EIC BR1010 Silicon bridge rectifier Datasheet

BR1000 - BR1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forw ard Current Tc=55°C
IF(AV)
10
Amp.
IFSM
300
Amp.
Current Squared Time at t < 8.3 ms.
I2t
160
A2S
Maximum Forw ard Voltage per Diode at IF = 5 Amp.
VF
1.0
Volts
IR
10
µA
IR(H)
200
µA
RθJC
2.5
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Peak Forw ard Surge Current Single half sine w ave
Superimposed on rated load (JEDEC Method)
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : APRIL 23, 1998
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT
AMPERES
RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )
12
10
8
6
4
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x8.2cm x 0.3cm) Al.-PLATE
2
0
300
250
TJ = 50 °C
200
150
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
50
0
0
25
50
75
100
125
150
175
1
CASE TEMPERATURE, ( °C)
PER DIODE
100
Pulse Width = 300 µs
1 % Duty Cycle
10
1.0
TJ = 25 °C
0.1
REVERSE CURRENT, MICROAMPERES
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FORWARD CURRENT, AMPERES
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1
0.01 0
TJ = 25 °C
20
40
60
80
100
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE, VOLTS
1.8
140
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