DATA SHEET MB1S THRU MB10S SEMICONDUCTOR MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE DI MDI Unit:inch(mm) BRIDGE RECTIFIER VOLTAGE 100 to 1000Volts 0.8 Amperes CURRENT + FEATURES .157(4.0) .142(3.6) •Plastic material used carries Underwriters ~ Laboratory recognition 94V-O •Low leakage ~ .031(0.8) .019(0.5) •Surge overload rating-- 30 amperes peak •Ideal for printed circuit board .193(4.9) .177(4.5) •Exceeds environmental standards of MIL-S-19500 •High temperature soldering : 260OC / 10 seconds at terminals .106(2.7) .090(2.3) •Pb free product at available : 99% Sn above meet RoHS environment substance directive request .106(2.7) .090(2.3) MECHANICAL DATA •Case: Reliable low cost construction utilizing molded plastic technique results in inexpensive product •Terminals: Lead solderable per MIL-STD-202, Method 208. .008(0.2) •Polarity: Polarity symbols molded or marking on body. .275(7.0) MAX •Mounting Position: Any. •Weight: 0.008 ounce, 0.22 gram. .043(1.1) .027(0.7) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load. For capacitive load, derate current by 20% Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 40℃ TA=25℃ SYMBOLS MB1S VRRM 100 200 400 VRMS 70 140 280 VDC 100 200 400 600 MB2S MB4S MB6S MB8S MB10S 600 800 1000 V 420 560 700 V 800 1000 V UNIT IAV 0.8 A IFSM 35 A I2t Rating for fusing (t<8.35ms) I2t 3.735 A2s Maximum Forward Voltage Drop per Bridge Element at 0.8A VF 1.0 V (Note 3) Peak Forward Surge Current:8.3ms single half sine - wave superimposed on rated load (JEDEC method ) Maximum DC Reverse Current TJ = 25℃ at Rate DC Blocking Voltage TJ =125℃ Typical Junction capacitance (Note 1) Typical thermal resistance (Note2) Operating Temperature Range 5.0 IR μA 500 CJ 25 RθJA 85 RθJL 20 TJ, TSTG -55 to +150 pF ℃/W ℃ NOTES: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts 2. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 X 0.5"(13 X 13mm) copper pads 3. * R-load on alumina subtrate Ta=25℃ http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS MB1S THRU MB10S Forward Current Derating Curve Forward Characteristics 10 FORWARD CURRENT (A) FORWARD CURRENT (A) 1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( º C) 1 0.1 0.01 0.4 175 0.8 1 1.2 FORWARD VOLTAGE (V) 1.4 10 30 25 20 15 10 5 0 0.6 Reverse Characteristics 35 REVERSE CURRENT ( µ A) PEAK FORWARD SURGE CURRENT (A) Non-Repetitive Surge Current TA = 25º C Pulse Width = 300µs 2% Duty Cycle 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz T C = 100 º C 1 0.1 TA = 25 º C 0.01 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PAD LAYOUT X Z Dimensions Z X Y C MDI(mm) 7.5 1.2 1.6 2.7 Y C http://www.yeashin.com 2 REV.02 20120305