InGaAs PIN photodiodes G12180 series Photosensitive area from φ0.3 mm to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from φ0.3 mm to φ5 mm. Features Applications Low noise, low dark current Laser monitors Low terminal capacitance Optical power meters Large photosensitive area Laser diode life test Various photosensitive area sizes available NIR (near infrared) photometry Optical communications Specifications/Absolute maximum ratings Type no. Dimensional outline/ Window material*1 Package Cooling Photosensitive area Reverse voltage VR max (V) (mm) G12180-003A φ0.3 G12180-005A (1)/K TO-18 φ0.5 G12180-010A φ1 Non-cooled G12180-020A φ2 (2)/K TO-5 G12180-030A φ3 G12180-050A (3)/K TO-8 φ5 *1: K: borosilicate glass with anti-reflective coating (optimized for 1.55 μm peak) Note: Exceeding the absolute maximum ratings even momentarily may cause a product within the absolute maximum ratings. Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) Soldering conditions 20 10 -40 to +100 -55 to +125 5 260 °C or less, within 10 s 2 drop in product quality. Always be sure to use the Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S Dark current ID VR=5 V 1.3 μm λ=λp Min. Typ. Min. Typ. Typ. Max. (μm) (μm) (A/W) (A/W) (A/W) (A/W) (nA) (nA) 0.1 0.5 0.15 0.75 0.8 4 0.9 to 1.7 1.55 0.8 0.9 0.9 1.1 1.5*2 7.5*2 2.5*2 12.5*2 5*2 25*2 G12180-003A G12180-005A G12180-010A G12180-020A G12180-030A G12180-050A *2: VR=1 V *3: VR=1 V, f=1 MHz Cutoff Terminal Shunt Temper- frequency Detectivity capacitance resistance fc ature Ct D* Rsh coefficient VR=5 V VR=5 V λ=λp VR=10 mV of dark RL=50 Ω f=1 MHz current -3 dB ΔTID Min. Typ. Typ. Max. Min. Typ. Min. Typ. (MHz) (MHz) (pF) (pF) (MΩ) (MΩ) (cm·Hz1/2/W) (cm·Hz1/2/W) 450 600 5 7.5 200 1000 160 200 15 20 80 400 25 60 55 120 25 125 2.4 × 1012 6.3 × 1012 1.09 4*3 13*3 250*3 800*3 6.5 30 2.5*3 7*3 450*3 1500*3 4 20 0.5*3 3*3 1000*3 7000*3 1.3 6.5 www.hamamatsu.com Noize equivalent power NEP λ=λp Typ. (W/Hz1/2) 4.2 × 10-15 7 × 10-15 1.4 × 10-14 2.8 × 10-14 4.4 × 10-14 7 × 10-14 Max. (W/Hz1/2) 1.2 × 10-14 1.9 × 10-14 3.8 × 10-14 7.5 × 10-14 1.1 × 10-13 1.9 × 10-13 1 InGaAs PIN photodiodes G12180 series Spectral transmittance characteristics of window material Spectral response (Typ. Ta=25 °C) 1.2 (Typ. Ta=25 °C) 100 0.8 Transmittance (%) Photosensitivity (A/W) 1.0 0.6 0.4 95 90 0.2 0 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 85 0.9 1.0 1.1 Wavelength (µm) 1.2 1.3 1.4 1.5 1.6 Wavelength (µm) KIRDB0374EA KIRDB0545EA Linearity (Typ. Ta=25 °C) (Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V) 102 100 Relative sensitivity (%) Temperature coefficient of sensitivity (%/°C) Photosensitivity temperature characteristics 2 1.7 1 0 G12180-010A 98 G12180-020A 96 G12180-030A 94 G12180-050A 92 -1 0.8 90 1.0 1.2 1.4 1.6 1.8 0 2 4 6 8 10 12 14 16 Incident light level (mW) Wavelength (µm) KIRDB0541EA KIRDB0042EA 2 InGaAs PIN photodiodes G12180 series Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 100 nA (Typ. Ta=25 °C, f=1 MHz) 10 nF G12180-050A G12180-030A G12180-050A Terminal capacitance 10 nA Dark current G12180-020A 1 nA G12180-005A G12180-010A 100 pA G12180-030A 1 nF G12180-020A G12180-010A 100 pF G12180-005A 10 pF G12180-003A 10 pA 0.01 0.1 1 G12180-003A 10 100 Reverse voltage (V) 1 pF 0.01 0.1 1 10 Reverse voltage (V) KIRDB0543EA KIRDB0542EA Shunt resistance vs. element temperature Dimensional outlines (unit: mm) (Typ. VR=10 mV) 100 GΩ (1) G12180-003A/-005A/-010A 5.4 ± 0.2 G12180-003A 10 GΩ 100 100 MΩ 2.6 ± 0.2 G12180-005A G12180-010A 10 MΩ G12180-020A Photosensitive surface 1 MΩ G12180-030A 100 kΩ 10 kΩ 13 min. Shunt resistance 1 GΩ 3.7 ± 0.2 4.7 ± 0.1 Window 2.2 min. 0.45 Lead G12180-050A 2.5 ± 0.2 1 kΩ -40 -20 0 20 40 60 80 100 Element temperature (°C) KIRDB0544EA Case KIRDA0150EC 3 InGaAs PIN photodiodes 12.4 ± 0.1 0.45 Lead 0.5 Photosensitive surface 2.8 ± 0.2 Window 7.0 min. 18 min. Photosensitive surface 0.4 max. Window 4.5 min. 4.9 ± 0.2 13.8 ± 0.2 8.3 ± 0.1 2.5 ± 0.2 9.2 ± 0.2 0.45 Lead 4.9 ± 0.2 (3) G12180-050A 14 min. (2) G12180-020A/-030A G12180 series 7.5 ± 0.2 5.1 ± 0.3 Index mark 1.0 1.5 max. Case Case KIRDA0052EC KIRDA0155EB Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, Plastic products/Precautions Technical information ∙ infrared detector/technical information Information described in this material is current as of January, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1121E02 Jan. 2014 DN 4