CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTD010P03J3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDS(ON)@VGS=-10V, ID=-20A RDS(ON)@VGS=-5V, ID=-15A -30V -43A -9.3A 11.3mΩ(typ) 16.7mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline MTD010P03J3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Ordering Information Device Package TO-252 MTD010P03J3-0-T3-G (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD010P03J3 CYStek Product Specification Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=-10V Continuous Drain Current @TC=100°C, VGS=-10V Continuous Drain Current @TA=25°C, VGS=-10V Continuous Drain Current @TA=70°C, VGS=-10V Pulsed Drain Current @ VGS=-10V Avalanche Current @L=100μH Single Pulse Avalanche Energy @ L=1mH, ID=-20 Amps, VDD=-25V TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature (Note 1) (Note 1) (Note 4) (Note 4) (Note 3) (Note 5) (Note 5) (Note 1) (Note 1) (Note 2) (Note 2) Symbol Limits VDS VGS IDM IAS -30 ±20 -43 -30.4 -9.3 -7.4 -172 -43 EAS 200 ID IDSM PD PDSM Tj, Tstg 54 27 2.5 1.6 -55~+175 Unit V A mJ W °C/W Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.8 Thermal Resistance, Junction-to-ambient, max (Note2) 50 °C/W RθJA Thermal Resistance, Junction-to-ambient, max (Note4) 110 Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. 100% tested by condition of VDD=-15V, ID=-30A, L=0.1mH, VGS=-10V. MTD010P03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit -30 -1.7 - -14 14.8 11.3 16.7 -2.8 ±100 -1 -5 15 23 V mV/°C V S nA 45 8.6 8.5 13.6 20 76.6 17.4 2436 233 158 9.1 54 3166 - -0.73 15.5 8.1 -43 -172 -1 20 - Dynamic *Qg 36 *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ Test Conditions VGS=0V, ID=-250μA Reference to 25°C, ID=2-50μA VDS = VGS, ID=-250μA VDS =-10V, ID=-10A VGS=±20V, VDS=0V VDS =-30V, VGS =0V VDS =-30V, VGS =0V, Tj=55°C VGS =-10V, ID=-20A VGS =-5V, ID=-15A nC VDS=-15V, VGS=-10V, ID=-12A ns VDD=-15V, ID=-12A, VGS=-10V, RG=1Ω pF VGS=0V, VDS=-15V, f=1MHz Ω f=1MHz A V ns nC IS=-1A, VGS=0V VGS=0V, IF=-1A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTD010P03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 150 120 -6V -BVDSS, Normalized Drain-Source Breakdown Voltage -I D, Drain Current (A) -10V -5V -5.5V 90 -4.5V 60 -4V -3.5V 30 VGS=-3V 1 1.0 0.8 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 1.2 -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=0V From top to bottom : VGS=-4.5V, -6V, -7V, -10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance ID=-20A 40 35 30 25 20 15 10 5 0 0 MTD010P03J3 2 4 6 8 -VGS, Gate-Source Voltage(V) 4 6 -IS , Source Drain Current(A) 8 10 2.4 50 45 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source On-State Resistance(mΩ) ID=-250μA, VGS=0V 0.6 0.4 0 0 1.2 10 2.0 VGS=-10V, ID=-20A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 11mΩ typ. 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 5/ 9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VGS(th) , Threshold Voltage(V) Capacitance---(pF) 10000 Ciss 1000 C oss Crss ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 100 0 1.2 5 10 15 20 -VDS, Drain-Source Voltage(V) -75 -50 -25 25 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=-10V VDS=-15V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 100 10 VDS=-15V 1 0.1 Pulsed TA=25°C 0.01 0.001 8 6 VDS=-24V 4 2 ID=-12A 0 0.01 0.1 -ID, Drain Current(A) 1 10 0 6 12 18 24 30 36 42 48 Qg, Total Gate Charge(nC) 54 60 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 50 1000 -I D, Maximum Drain Current(A) 45 RDS(ON) Limited -I D, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 10μs 100 100μs 1ms 10 10ms 1 TC=25°C, Tj=175°C, VGS=-10V RθJC=2.8°C/W, Single Pulse 100ms DC 40 35 30 25 20 15 Tj=175°C, VGS=-10V RθJC=2.8°C/W 10 5 0 0.1 0.1 MTD010P03J3 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Typical Transfer Characteristics 150 500 450 VDS=-10V 120 -I D, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) TJ(MAX) =175°C TC=25°C RθJC=2.8°C/W 400 Power (W) 350 90 60 300 250 200 150 30 100 50 0 0 1 2 3 4 5 6 7 8 -VGS, Gate-Source Voltage(V) 9 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.8 ° C/W 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 1.E-04 MTD010P03J3 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTD010P03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD010P03J3 CYStek Product Specification Spec. No. : C391J3 Issued Date : 2017.07.10 Revised Date : Page No. : 9/ 9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 D010 P03 Device Name Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD010P03J3 CYStek Product Specification