NEC NE32584C C to ku band super low noise amplifier n-channel hj-fet Datasheet

DATA
DATA SHEET
SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32584C
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32584C is a Hetero Junction FET that utilizes the
PACKAGE DIMENSIONS
(Unit: mm)
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
1.78 ±0.2
TVRO and another commercial systems.
0.5 TYP.
1
FEATURES
L
• Super Low Noise Figure & High Associated Gain
L
1.78 ±0.2
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length : Lg d 0.2 Pm
• Gate Width .. : Wg = 200 Pm
ORDERING INFORMATION
4
L
MARKING
D
STICK
L = 1.7 mm MIN.
NE32584C-T1
Tape & reel
1000 pcs./reel
L = 1.0 r 0.2 mm
NE32584C-T1A
Tape & reel
5000 pcs./reel
L = 1.0 r 0.2 mm
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
–3.0
V
ID
IDSS
mA
IG
100
PA
Ptot
165
mW
Gate Current
Total Power Dissipation
1.
2.
3.
4.
V
Channel Temperature
Tch
150
qC
Storage Temperature
Tstg
–65 to +150
qC
1.7 MAX.
LEAD LENGTH
NE32584C-SL
Drain Current
L
3
SUPPLYING
FORM
0.1
PART NUMBER
D
2
Source
Drain
Source
Gate
RECOMMENDED OPERATING CONDITION (TA = 25 qC)
CHARACTERISTIC
TYP.
MAX.
Unit
VDS
2
3
V
Drain Current
ID
10
20
mA
Input Power
Pin
0
dBm
Drain to Source Voltage
Document No. P12275EJ2V0DS00 (2nd edition)
(Previous No. TC-2515)
Date Published February 1997 N
Printed in Japan
SYMBOL
MIN.
©
1994
NE32584C
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
0.5
10
PA
VGS = ð3 V
VDS = 2 V, VGS = 0 V
Gate to Source Leak Current
IGSO
Saturated Drain Current
IDSS
20
60
90
mA
VGS(off)
ð0.2
ð0.7
ð2.0
V
VDS = 2 V, ID = 100 PA
Transconductance
gm
45
60
mS
VDS = 2 V, ID = 10 mA
Noise Figure
NF
dB
VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain
Ga
Gate to Source Cutoff Voltage
0.45
11.0
0.55
12.5
dB
TYPICAL CHARACTERISTICS (TA = 25 qC)
100
200
80
VGS = 0 V
ID - Drain Current - mA
Pout - Total Power Dissipation - mW
250
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
50
60
–0.2 V
40
–0.4 V
20
–0.6 V
–0.8 V
0
50
100
150
200
250
0
1.5
TA - Ambient Temperature - ¡C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
MSG. - Maximum Stable Gain - dB
MAG. - Maximum Available Gain - dB
|S21s|2 - Forward Insertion Gain - dB
VDS = 2 V
ID - Drain Current - mA
60
40
20
0
–2.0
VDS = 2 V
ID = 10 mA
20
MSG.
16
MAG.
|S21s|2
12
8
0
–1.0
VGS - Gate to Source Voltage - V
2
3.0
VDS - Drain to Source Voltage - V
0
1
2
3
6
8 10 14
f - Frequency - GHz
20
30
NE32584C
Gain Calculations
MAG. =
~S21~
K=
~S12~
~S21~
(K r—K2ð1)
~S12~
1 + ~'~2 ð ~S11~2 ð ~S22~2
2~S12~~S21~
' = S11 • S22 ð S21 • S12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
24
VDS = 2 V
f = 12 GHZ
VDS = 2 V
ID = 10 mA
14
Ga
13
16
1.0
12
0.5
8
NF - Noise Figure - dB
Ga
Ga - Associated Gain - dB
NF - Noise Figure - dB
20
12
2.0
11
1.5
10
Ga - Associated Gain - dB
MSG. =
1.0
0.5
NF
NF
0
1
2
4
6
8 10 14
f - Frequency - GHZ
20
4
30
0
10
20
30
ID - Drain Current - mA
3
NE32584C
Marker
1 : 4 GHz
2 : 8 GHz
3 : 12 GHz
4 : 16 GHz
5 : 18 GHz
S-PARAMETERS
VDS = 2 V, ID = 10 mA
START 2 GHz, STOP 18 GHz, STEP 500 MHz
S11
S12
1.0
+90°
0.5
2.0
+45°
+135°
5
∞
0
1
±180°
4
0
2
3
5
4
3
–45°
–135°
–0.5
2
1
–2.0
–1.0
–90°
Rmax. = 1
Rmax. = 0.25
S21
S22
+90°
1.0
0.5
+135°
2.0
+45°
1
2
5
3
±180°
0
4
0
∞
3
5
–135°
2
4
–45°
–0.5
–90°
–2.0
–1.0
Rmax. = 5
4
1
Rmax. = 1
NE32584C
S-PARAMETER
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
FREQUENCY
GHZ
S11
MAG.
S21
ANG.
MAG.
(deg.)
S12
ANG.
MAG.
(deg.)
S22
ANG.
MAG.
(deg.)
ANG.
(deg.)
2.0
.983
ð29.7
4.648
148.4
.027
69.0
.532
ð22.6
2.5
.973
ð37.2
4.590
140.5
.033
65.3
.520
ð28.3
3.0
.960
ð43.9
4.543
133.2
.038
60.2
.508
ð33.3
3.5
.943
ð51.0
4.428
125.8
.044
55.7
.491
ð39.3
4.0
.922
ð58.0
4.351
118.2
.049
50.2
.472
ð45.1
4.5
.912
ð64.2
4.296
111.3
.054
45.6
.458
ð51.3
5.0
.890
ð70.4
4.174
104.5
.057
41.6
.442
ð57.3
5.5
.870
ð76.4
4.119
97.4
.062
37.7
.428
ð63.6
6.0
.856
ð81.8
4.005
91.0
.064
32.7
.416
ð70.1
6.5
.840
ð87.6
3.940
84.1
.068
29.7
.403
ð76.0
7.0
.827
ð92.5
3.877
78.1
.069
25.1
.395
ð82.4
7.5
.816
ð97.6
3.805
71.4
.072
21.8
.385
ð88.5
8.0
.801
ð102.3
3.720
65.3
.074
18.4
.376
ð94.0
8.5
.784
ð107.5
3.665
58.8
.075
14.9
.372
ð99.9
9.0
.776
ð112.1
3.604
52.6
.075
11.0
.364
ð105.2
9.5
.752
ð116.4
3.529
47.0
.077
9.0
.359
ð112.7
10.0
.734
ð119.8
3.491
41.5
.078
4.9
.357
ð118.8
10.5
.713
ð124.8
3.435
35.6
.079
2.5
.351
ð126.0
11.0
.702
ð128.1
3.438
29.7
.082
ð1.5
.353
ð133.7
11.5
.685
ð131.7
3.434
24.0
.084
ð5.9
.352
ð140.6
12.0
.670
ð136.1
3.429
17.6
.084
ð8.4
.357
ð147.5
12.5
.649
ð139.7
3.443
11.6
.085
ð12.8
.364
ð155.0
13.0
.632
ð143.8
3.423
5.1
.085
ð17.3
.373
ð161.3
13.5
.607
ð148.2
3.414
ð1.6
.086
ð22.1
.384
ð168.0
14.0
.588
ð151.5
3.416
ð7.5
.086
ð25.3
.393
ð174.7
14.5
.559
ð156.1
3.443
ð14.1
.088
ð28.8
.406
178.1
15.0
.535
ð161.6
3.462
ð20.8
.089
ð34.2
.422
171.4
15.5
.506
ð165.4
3.519
ð27.4
.092
ð39.4
.437
164.2
16.0
.474
ð171.6
3.564
ð34.3
.092
ð43.6
.451
156.3
16.5
.445
ð177.1
3.644
ð41.8
.095
ð52.4
.466
150.0
17.0
.397
175.6
3.678
ð49.8
.097
ð58.3
.483
142.0
17.5
.356
167.7
3.754
ð58.6
.097
ð66.4
.484
134.8
18.0
.299
157.7
3.792
ð67.6
.094
ð74.5
.488
126.3
5
NE32584C
AMP. PARAMETERS
VDS = 2 V, ID = 10 mA
6
FREQUENCY
GUmax.
GAmax.
| S21 |2
| S12 |2
GHZ
dB
dB
dB
dB
2.0
29.58
13.35
ð31.40
.16
2.5
27.27
13.24
ð29.58
3.0
25.46
13.15
3.5
23.65
4.0
K
Delay
Mason’sU
G1
G2
ns
dB
dB
dB
.044
14.79
1.44
.19
.044
12.67
1.37
ð28.44
.25
.040
11.02
1.30
12.93
ð27.10
.30
.041
9.53
1.20
22.13
12.77
ð26.26
.37
.042
8.26
1.09
4.5
21.43
12.66
ð25.40
.39
.039
7.74
1.02
5.0
20.16
12.41
ð24.82
.44
.038
6.81
.94
5.5
19.32
12.29
ð24.18
.48
.039
6.14
.88
6.0
18.62
12.05
ð23.83
.52
.036
5.74
.83
6.5
18.00
11.91
ð23.39
.55
.038
5.32
.77
7.0
17.50
11.77
ð23.16
.59
.034
5.00
.74
7.5
17.07
11.61
ð22.83
.60
.037
4.76
.70
8.0
16.53
11.41
ð22.62
.64
.034
4.46
.66
8.5
16.06
11.28
ð22.46
.68
.036
4.13
.65
9.0
15.75
11.14
ð22.44
.72
.035
4.00
.62
9.5
15.18
10.95
ð22.27
.76
.031
3.62
.60
10.0
14.81
10.86
ð22.21
.81
.030
34.849
3.36
.59
10.5
14.38
10.72
ð22.02
.85
.033
34.181
3.09
.57
11.0
14.25
10.73
ð21.68
.84
.033
2.95
.58
11.5
14.04
10.72
ð21.53
.87
.032
2.75
.57
12.0
13.88
10.70
ð21.55
.89
.035
2.59
.59
12.5
13.73
10.74
ð21.41
.91
.034
2.38
.62
13.0
13.56
10.69
ð21.36
.94
.036
31.704
2.22
.65
13.5
13.35
10.66
ð21.34
.98
.037
26.609
1.99
.69
14.0
13.24
10.67
ð21.32
1.00
.033
26.243
1.85
.73
14.5
13.15
15.61
10.74
ð21.11
1.00
.037
27.185
1.63
.78
15.0
13.10
15.71
10.79
ð21.05
1.01
.037
26.453
1.46
.85
15.5
13.14
15.59
10.93
ð20.76
1.00
.036
28.874
1.29
.92
16.0
13.13
15.26
11.04
ð20.77
1.01
.039
28.826
1.11
.99
16.5
13.25
15.65
11.23
ð20.46
1.00
.042
30.042
.96
1.06
17.0
13.21
15.45
11.31
ð20.25
1.00
.044
31.112
.75
1.16
17.5
13.24
14.73
11.49
ð20.28
1.04
.049
26.111
.59
1.16
18.0
13.16
14.20
11.58
ð20.55
1.09
.050
22.789
.41
1.18
NE32584C
S-PARAMETER
MAG. AND ANG.
VDS = 2 V, ID = 15 mA
FREQUENCY
GHZ
S11
MAG.
S21
ANG.
MAG.
S12
ANG.
(deg.)
MAG.
S22
ANG.
(deg.)
MAG.
ANG.
(deg.)
(deg.)
2.0
.981
ð30.4
5.265
147.5
.062
71.1
.484
ð21.9
3.0
.955
ð44.8
5.113
132.2
.037
60.9
.460
ð32.3
4.0
.911
ð59.0
4.878
116.9
.047
52.4
.426
ð43.9
5.0
.877
ð71.4
4.647
103.2
.055
43.1
.396
ð55.2
6.0
.839
ð82.9
4.432
89.7
.061
35.6
.371
ð67.4
7.0
.809
ð93.5
4.268
76.8
.067
28.1
.351
ð79.2
8.0
.781
ð103.1
4.085
64.1
.070
22.6
.334
ð90.4
9.0
.752
ð112.7
3.942
51.5
.075
15.5
.325
ð101.0
10.0
.710
ð120.6
3.805
40.6
.079
9.1
.319
ð114.1
11.0
.679
ð128.7
3.736
28.7
.082
2.3
.318
ð129.0
12.0
.646
ð136.2
3.723
16.8
.084
ð5.0
.324
ð142.9
13.0
.608
ð143.9
3.712
4.4
.085
ð13.4
.343
ð156.3
14.0
.562
ð151.5
3.699
ð8.2
.088
ð20.8
.365
ð169.8
15.0
.504
ð160.6
3.738
ð21.4
.091
ð29.5
.395
176.1
16.0
.446
ð170.5
3.845
ð34.9
.093
ð40.4
.429
160.6
17.0
.367
177.0
3.949
ð50.4
.096
ð54.5
.466
145.5
18.0
.273
160.9
4.050
ð68.1
.099
ð72.1
.473
130.2
ANG.
MAG.
ANG.
MAG.
S-PARAMETER
MAG. AND ANG.
VDS = 2 V, ID = 20 mA
FREQUENCY
GHZ
S11
MAG.
S21
ANG.
MAG.
(deg.)
S12
(deg.)
S22
(deg.)
ANG.
(deg.)
2.0
.979
ð30.6
5.586
147.1
.025
69.2
.456
ð21.4
3.0
.950
ð45.1
5.411
131.7
.035
61.0
.431
ð31.4
4.0
.907
ð59.3
5.136
116.3
.045
52.8
.398
ð42.3
5.0
.869
ð71.7
4.882
102.6
.053
44.7
.368
ð53.4
6.0
.832
ð83.2
4.644
89.2
.059
37.0
.345
ð65.3
7.0
.801
ð93.6
4.459
76.4
.065
30.1
.327
ð76.8
8.0
.772
ð103.1
4.255
63.7
.070
24.7
.312
ð87.4
9.0
.744
ð112.8
4.108
51.3
.074
18.1
.303
ð97.7
10.0
.702
ð120.3
3.958
40.2
.077
11.4
.298
ð110.8
11.0
.671
ð128.3
3.891
28.5
.082
4.8
.297
ð125.7
12.0
.634
ð136.0
3.871
16.7
.086
ð2.3
.304
ð139.0
13.0
.597
ð143.3
3.856
4.3
.087
ð11.1
.325
ð153.3
14.0
.551
ð150.5
3.839
ð8.2
.090
ð18.9
.348
ð166.8
15.0
.495
ð159.3
3.877
ð21.6
.094
ð29.0
.384
179.4
16.0
.434
ð169.2
3.976
ð34.7
.094
ð38.0
.421
163.1
17.0
.357
179.6
4.079
ð50.2
.098
ð53.0
.458
148.0
18.0
.261
164.4
4.195
ð67.7
.098
ð68.9
.469
132.4
7
NE32584C
S-PARAMETER
MAG. AND ANG.
VDS = 1 V, ID = 10 mA
FREQUENCY
GHZ
S11
MAG.
S21
ANG.
MAG.
S12
ANG.
(deg.)
MAG.
S22
ANG.
(deg.)
MAG.
ANG.
(deg.)
(deg.)
2.0
.987
ð29.7
4.627
148.3
.028
70.0
.475
ð22.4
3.0
.964
ð43.9
5.522
133.2
.040
59.5
.451
ð33.0
4.0
.927
ð58.0
4.335
118.2
.051
50.7
.416
ð44.9
5.0
.894
ð70.5
4.158
104.5
.060
41.7
.386
ð57.0
6.0
.860
ð82.0
3.987
91.0
.069
33.0
.361
ð69.9
7.0
.833
ð92.5
3.854
78.2
.073
25.6
.340
ð82.0
8.0
.806
ð102.3
3.701
65.4
.078
17.4
.321
ð94.2
9.0
.780
ð112.3
3.587
52.8
.082
10.4
.310
ð105.3
10.0
.739
ð120.1
3.475
41.6
.086
4.9
.303
ð119.5
11.0
.710
ð128.4
3.417
29.8
.090
ð3.4
.300
ð135.2
12.0
.673
ð136.6
3.415
17.7
.092
ð11.5
.305
ð149.4
13.0
.634
ð144.6
3.410
5.3
.092
ð19.3
.321
ð163.9
14.0
.588
ð152.5
3.399
ð7.4
.095
ð27.4
.342
ð177.3
15.0
.532
ð162.0
3.455
ð20.7
.100
ð39.0
.372
168.5
16.0
.473
ð172.9
3.557
ð34.3
.103
ð50.0
.403
152.2
17.0
.392
173.7
3.667
ð49.9
.107
ð64.7
.435
137.4
18.0
.298
155.7
3.768
ð67.9
.111
ð80.8
.435
121.6
ANG.
MAG.
ANG.
MAG.
S-PARAMETER
MAG. AND ANG.
VDS = 3 V, ID = 10 mA
FREQUENCY
GHZ
S11
MAG.
S21
ANG.
MAG.
(deg.)
8
S12
(deg.)
S22
(deg.)
ANG.
(deg.)
2.0
.989
ð29.2
4.146
149.0
.027
69.6
.548
ð21.8
3.0
.967
ð43.1
4.067
134.1
.038
59.5
.525
ð32.5
4.0
.934
ð57.2
3.923
119.1
.048
50.5
.492
ð44.2
5.0
.901
ð69.6
3.779
105.5
.055
41.0
.464
ð55.9
6.0
.872
ð81.0
3.645
92.0
.062
34.5
.439
ð68.9
7.0
.847
ð91.7
3.542
79.1
.066
25.9
.420
ð81.0
8.0
.823
ð101.6
3.412
66.2
.070
19.2
.400
ð92.8
9.0
.798
ð111.6
3.319
53.5
.071
12.8
.391
ð104.0
10.0
.757
ð119.4
3.226
42.4
.075
7.3
.382
ð117.6
11.0
.730
ð127.7
3.183
30.3
.077
0.3
.376
ð132.8
12.0
.698
ð135.9
3.188
18.2
.081
ð6.0
.379
ð146.0
13.0
.661
ð144.1
3.192
5.7
.081
ð13.0
.395
ð159.7
14.0
.617
ð152.5
3.185
ð7.1
.082
ð20.4
.415
ð172.7
15.0
.561
ð162.2
3.239
ð20.4
.084
ð29.2
.440
173.9
16.0
.503
ð173.3
3.353
ð33.9
.087
ð38.8
.474
159.0
17.0
.428
172.5
3.459
ð49.6
.091
ð52.5
.506
145.2
18.0
.332
153.5
3.579
ð67.5
.092
ð68.5
.515
130.6
NE32584C
NOISE PARAMETER
<TYPICAL CONSTANT NOISE FIGURE CIRCLE>
1
0.6
VDS = 2 V
ID = 10 mA
f = 12 GHZ
2
0.2
5
Γopt
*
0.8 dB
0.7 dB
0
0.2
0.6
1.0
∞
2.0
–5
–0.2
–2
–0.6
–1
<NOISE PARAMETER>
VDS = 2 V, ID = 10 mA
*opt.
Freq.
(GHz)
NFmin.
(dB)
Ga
(dB)
MAG.
ANG. (deg.)
2.0
0.29
20.0
0.86
22
0.27
4.0
0.30
18.3
0.76
45
0.25
6.0
0.33
16.5
0.69
70
0.18
8.0
0.36
15.0
0.63
96
0.11
10.0
0.40
13.6
0.59
122
0.08
12.0
0.45
12.5
0.54
147
0.04
14.0
0.54
12.0
0.48
171
0.04
16.0
0.68
11.8
0.40
ð165
0.05
18.0
0.85
11.5
0.31
ð144
0.06
Rn/50
9
NE32584C
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
[NE32584C]
Soldering process
Soldering conditions
Infrared ray reflow
Peak package’s surface temperature: 230 °C or below,
Reflow time: 30 seconds or below (210 °C or higher),
Number of reflow process: 1, Exposure limit*: None
Partial heating method
Terminal temperature: 230 °C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
Symbol
IR30-00
* Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 °C and relative humidity at 65 % or less.
Note Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
10
NE32584C
[MEMO]
11
NE32584C
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5