HANBit HMF51232J4 FLASH-ROM MODULE 2MByte (512K x 32-Bit) – 68-Pin JLCC Part No. HMF51232J4 GENERAL DESCRIPTION The HMF51232J4 is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit configuration. The module consists of four 512Kx 8 FROM mounted on a 68 -pin, JLCC FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE1, /CE2, /CE3, /CE4) are used to enable the module ’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition, the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power s upply and all inputs and outputs are TTL-compatible. FEATURES PIN ASSIGNMENT DQ16 A18 A17 /CE4 /CE3 /CE2 /CE1 NC Vcc NC NC /OE /WE A16 A15 A14 DQ15 w Access time : 55,70, 90 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 68-pin JLCC w Minimum 1,000,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection OPTIONS MARKING w Timing 55ns access -55 70ns access -70 90ns access -90 120ns access -120 DQ17 DQ18 DQ19 Vss DQ20 DQ21 DQ22 DQ23 Vcc DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 10 9 8 URL: www.hbe.co.kr REV.02(August,2002) 6 5 4 3 2 1 68 67 66 65 64 63 62 61 60 59 12 58 13 57 14 56 15 55 16 54 17 53 18 52 19 51 20 50 21 49 22 48 23 47 24 46 25 45 26 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 w Packages 68-pin JLCC 7 11 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ9 DQ8 Vcc DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 DQ31 A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A9 A8 A7 DQ0 w Easy memory expansion 68-pin JLCC TOP VIEW J 1 HANBit Electronics Co., Ltd. HANBit HMF51232J4 FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 - A18 32 19 A0-18 /WE DQ 0-7 U1 /OE /CE /CE1 A0-18 /WE DQ 8-15 U2 /OE /CE /CE2 A0-18 /WE DQ16-23 U3 /OE /CE /CE3 A0-18 /WE /WE /OE /OE DQ24-31 U4 /CE /CE4 TRUTH TABLE MODE /CE /OE /WE DQ ADDRESSES READ L L H DOUT AIN WRITE L H L DIN AIN CMOS STANDBY Vcc±0.5V X X HIGH-Z X TTL STANDBY H X X HIGH-Z X OUTPUT DISABLE L H H HIGH-Z X Note : X means don't care URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF51232J4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure t o absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) TEST CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 12 mA /CE = VIL, /OE=VIH ICC2 40 mA /CE= VIH ICC3 1.0 mA 4.2 V 2.4 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is i n progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF51232J4 Excludes system-level Byte Programming Time - 7 300 us overhead Excludes system-level Chip Programming Time - 3.6 10.8 sec overhead CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN TEST SETUP TYP. MAX UNIT VIN = 0 4 6 pF VOUT = 0 8 12 pF VIN = 0 8 12 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD tAVAV tRC tAVQV tACC DESCRIPTION TEST SETUP Read Cycle Time -55 -90 UNIT Min 55 90 ns Max 55 90 ns Max 55 90 ns /CE = V IL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 30 35 ns tEHQZ tDF Chip Enable to Output High-Z Max 18 20 ns tGHQZ tDF Output Enable to Output High-Z Max 18 20 ns tAXQX tQH Min 0 0 ns Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Notes : Test Conditions : Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns , In case of 55ns-5ns Input pulse levels : 0.45V to 2.4V, In case of 55ns- 0.0V-3.0V Timing measurement reference level Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF51232J4 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION -55 -90 UNIT JEDEC STANDARD tAVAV tWC Write Cycle Time Min 55 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 25 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 30 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Vcc set up time Min 50 50 µs tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF51232J4 u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION -55 -90 UNIT Min 55 90 ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 40 45 ns tDVEH tDS Data Setup Time Min 25 45 ns tEHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 0 ns tWLEL tWS /WE Setup Time Min 0 0 ns tEHWH tWH /WE Hold Time Min 0 0 ns tELEH tCP /CE Pulse Width Min 30 45 ns tEHEL tCPH /CE Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note) Typ 1 1 sec JEDEC STANDARD tAVAV tWC Write Cycle Time tAVEL tAS tELAX Notes : This does not include the preprogramming time. URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF51232J4 u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF51232J4 u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF51232J4 u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF51232J4 u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF51232J4 PACKAGE DIMENSIONS 4.30±0.20mm 24.94±0.20mm 0.46±0.20mm 23.67±0.20mm 1.278±0.20mm ORDERING INFORMATION Part Number Density Org. Package HMF51232J4-55 2MByte 512k×32bit 68Pin-JLCC HMF51232J4-70 2MByte 512k×32bit HMF51232J4-90 2MByte HMF51232J4-120 2MByte URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 5.0V 55ns 68 Pin-JLCC 4EA 5.0V 70ns 512k×32bit 68 Pin-JLCC 4EA 5.0V 90ns 512k×32bit 68 Pin-JLCC 4EA 5.0V 120ns 11 Number HANBit Electronics Co., Ltd.