NTE152 (NPN) & NTE153 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220 type package designed for general purpose medium power switching and amplifier applications. Features: D Good Linearity of hFE Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (hFE) matched to within 10% of each other. Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Breakdown Voltage Symbol Test Conditions V(BR)CEO IC = 50mA, IB = 0 Min Typ Max Unit 90 – – V Collector Cutoff Current ICBO VCB = 90V, IE = 0 – – 20 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 10 µA DC Current Gain hFE1 VCE = 5V, IC = 0.5A 40 – 200 hFE2 VCE = 5V, IC = 3A 15 – – VCE(sat) IC = 3A, IB = 0.3A – – 1.5 V Base–Emitter Voltage VBE VCE = 5V, IC = 3A – – 1.5 V Transition Frequency fT VCE = 5V, IC = 0.5A 3 8 – MHz VCB = 10V, IE = 0, f = 1MHz – 85 – pF Collector–Emitter Saturation Voltage Collector Output Capacitance Cob .420 (10.67) Max .110 (2.79) .500 (12.7) Max .147 (3.75) Dia Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab