G H59 5.49 5.6 5.71 5 1 1 2 40 400 -2 6 BZX84B6V2-G H60 6.08 6.2 6.32 5 1 3 4 10 150 -1 7 BZX84B6V8-G H61 6.66 6.8 6.94 5 1 2 4 15 80 2 7 BZX84B7V5-G H62 7.35 7.5 7.65 5 1 1 5 15 80 3 7 BZX84B8V2-G H63 8.04 8.2 8.36 5 1 0.7 5 15 80 4 7 BZX84B9V1-G H64 8.92 9.1 9.28 5 1 0.5 6 15 100 5 8 BZX84B10-G H65 9.8 10 10.2 5 1 0.2 7 20 150 5 8 BZX84B11-G H66 10.8 11 11.2 5 1 0.1 8 20 150 5 9 BZX84B12-G H67 11.8 12 12.2 5 1 0.1 8 25 150 6 9 BZX84B13-G H68 12.7 13 13.3 5 1 0.1 8 30 170 7 9 BZX84B15-G H69 14.7 15 15.3 5 1 0.05 10.5 30 200 7 9 BZX84B16-G H70 15.7 16 16.3 5 1 0.05 11.2 40 200 8 9.5 BZX84B18-G H71 17.6 18 18.4 5 1 0.05 12.6 45 225 8 9.5 BZX84B20-G H72 19.6 20 20.4 5 1 0.05 14 55 225 8 10 BZX84B22-G H73 21.6 22 22.4 5 1 0.05 15.4 55 250 8 10 BZX84B24-G H74 23.5 24 24.5 5 1 0.05 16.8 70 250 8 10 BZX84B27-G H75 26.5 27 27.5 2 0.5 0.05 18.9 80 300 8 10 BZX84B30-G H76 29.4 30 30.6 2 0.5 0.05 21 80 300 8 10 BZX84B33-G H77 32.3 33 33.7 2 0.5 0.05 23.1 80 325 8 10 BZX84B36-G H78 35.3 36 36.7 2 0.5 0.05 25.2 90 350 8 10 BZX84B39-G H79 38.2 39 39.8 2 0.5 0.05 27.3 130 350 10 12 BZX84B43-G H80 42.1 43 43.9 2 0.5 0.05 30.1 150 375 10 12 BZX84B47-G H81 46.1 47 47.9 2 0.5 0.05 32.9 170 375 10 12 BZX84B51-G H82 50 51 52 2 0.5 0.05 35.7 180 400 10 12 BZX84B56-G H83 54.9 56 57.1 2 0.5 0.05 39.2 200 425 9 11 BZX84B62-G H84 60.8 62 63.2 2 0.5 0.05 43.4 215 450 9 12 BZX84B68-G H85 66.6 68 69.4 2 0.5 0.05 47.6 240 475 10 12 BZX84B75-G H86 73.5 75 76.5 2 0.5 0.05 52.5 255 500 10 12 Rev. 1.2, 28-Feb-13 Document Number: 83458 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 Ω 100 TJ = 25 °C 102 IF 5 4 10 3 rzj TJ = 100 °C 1 10-1 33 2 27 22 10 TJ = 25 °C 10-2 18 15 5 4 10-3 12 3 10 2 10-4 10-5 0 6.8/8.2 6.2 1 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward Characteristics Ω 103 mW 500 Tj = 25 °C 7 5 4 400 Rzj 47 + 51 43 39 36 3 Ptot 2 300 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Tamb 18115 Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 10 5.6 1 5 4 3 2 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current Rev. 1.2, 28-Feb-13 5 4 3 negative 2 1 18121 2 positive 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Document Number: 83458 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 2 80 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 18122 3 4 5 0 0 100 V VZ 20 60 40 Fig. 7 - Dynamic Resistance vs. Zener Voltage 80 100 V VZ 18125 Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 V 9 20 7 8 Δ VZ ΔTj 5 mA IZ = 1 mA 20 mA 15 Δ VZ 51 6 5 43 4 10 36 3 5 2 1 0 0 -5 1 2 3 4 5 10 2 100 V 3 4 5 0 VZ 18123 25 0.7 VZ at IZ = 5 mA 40 60 80 100 120 Tj 140 °C Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 20 18126 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage V 1.6 15 1.2 Δ VZ 0.5 8 0.4 7 0.3 0.2 6.2 5.9 0.1 5.6 0 ΔVZ = Rzth x IZ 1.4 10 0.6 Δ VZ IZ = 2 mA -1 1 0.8 0.6 0.4 0.2 0 5.1 -1 - 0.2 3.6 - 0.2 0 18124 20 40 60 80 4.7 100 120 140 C Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Rev. 1.2, 28-Feb-13 - 0.4 18127 1 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Document Number: 83458 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors mA 10 V 5 Tj = 25 °C ΔVZ = Rzth x IZ 4 8 lZ Δ VZ 3 6 IZ = 5 mA 51 43 47 4 2 1 2 IZ = 2 mA 0 0 0 20 40 60 100 V 80 VZ 18128 Tj = 25 °C 10 20 30 40 50 60 70 80 90 100 V VZ Fig. 16 - Breakdown Characteristics 3.9 5.6 2.7 6.8 3.3 4.7 40 0 18113 Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 50 Test current IZ 5 mA 39 lZ 8.2 30 20 Test current IZ 5 mA 10 0 0 1 2 3 4 5 6 7 8 9 10 V VZ 18111 Fig. 14 - Breakdown Characteristics mA 30 lZ 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 18112 10 20 30 40 V VZ Fig. 15 - Breakdown Characteristics Rev. 1.2, 28-Feb-13 Document Number: 83458 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.2, 28-Feb-13 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document Number: 83458 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000