Yea Shin MB10S Mini surface mount glass passivated single-phase bridge rectifier Datasheet

DATA SHEET
MB1S THRU MB10S
SEMICONDUCTOR
MINI SURFACE MOUNT GLASS
PASSIVATED SINGLE-PHASE
DI
MDI Unit:inch(mm)
BRIDGE RECTIFIER
VOLTAGE 100 to 1000Volts 0.8 Amperes CURRENT
+
FEATURES
.157(4.0)
.142(3.6)
•Plastic material used carries Underwriters
~
Laboratory recognition 94V-O
•Low leakage
~
.031(0.8)
.019(0.5)
•Surge overload rating-- 30 amperes peak
•Ideal for printed circuit board
.193(4.9)
.177(4.5)
•Exceeds environmental standards of MIL-S-19500
•High temperature soldering : 260OC / 10 seconds at terminals
.106(2.7)
.090(2.3)
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.106(2.7)
.090(2.3)
MECHANICAL DATA
•Case: Reliable low cost construction utilizing molded plastic technique results in
inexpensive product
•Terminals: Lead solderable per MIL-STD-202, Method 208.
.008(0.2)
•Polarity: Polarity symbols molded or marking on body.
.275(7.0)
MAX
•Mounting Position: Any.
•Weight: 0.008 ounce, 0.22 gram.
.043(1.1)
.027(0.7)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at TA = 40℃ TA=25℃
SYMBOLS
MB1S
VRRM
100
200
400
VRMS
70
140
280
VDC
100
200
400
600
MB2S
MB4S
MB6S
MB8S
MB10S
600
800
1000
V
420
560
700
V
800
1000
V
UNIT
IAV
0.8
A
IFSM
35
A
I2t Rating for fusing (t<8.35ms)
I2t
3.735
A2s
Maximum Forward Voltage Drop per Bridge Element at 0.8A
VF
1.0
V
(Note 3)
Peak Forward Surge Current:8.3ms single half sine - wave
superimposed on rated load (JEDEC method )
Maximum DC Reverse Current TJ = 25℃
at Rate DC Blocking Voltage TJ =125℃
Typical Junction capacitance (Note 1)
Typical thermal resistance (Note2)
Operating Temperature Range
5.0
IR
μA
500
CJ
25
RθJA
85
RθJL
20
TJ, TSTG
-55 to +150
pF
℃/W
℃
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads
3. * R-load on alumina subtrate Ta=25℃
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REV.02 20120305
DEVICE CHARACTERISTICS
MB1S THRU MB10S
Forward Current Derating Curve
Forward Characteristics
10
FORWARD CURRENT (A)
FORWARD CURRENT (A)
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE ( º C)
1
0.1
0.01
0.4
175
0.8
1
1.2
FORWARD VOLTAGE (V)
1.4
10
30
25
20
15
10
5
0
0.6
Reverse Characteristics
35
REVERSE CURRENT ( µ A)
PEAK FORWARD SURGE CURRENT (A)
Non-Repetitive Surge Current
TA = 25º C
Pulse Width = 300µs
2% Duty Cycle
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
T C = 100 º C
1
0.1
TA = 25 º C
0.01
100
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
PAD LAYOUT
X
Z
Dimensions
Z
X
Y
C
MDI(mm)
7.5
1.2
1.6
2.7
Y
C
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REV.02 20120305
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