NTE2953 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Control D Solenoid Control D DC–DC Converter Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A Avalanche Drain Current (Pulsed, L = 100µH), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Source Current, IS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57°C/W Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Electrical Characteristics: (Tch = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Symbol Test Conditions V(BR)DSS VDS = 0V, ID = 1mA Min Typ Max Unit 60 – – V Gate–Source Leakage IGSS VGS = ±20V, VDS = 0V – – ±0.1 µA Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0 – – 0.1 mA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 3.0 4.0 V Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 35A – 5.7 7.5 mΩ Drain–Source On–State Voltage VDS(on) VGS = 10V, ID = 35A – |yfs| VGS = 10V, ID = 35A 50 Forward Transfer Admittance 0.200 0.263 70 – V S Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified) Parameter Symbol Test Conditions Typ Max Unit – 6540 – pF Input Capacitance Ciss Output Capacitance Coss – 1640 – pF Reverse Transfer Capacitance Crss – 790 – pF Turn–On Delay Time td(on) – 95 – ns – 195 – ns td(off) – 290 – ns tf – 210 – ns IS = 35A, VGS = 0V – 1.0 1.5 V IS = 70A, dIF/dt = 100A/µs – 85 – ns Rise Time tr Turn–Off Delay Time Fall Time Diode Forward Voltage VSD Reverse Recovery Time trr VGS = 0V, VDS = 10V, f = 1MHz Min VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω Ω .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) Max .114 (2.9) Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)