ATMEL AT45DB321D-MU-SL954 32-megabit 2.7-volt dataflash Datasheet

Features
• Single 2.7V - 3.6V Supply
• RapidS Serial Interface: 66 MHz Maximum Clock Frequency
– SPI Compatible Modes 0 and 3
• User Configurable Page Size
•
•
•
•
•
•
•
•
•
•
•
•
•
– 512 Bytes per Page
– 528 Bytes per Page
– Page Size Can Be Factory Pre-configured for 512 Bytes
Page Program Operation
– Intelligent Programming Operation
– 8,192 Pages (512/528 Bytes/Page) Main Memory
Flexible Erase Options
– Page Erase (512 Bytes)
– Block Erase (4 Kbytes)
– Sector Erase (64 Kbytes)
– Chip Erase (32 Mbits)
Two SRAM Data Buffers (512/528 Bytes)
– Allows Receiving of Data while Reprogramming the Flash Array
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low-power Dissipation
– 7 mA Active Read Current Typical
– 25 µA Standby Current Typical
– 15 µA Deep Power Down Typical
Hardware and Software Data Protection Features
– Individual Sector
Sector Lockdown for Secure Code and Data Storage
– Individual Sector
Security: 128-byte Security Register
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
32-megabit
2.7-volt
DataFlash®
AT45DB321D
1. Description
The AT45DB321D is a 2.7-volt, serial-interface sequential access Flash memory
ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB321D supports RapidS serial interface for applications
requiring very high speed operations. RapidS serial interface is SPI compatible for
frequencies up to 66 MHz. Its 34,603,008 bits of memory are organized as 8,192
pages of 512 bytes or 528 bytes each. In addition to the main memory, the
AT45DB321D also contains two SRAM buffers of 512/528 bytes each. The buffers
allow the receiving of data while a page in the main Memory is being reprogrammed,
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation.
Unlike conventional Flash memories that are accessed randomly with multiple
address lines and a parallel interface, the DataFlash uses a RapidS serial interface to
3597N–DFLASH–04/09
sequentially access its data. The simple sequential access dramatically reduces active pin
count, facilitates hardware layout, increases system reliability, minimizes switching noise, and
reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential.
To allow for simple in-system reprogrammability, the AT45DB321D does not require high input
voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for
both the program and read operations. The AT45DB321D is enabled through the chip select pin
(CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output
(SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
2. Pin Configurations and Pinouts
MLF(1) (VDFN) Top View
Figure 2-1.
SI
SCK
RESET
CS
Note:
1
8
2
7
3
6
4
5
Figure 2-2.
SO
GND
VCC
WP
SI
SCK
RESET
CS
1
2
3
4
8
7
6
5
SO
GND
VCC
WP
1. The metal pad on the bottom of the MLF
package is floating. This pad can be a “No
Connect” or connected to GND.
Figure 2-3.
BGA Package Ball-Out (Top View)
1
A
B
2
3
4
NC
NC
NC
NC
NC
SCK
GND
VCC
NC
NC
CS
RDY/BSY
WP
NC
NC
SO
SI
RESET
NC
NC
NC
NC
NC
NC
D
E
Figure 2-4.
TSOP Top View: Type 1
5
C
RDY/BUSY
RESET
WP
NC
NC
VCC
GND
NC
NC
NC
CS
SCK
SI
SO
Note:
2
SOIC Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
TSOP package is not recommended for new designs. Future die
shrinks will support 8-pin packages only.
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
Table 2-1.
Pin Configurations
Symbol
Name and Function
Asserted
State
Type
CS
Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device
will be deselected and normally be placed in the standby mode (not Deep Power-Down mode),
and the output pin (SO) will be in a high-impedance state. When the device is deselected, data
will not be accepted on the input pin (SI).
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation such as
a program or erase cycle, the device will not enter the standby mode until the completion of the
operation.
Low
Input
SCK
Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is always
latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the
falling edge of SCK.
–
Input
SI
Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK.
–
Input
SO
Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is always
clocked out on the falling edge of SCK.
–
Output
WP
Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector
Protection Register will be protected against program and erase operations regardless of
whether the Enable Sector Protection command has been issued or not. The WP pin functions
independently of the software controlled protection method. After the WP pin goes low, the
content of the Sector Protection Register cannot be modified.
If a program or erase command is issued to the device while the WP pin is asserted, the device
will simply ignore the command and perform no operation. The device will return to the idle state
once the CS pin has been deasserted. The Enable Sector Protection command and Sector
Lockdown command, however, will be recognized by the device when the WP pin is asserted.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection will
not be used. However, it is recommended that the WP pin also be externally connected to VCC
whenever possible.
Low
Input
RESET
Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset
the internal state machine to an idle state. The device will remain in the reset condition as long as
a low level is present on the RESET pin. Normal operation can resume once the RESET pin is
brought back to a high level.
The device incorporates an internal power-on reset circuit, so there are no restrictions on the
RESET pin during power-on sequences. If this pin and feature are not utilized it is recommended
that the RESET pin be driven high externally.
Low
Input
RDY/BUSY
Ready/Busy: This open drain output pin will be driven low when the device is busy in an
internally self-timed operation. This pin, which is normally in a high state (through an external
pull-up resistor), will be pulled low during programming/erase operations, compare operations,
and page-to-buffer transfers.
The busy status indicates that the Flash memory array and one of the buffers cannot be
accessed; read and write operations to the other buffer can still be performed.
–
Output
VCC
Device Power Supply: The VCC pin is used to supply the source voltage to the device.
Operations at invalid VCC voltages may produce spurious results and should not be attempted.
–
Power
GND
Ground: The ground reference for the power supply. GND should be connected to the system
ground.
–
Ground
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3597N–DFLASH–04/09
3. Block Diagram
FLASH MEMORY ARRAY
WP
PAGE (512/528 BYTES)
BUFFER 1 (512/528 BYTES)
SCK
CS
RESET
VCC
GND
RDY/BUSY
BUFFER 2 (512/528 BYTES)
I/O INTERFACE
SI
SO
4. Memory Array
To provide optimal flexibility, the memory array of the AT45DB321D is divided into three levels of granularity comprising of
sectors, blocks, and pages. The “Memory Architecture Diagram” illustrates the breakdown of each level and details the
number of pages per sector and block. All program operations to the DataFlash occur on a page by page basis. The erase
operations can be performed at the chip, sector, block or page level.
Memory Architecture Diagram
SECTOR 0b = 120 Pages
61,440/63,360 bytes
SECTOR 0a
BLOCK 0
BLOCK 1
SECTOR 0b
SECTOR 0a = 8 Pages
4,096/4,224 bytes
BLOCK ARCHITECTURE
SECTOR 1 = 128 Pages
65,536/67,584 bytes
BLOCK 2
SECTOR 1
PAGE 1
PAGE 6
PAGE 7
PAGE 8
BLOCK 63
BLOCK 65
PAGE 9
PAGE 14
PAGE 15
BLOCK 126
PAGE 16
BLOCK 127
PAGE 17
BLOCK 128
PAGE 18
SECTOR 62 = 128 Pages
65,536/67,584 bytes
BLOCK 129
SECTOR 63 = 128 Pages
65,536/67,586 bytes
BLOCK 1,022
BLOCK 1,023
Block = 4,096/4,224 bytes
4
PAGE 0
BLOCK 62
BLOCK 64
SECTOR 2 = 128 Pages
65,536/67,584 bytes
PAGE ARCHITECTURE
8 Pages
BLOCK 0
SECTOR ARCHITECTURE
BLOCK 1
Figure 4-1.
PAGE 8,190
PAGE 8,191
Page = 512/528 bytes
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
5. Device Operation
The device operation is controlled by instructions from the host processor. The list of instructions
and their associated opcodes are contained in Table 15-1 on page 28 through Table 15-7 on
page 31. A valid instruction starts with the falling edge of CS followed by the appropriate 8-bit
opcode and the desired buffer or main memory address location. While the CS pin is low, toggling the SCK pin controls the loading of the opcode and the desired buffer or main memory
address location through the SI (serial input) pin. All instructions, addresses, and data are transferred with the most significant bit (MSB) first.
Buffer addressing for the DataFlash standard page size (528 bytes) is referenced in the
datasheet using the terminology BFA9 - BFA0 to denote the 10 address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the
terminology PA12 - PA0 and BA9 - BA0, where PA12 - PA0 denotes the 13 address bits
required to designate a page address and BA9 - BA0 denotes the 10 address bits required to
designate a byte address within the page.
For “Power of 2” binary page size (512 bytes) the Buffer addressing is referenced in the
datasheet using the conventional terminology BFA8 - BFA0 to denote the 9 address bits
required to designate a byte address within a buffer. Main memory addressing is referenced
using the terminology A21 - A0, where A21 - A9 denotes the 13 address bits required to designate a page address and A8 - A0 denotes the 9 address bits required to designate a byte
address within a page.
6. Read Commands
By specifying the appropriate opcode, data can be read from the main memory or from either
one of the two SRAM data buffers. The DataFlash supports RapidS protocols for Mode 0 and
Mode 3. Please refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for
details on the clock cycle sequences for each mode.
6.1
Continuous Array Read (Legacy Command: E8H): Up to 66 MHz
By supplying an initial starting address for the main memory array, the Continuous Array Read
command can be utilized to sequentially read a continuous stream of data from the device by
simply providing a clock signal; no additional addressing information or control signals need to
be provided. The DataFlash incorporates an internal address counter that will automatically
increment on every clock cycle, allowing one continuous read operation without the need of
additional address sequences. To perform a continuous read from the DataFlash standard page
size (528 bytes), an opcode of E8H must be clocked into the device followed by three address
bytes (which comprise the 24-bit page and byte address sequence) and 4 don’t care bytes. The
first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the
starting byte address within the page. To perform a continuous read from the binary page size
(512 bytes), the opcode (E8H) must be clocked into the device followed by three address bytes
and 4 don’t care bytes. The first 13 bits (A21 - A9) of the 22-bits sequence specify which page of
the main memory array to read, and the last 9 bits (A8 - A0) of the 22-bits address sequence
specify the starting byte address within the page. The don’t care bytes that follow the address
bytes are needed to initialize the read operation. Following the don’t care bytes, additional clock
pulses on the SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care
bytes, and the reading of data. When the end of a page in main memory is reached during a
5
3597N–DFLASH–04/09
Continuous Array Read, the device will continue reading at the beginning of the next page with
no delays incurred during the page boundary crossover (the crossover from the end of one page
to the beginning of the next page). When the last bit in the main memory array has been read,
the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the
array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output
pin (SO). The maximum SCK frequency allowable for the Continuous Array Read is defined by
the fCAR1 specification. The Continuous Array Read bypasses both data buffers and leaves the
contents of the buffers unchanged.
6.2
Continuous Array Read (High Frequency Mode: 0BH): Up to 66 MHz
This command can be used with the serial interface to read the main memory array sequentially
in high speed mode for any clock frequency up to the maximum specified by fCAR1. To perform a
continuous read array with the page size set to 528 bytes, the CS must first be asserted then an
opcode 0BH must be clocked into the device followed by three address bytes and a dummy
byte. The first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the
main memory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence
specify the starting byte address within the page. To perform a continuous read with the page
size set to 512 bytes, the opcode, 0BH, must be clocked into the device followed by three
address bytes (A21 - A0) and a dummy byte. Following the dummy byte, additional clock pulses
on the SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end of a page in the main memory is reached during a Continuous Array
Read, the device will continue reading at the beginning of the next page with no delays incurred
during the page boundary crossover (the crossover from the end of one page to the beginning of
the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays will be incurred when wrapping around from the end of the array to the
beginning of the array. A low-to-high transition on the CS pin will terminate the read operation
and tri-state the output pin (SO). The maximum SCK frequency allowable for the Continuous
Array Read is defined by the fCAR1 specification. The Continuous Array Read bypasses both
data buffers and leaves the contents of the buffers unchanged.
6.3
Continuous Array Read (Low Frequency Mode: 03H): Up to 33 MHz
This command can be used with the serial interface to read the main memory array sequentially
without a dummy byte up to maximum frequencies specified by fCAR2. To perform a continuous
read array with the page size set to 528 bytes, the CS must first be asserted then an opcode,
03H, must be clocked into the device followed by three address bytes (which comprise the 24-bit
page and byte address sequence). The first 13 bits (PA12 - PA0) of the 23-bit address sequence
specify which page of the main memory array to read, and the last 10 bits (BA9 - BA0) of the
23-bit address sequence specify the starting byte address within the page. To perform a continuous read with the page size set to 512 bytes, the opcode, 03H, must be clocked into the device
followed by three address bytes (A21 - A0). Following the address bytes, additional clock pulses
on the SCK pin will result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end of a page in the main memory is reached during a Continuous Array
Read, the device will continue reading at the beginning of the next page with no delays incurred
6
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
during the page boundary crossover (the crossover from the end of one page to the beginning of
the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays will be incurred when wrapping around from the end of the array to the
beginning of the array. A low-to-high transition on the CS pin will terminate the read operation
and tri-state the output pin (SO). The Continuous Array Read bypasses both data buffers and
leaves the contents of the buffers unchanged.
6.4
Main Memory Page Read
A main memory page read allows the user to read data directly from any one of the 8,192 pages
in the main memory, bypassing both of the data buffers and leaving the contents of the buffers
unchanged. To start a page read from the DataFlash standard page size (528 bytes), an opcode
of D2H must be clocked into the device followed by three address bytes (which comprise the
24-bit page and byte address sequence) and 4 don’t care bytes. The first 13 bits (PA12 - PA0) of
the 23-bit address sequence specify the page in main memory to be read, and the last 10 bits
(BA9 - BA0) of the 23-bit address sequence specify the starting byte address within that page.
To start a page read from the binary page size (512 bytes), the opcode D2H must be
clocked into the device followed by three address bytes and 4 don’t care bytes. The first 13 bits
(A21 - A9) of the 22-bits sequence specify which page of the main memory array to read, and
the last 9 bits (A8 - A0) of the 22-bits address sequence specify the starting byte address within
the page. The don’t care bytes that follow the address bytes are sent to initialize the read operation. Following the don’t care bytes, additional pulses on SCK result in data being output on the
SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the
address bytes, the don’t care bytes, and the reading of data. When the end of a page in
main memory is reached, the device will continue reading back at the beginning of the same
page. A low-to-high transition on the CS pin will terminate the read operation and tri-state the
output pin (SO). The maximum SCK frequency allowable for the Main Memory Page Read is
defined by the fSCK specification. The Main Memory Page Read bypasses both data buffers and
leaves the contents of the buffers unchanged.
6.5
Buffer Read
The SRAM data buffers can be accessed independently from the main memory array, and utilizing the Buffer Read Command allows data to be sequentially read directly from the buffers. Four
opcodes, D4H or D1H for buffer 1 and D6H or D3H for buffer 2 can be used for the Buffer Read
Command. The use of each opcode depends on the maximum SCK frequency that will be used
to read data from the buffer. The D4H and D6H opcode can be used at any SCK frequency up to
the maximum specified by fCAR1. The D1H and D3H opcode can be used for lower frequency
read operations up to the maximum specified by fCAR2.
To perform a buffer read from the DataFlash standard buffer (528 bytes), the opcode must be
clocked into the device followed by three address bytes comprised of 14 don’t care bits and
10 buffer address bits (BFA9 - BFA0). To perform a buffer read from the binary buffer
(512 bytes), the opcode must be clocked into the device followed by three address bytes comprised of 15 don’t care bits and 9 buffer address bits (BFA8 - BFA0). Following the address
bytes, one don’t care byte must be clocked in to initialize the read operation. The CS pin must
remain low during the loading of the opcode, the address bytes, the don’t care byte, and the
reading of data. When the end of a buffer is reached, the device will continue reading back at the
beginning of the buffer. A low-to-high transition on the CS pin will terminate the read operation
and tri-state the output pin (SO).
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3597N–DFLASH–04/09
7. Program and Erase Commands
7.1
Buffer Write
Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the
DataFlash standard buffer (528 bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2,
must be clocked into the device, followed by three address bytes comprised of 14 don’t care bits
and 10 buffer address bits (BFA9 - BFA0). The 10 buffer address bits specify the first byte in the
buffer to be written. To load data into the binary buffers (512 bytes each), a 1-byte opcode 84H
for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by three address bytes
comprised of 15 don’t care bits and 9 buffer address bits (BFA8 - BFA0). The 9 buffer address
bits specify the first byte in the buffer to be written. After the last address byte has been clocked
into the device, data can then be clocked in on subsequent clock cycles. If the end of the data
buffer is reached, the device will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-high transition is detected on the CS pin.
7.2
Buffer to Main Memory Page Program with Built-in Erase
Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte
opcode, 83H for buffer 1 or 86H for buffer 2, must be clocked into the device. For the DataFlash
standard page size (528 bytes), the opcode must be followed by three address bytes consist of
1 don’t care bit, 13 page address bits (PA12 - PA0) that specify the page in the main memory to
be written and 10 don’t care bits. To perform a buffer to main memory page program with built-in
erase for the binary page size (512 bytes), the opcode 83H for buffer 1 or 86H for buffer 2, must
be clocked into the device followed by three address bytes consisting of 2 don’t care bits
13-page address bits (A21 - A9) that specify the page in the main memory to be written and
9 don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first erase the
selected page in main memory (the erased state is a logic 1) and then program the data stored
in the buffer into the specified page in main memory. Both the erase and the programming of the
page are internally self-timed and should take place in a maximum time of tEP. During this time,
the status register and the RDY/BUSY pin will indicate that the part is busy.
7.3
Buffer to Main Memory Page Program without Built-in Erase
A previously-erased page within main memory can be programmed with the contents of either
buffer 1 or buffer 2. A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into
the device. For the DataFlash standard page size (528 bytes), the opcode must be followed by
three address bytes consist of 1 don’t care bit, 13 page address bits (PA12 - PA0) that specify
the page in the main memory to be written and 10 don’t care bits. To perform a buffer to main
memory page program without built-in erase for the binary page size (512 bytes), the opcode
88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three address
bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the
main memory to be written and 9 don’t care bits. When a low-to-high transition occurs on the CS
pin, the part will program the data stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory that is being programmed has been previously
erased using one of the erase commands (Page Erase or Block Erase). The programming of the
page is internally self-timed and should take place in a maximum time of tP. During this time, the
status register and the RDY/BUSY pin will indicate that the part is busy.
8
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
7.4
Page Erase
The Page Erase command can be used to individually erase any page in the main memory array
allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a
page erase in the DataFlash standard page size (528 bytes), an opcode of 81H must be loaded
into the device, followed by three address bytes comprised of 1 don’t care bit, 13 page address
bits (PA12 - PA0) that specify the page in the main memory to be erased and 10 don’t care bits.
To perform a page erase in the binary page size (512 bytes), the opcode 81H must be loaded
into the device, followed by three address bytes consist of 2 don’t care bits, 13 page address bits
(A21 - A9) that specify the page in the main memory to be erased and 9 don’t care bits. When a
low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased
state is a logical 1). The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the status register and the RDY/BUSY pin will indicate that the
part is busy.
7.5
Block Erase
A block of eight pages can be erased at one time. This command is useful when large amounts
of data has to be written into the device. This will avoid using multiple Page Erase Commands.
To perform a block erase for the DataFlash standard page size (528 bytes), an opcode of 50H
must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit,
10 page address bits (PA12 -PA3) and 13 don’t care bits. The 10 page address bits are used to
specify which block of eight pages is to be erased. To perform a block erase for the binary page
size (512 bytes), the opcode 50H must be loaded into the device, followed by three address
bytes consisting of 2 don’t care bits, 10 page address bits (A21 - A12) and 12 don’t care bits.
The 10 page address bits are used to specify which block of eight pages is to be erased. When
a low-to-high transition occurs on the CS pin, the part will erase the selected block of eight
pages. The erase operation is internally self-timed and should take place in a maximum time of
tBE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.
Table 7-1.
Block Erase Addressing
PA12/
A21
PA11/
A20
PA10/
A19
PA9/
A18
PA8/
A17
PA7/
A16
PA6/
A15
PA5/
A14
PA4/
A13
PA3/
A12
PA2/
A11
PA1/
A10
PA0/
A9
Block
0
0
0
0
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
0
0
0
0
1
0
X
X
X
2
0
0
0
0
0
0
0
0
1
1
X
X
X
3
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
1
1
1
1
0
0
X
X
X
1020
1
1
1
1
1
1
1
1
0
1
X
X
X
1021
1
1
1
1
1
1
1
1
1
0
X
X
X
1022
1
1
1
1
1
1
1
1
1
1
X
X
X
1023
9
3597N–DFLASH–04/09
7.6
Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
There are 64 sectors and only one sector can be erased at one time. To perform sector 0a or
sector 0b erase for the DataFlash standard page size (528 bytes), an opcode of 7CH must be
loaded into the device, followed by three address bytes comprised of 1 don’t care bit, 10 page
address bits (PA12 - PA3) and 13 don’t care bits. To perform a sector 1-63 erase, the opcode
7CH must be loaded into the device, followed by three address bytes comprised of 1 don’t
care bit, 6 page address bits (PA12 - PA7) and 17 don’t care bits. To perform sector 0a or sector
0b erase for the binary page size (512 bytes), an opcode of 7CH must be loaded into the
device, followed by three address bytes comprised of 2 don’t care bit and 10 page address bits
(A21 - A12) and 12 don’t care bits. To perform a sector 1-63 erase, the opcode 7CH must be
loaded into the device, followed by three address bytes comprised of 2 don’t care bits and
6 page address bits (A21 - A16) and 16 don’t care bits. The page address bits are used to specify any valid address location within the sector which is to be erased. When a low-to-high
transition occurs on the CS pin, the part will erase the selected sector. The erase operation is
internally self-timed and should take place in a maximum time of tSE. During this time, the status
register and the RDY/BUSY pin will indicate that the part is busy.
Table 7-2.
Sector Erase Addressing
PA12/
A21
PA11/
A20
PA10/
A19
PA9/
A18
PA8/
A17
PA7/
A16
PA6/
A15
PA5/
A14
PA4/
A13
PA3/
A12
PA2/
A11
PA1/
A10
PA0/
A9
Sector
0
0
0
0
0
0
0
0
0
0
X
X
X
0a
0
0
0
0
0
0
0
0
0
1
X
X
X
0b
0
0
0
0
0
1
X
X
X
X
X
X
X
1
0
0
0
0
1
0
X
X
X
X
X
X
X
2
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
0
0
X
X
X
X
X
X
X
60
1
1
1
1
0
1
X
X
X
X
X
X
X
61
1
1
1
1
1
0
X
X
X
X
X
X
X
62
1
1
1
1
1
1
X
X
X
X
X
X
X
63
7.7
Chip Erase(1)
The entire main memory can be erased at one time by using the Chip Erase command.
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH
must be clocked into the device. Since the entire memory array is to be erased, no address
bytes need to be clocked into the device, and any data clocked in after the opcode will be
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deasserted to start the erase process. The erase operation is internally self-timed and should take
place in a time of tCE. During this time, the Status Register will indicate that the device is busy.
The Chip Erase command will not affect sectors that are protected or locked down; the contents
of those sectors will remain unchanged. Only those sectors that are not protected or locked
down will be erased.
Note:
10
1. Refer to the errata regarding Chip Erase on page 56.
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
The WP pin can be asserted while the device is erasing, but protection will not be activated until
the internal erase cycle completes.
Command
Byte 1
Byte 2
Byte 3
Byte 4
Chip Erase
C7H
94H
80H
9AH
Figure 7-1.
Chip Erase
CS
SI
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Each transition
represents 8 bits
Note:
7.8
1. Refer to the errata regarding Chip Erase on page 56.
Main Memory Page Program Through Buffer
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program
with Built-in Erase operations. Data is first clocked into buffer 1 or buffer 2 from the input pin (SI)
and then programmed into a specified page in the main memory. To perform a main memory
page program through buffer for the DataFlash standard page size (528 bytes), a 1-byte opcode,
82H for buffer 1 or 85H for buffer 2, must first be clocked into the device, followed by three
address bytes. The address bytes are comprised of 1 don’t care bit, 13 page address bits,
(PA12 - PA0) that select the page in the main memory where data is to be written, and 10 buffer
address bits (BFA9 - BFA0) that select the first byte in the buffer to be written. To perform a
main memory page program through buffer for the binary page size (512 bytes), the opcode 82H
for buffer 1 or 85H for buffer 2, must be clocked into the device followed by three address bytes
consisting of 2 don’t care bits, 13 page address bits (A21 - A9) that specify the page in the main
memory to be written, and 9 buffer address bits (BFA8 - BFA0) that selects the first byte in the
buffer to be written. After all address bytes are clocked in, the part will take data from the input
pins and store it in the specified data buffer. If the end of the buffer is reached, the device will
wrap around back to the beginning of the buffer. When there is a low-to-high transition on the CS
pin, the part will first erase the selected page in main memory to all 1s and then program the
data stored in the buffer into that memory page. Both the erase and the programming of the
page are internally self-timed and should take place in a maximum time of tEP. During this time,
the status register and the RDY/BUSY pin will indicate that the part is busy.
8. Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against
inadvertent or erroneous program and erase cycles. The software controlled method relies on
the use of software commands to enable and disable sector protection while the hardware controlled method employs the use of the Write Protect (WP) pin. The selection of which sectors
that are to be protected or unprotected against program and erase operations is specified in the
nonvolatile Sector Protection Register. The status of whether or not sector protection has been
enabled or disabled by either the software or the hardware controlled methods can be determined by checking the Status Register.
11
3597N–DFLASH–04/09
8.1
8.1.1
Software Sector Protection
Enable Sector Protection Command
Sectors specified for protection in the Sector Protection Register can be protected from program
and erase operations by issuing the Enable Sector Protection command. To enable the sector
protection using the software controlled method, the CS pin must first be asserted as it would be
with any other command. Once the CS pin has been asserted, the appropriate 4-byte command
sequence must be clocked in via the input pin (SI). After the last bit of the command sequence
has been clocked in, the CS pin must be deasserted after which the sector protection will be
enabled.
Command
Enable Sector Protection
Figure 8-1.
Byte 1
Byte 2
Byte 3
Byte 4
3DH
2AH
7FH
A9H
Enable Sector Protection
CS
Opcode
Byte 1
SI
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Each transition
represents 8 bits
8.1.2
Disable Sector Protection Command
To disable the sector protection using the software controlled method, the CS pin must first be
asserted as it would be with any other command. Once the CS pin has been asserted, the
appropriate 4-byte sequence for the Disable Sector Protection command must be clocked in via
the input pin (SI). After the last bit of the command sequence has been clocked in, the CS pin
must be deasserted after which the sector protection will be disabled. The WP pin must be in the
deasserted state; otherwise, the Disable Sector Protection command will be ignored.
Command
Disable Sector Protection
Figure 8-2.
Byte 1
Byte 2
Byte 3
Byte 4
3DH
2AH
7FH
9AH
Disable Sector Protection
CS
SI
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Each transition
represents 8 bits
8.1.3
Various Aspects About Software Controlled Protection
Software controlled protection is useful in applications in which the WP pin is not or cannot be
controlled by a host processor. In such instances, the WP pin may be left floating (the WP pin is
internally pulled high) and sector protection can be controlled using the Enable Sector Protection
and Disable Sector Protection commands.
If the device is power cycled, then the software controlled protection will be disabled. Once the
device is powered up, the Enable Sector Protection command should be reissued if sector protection is desired and if the WP pin is not used.
12
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
9. Hardware Controlled Protection
Sectors specified for protection in the Sector Protection Register and the Sector Protection Register itself can be protected from program and erase operations by asserting the WP pin and
keeping the pin in its asserted state. The Sector Protection Register and any sector specified for
protection cannot be erased or reprogrammed as long as the WP pin is asserted. In order to
modify the Sector Protection Register, the WP pin must be deasserted. If the WP pin is permanently connected to GND, then the content of the Sector Protection Register cannot be changed.
If the WP pin is deasserted, or permanently connected to VCC, then the content of the Sector
Protection Register can be modified.
The WP pin will override the software controlled protection method but only for protecting the
sectors. For example, if the sectors were not previously protected by the Enable Sector Protection command, then simply asserting the WP pin would enable the sector protection within the
maximum specified tWPE time. When the WP pin is deasserted; however, the sector protection
would no longer be enabled (after the maximum specified tWPD time) as long as the Enable Sector Protection command was not issued while the WP pin was asserted. If the Enable Sector
Protection command was issued before or while the WP pin was asserted, then simply deasserting the WP pin would not disable the sector protection. In this case, the Disable Sector
Protection command would need to be issued while the WP pin is deasserted to disable the sector protection. The Disable Sector Protection command is also ignored whenever the WP pin is
asserted.
A noise filter is incorporated to help protect against spurious noise that may inadvertently assert
or deassert the WP pin.
The table below details the sector protection status for various scenarios of the WP pin, the
Enable Sector Protection command, and the Disable Sector Protection command.
Figure 9-1.
WP Pin and Protection Status
1
3
2
WP
Table 9-1.
WP Pin and Protection Status
Enable Sector Protection
Command
Disable Sector
Protection Command
Sector Protection
Status
Sector
Protection
Register
High
Command Not Issued Previously
–
Issue Command
X
Issue Command
–
Disabled
Disabled
Enabled
Read/Write
Read/Write
Read/Write
Low
X
X
Enabled
Read Only
High
Command Issued During Period 1
or 2
–
Issue Command
Not Issued Yet
Issue Command
–
Enabled
Disabled
Enabled
Read/Write
Read/Write
Read/Write
Time
Period
WP Pin
1
2
3
13
3597N–DFLASH–04/09
9.1
Sector Protection Register
The nonvolatile Sector Protection Register specifies which sectors are to be protected or unprotected with either the software or hardware controlled protection methods. The Sector Protection
Register contains 64 bytes of data, of which byte locations 0 through 63 contain values that
specify whether sectors 0 through 63 will be protected or unprotected. The Sector Protection
Register is user modifiable and must first be erased before it can be reprogrammed. Table 9-3
illustrates the format of the Sector Protection Register.:
Table 9-2.
Sector Protection Register
Sector Number
0 (0a, 0b)
Protected
00H
Sector 0 (0a, 0b)
0a
0b
(Pages 0-7)
(Pages 8-127)
Bit 7, 6
Bit 5, 4
Bit 3, 2
Bit 1, 0
Data
Value
Sectors 0a, 0b Unprotected
00
00
xx
xx
0xH
Protect Sector 0a (Pages 0-7)
11
00
xx
xx
CxH
Protect Sector 0b (Pages 8-127)
00
11
xx
xx
3xH
Protect Sectors 0a (Pages 0-7), 0b
(Pages 8-127)(1)
11
11
xx
xx
FxH
Note:
14
FFH
See Table 9-3
Unprotected
Table 9-3.
1 to 63
1. The default value for bytes 0 through 63 when shipped from Atmel is 00H.
x = don’t care.
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
9.1.1
Erase Sector Protection Register Command
In order to modify and change the values of the Sector Protection Register, it must first be
erased using the Erase Sector Protection Register command.
To erase the Sector Protection Register, the CS pin must first be asserted as it would be with
any other command. Once the CS pin has been asserted, the appropriate 4-byte opcode
sequence must be clocked into the device via the SI pin. The 4-byte opcode sequence must
start with 3DH and be followed by 2AH, 7FH, and CFH. After the last bit of the opcode sequence
has been clocked in, the CS pin must be deasserted to initiate the internally self-timed erase
cycle. The erasing of the Sector Protection Register should take place in a time of tPE, during
which time the Status Register will indicate that the device is busy. If the device is powereddown before the completion of the erase cycle, then the contents of the Sector Protection Register cannot be guaranteed.
The Sector Protection Register can be erased with the sector protection enabled or disabled.
Since the erased state (FFH) of each byte in the Sector Protection Register is used to indicate
that a sector is specified for protection, leaving the sector protection enabled during the erasing
of the register allows the protection scheme to be more effective in the prevention of accidental
programming or erasing of the device. If for some reason an erroneous program or erase command is sent to the device immediately after erasing the Sector Protection Register and before
the register can be reprogrammed, then the erroneous program or erase command will not be
processed because all sectors would be protected.
Command
Erase Sector Protection Register
Figure 9-2.
Byte 1
Byte 2
Byte 3
Byte 4
3DH
2AH
7FH
CFH
Erase Sector Protection Register
CS
SI
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Each transition
represents 8 bits
9.1.2
Program Sector Protection Register Command
Once the Sector Protection Register has been erased, it can be reprogrammed using the Program Sector Protection Register command.
To program the Sector Protection Register, the CS pin must first be asserted and the appropriate 4-byte opcode sequence must be clocked into the device via the SI pin. The 4-byte opcode
sequence must start with 3DH and be followed by 2AH, 7FH, and FCH. After the last bit of the
opcode sequence has been clocked into the device, the data for the contents of the Sector Protection Register must be clocked in. As described in Section 9.1, the Sector Protection Register
contains 64 bytes of data, so 64 bytes must be clocked into the device. The first byte of data corresponds to sector 0, the second byte corresponds to sector 1, and so on with the last byte of
data corresponding to sector 63.
15
3597N–DFLASH–04/09
After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle. The programming of the Sector Protection Register should take
place in a time of tP, during which time the Status Register will indicate that the device is busy. If
the device is powered-down during the program cycle, then the contents of the Sector Protection
Register cannot be guaranteed.
If the proper number of data bytes is not clocked in before the CS pin is deasserted, then the
protection status of the sectors corresponding to the bytes not clocked in can not be guaranteed.
For example, if only the first two bytes are clocked in instead of the complete 62 bytes, then the
protection status of the last 62 sectors cannot be guaranteed. Furthermore, if more than
64 bytes of data is clocked into the device, then the data will wrap back around to the beginning
of the register. For instance, if 65 bytes of data are clocked in, then the 65th byte will be stored at
byte location 0 of the Sector Protection Register.
If a value other than 00H or FFH is clocked into a byte location of the Sector Protection Register,
then the protection status of the sector corresponding to that byte location cannot be guaranteed. For example, if a value of 17H is clocked into byte location 2 of the Sector Protection
Register, then the protection status of sector 2 cannot be guaranteed.
The Sector Protection Register can be reprogrammed while the sector protection enabled or disabled. Being able to reprogram the Sector Protection Register with the sector protection enabled
allows the user to temporarily disable the sector protection to an individual sector rather than disabling sector protection completely.
The Program Sector Protection Register command utilizes the internal SRAM buffer 1 for processing. Therefore, the contents of the buffer 1 will be altered from its previous state when this
command is issued.
Command
Program Sector Protection Register
Figure 9-3.
Byte 1
Byte 2
Byte 3
Byte 4
3DH
2AH
7FH
FCH
Program Sector Protection Register
CS
SI
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Data Byte
n
Data Byte
n+1
Data Byte
n + 63
Each transition
represents 8 bits
16
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
9.1.3
Read Sector Protection Register Command
To read the Sector Protection Register, the CS pin must first be asserted. Once the CS pin has
been asserted, an opcode of 32H and 3 dummy bytes must be clocked in via the SI pin. After the
last bit of the opcode and dummy bytes have been clocked in, any additional clock pulses on the
SCK pins will result in data for the content of the Sector Protection Register being output on the
SO pin. The first byte corresponds to sector 0 (0a, 0b), the second byte corresponds to sector 1
and the last byte (byte 64) corresponds to sector 63. Once the last byte of the Sector Protection
Register has been clocked out, any additional clock pulses will result in undefined data being
output on the SO pin. The CS must be deasserted to terminate the Read Sector Protection Register operation and put the output into a high-impedance state.
Command
Read Sector Protection Register
Note:
Figure 9-4.
Byte 1
Byte 2
Byte 3
Byte 4
32H
xxH
xxH
xxH
xx = Dummy Byte
Read Sector Protection Register
CS
SI
Opcode
X
X
X
Data Byte
n
SO
Data Byte
n+1
Data Byte
n + 63
Each transition
represents 8 bits
9.1.4
Various Aspects About the Sector Protection Register
The Sector Protection Register is subject to a limit of 10,000 erase/program cycles. Users are
encouraged to carefully evaluate the number of times the Sector Protection Register will be
modified during the course of the applications’ life cycle. If the application requires that the Sector Protection Register be modified more than the specified limit of 10,000 cycles because the
application needs to temporarily unprotect individual sectors (sector protection remains enabled
while the Sector Protection Register is reprogrammed), then the application will need to limit this
practice. Instead, a combination of temporarily unprotecting individual sectors along with disabling sector protection completely will need to be implemented by the application to ensure that
the limit of 10,000 cycles is not exceeded.
17
3597N–DFLASH–04/09
10. Security Features
10.1
Sector Lockdown
The device incorporates a Sector Lockdown mechanism that allows each individual sector to be
permanently locked so that it becomes read only. This is useful for applications that require the
ability to permanently protect a number of sectors against malicious attempts at altering program
code or security information. Once a sector is locked down, it can never be erased or programmed, and it can never be unlocked.
To issue the Sector Lockdown command, the CS pin must first be asserted as it would be for
any other command. Once the CS pin has been asserted, the appropriate 4-byte opcode
sequence must be clocked into the device in the correct order. The 4-byte opcode sequence
must start with 3DH and be followed by 2AH, 7FH, and 30H. After the last byte of the command
sequence has been clocked in, then three address bytes specifying any address within the sector to be locked down must be clocked into the device. After the last address bit has been
clocked in, the CS pin must then be deasserted to initiate the internally self-timed lockdown
sequence.
The lockdown sequence should take place in a maximum time of tP, during which time the Status
Register will indicate that the device is busy. If the device is powered-down before the completion of the lockdown sequence, then the lockdown status of the sector cannot be guaranteed. In
this case, it is recommended that the user read the Sector Lockdown Register to determine the
status of the appropriate sector lockdown bits or bytes and reissue the Sector Lockdown command if necessary.
Command
Sector Lockdown
Byte 1
Byte 2
Byte 3
Byte 4
3DH
2AH
7FH
30H
Figure 10-1. Sector Lockdown
CS
SI
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Address
Bytes
Address
Bytes
Address
Bytes
Each transition
represents 8 bits
18
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
10.1.1
Sector Lockdown Register
Sector Lockdown Register is a nonvolatile register that contains 64 bytes of data, as shown
below:
Sector Number
0 (0a, 0b)
Locked
FFH
See Below
Unlocked
Table 10-1.
10.1.2
1 to 63
00H
Sector 0 (0a, 0b)
0a
0b
(Pages 0-7)
(Pages 8-127)
Bit 7, 6
Bit 5, 4
Bit 3, 2
Bit 1, 0
Data
Value
Sectors 0a, 0b Unlocked
00
00
00
00
00H
Sector 0a Locked (Pages 0-7)
11
00
00
00
C0H
Sector 0b Locked (Pages 8-127)
00
11
00
00
30H
Sectors 0a, 0b Locked (Pages 0-127)
11
11
00
00
F0H
Reading the Sector Lockdown Register
The Sector Lockdown Register can be read to determine which sectors in the memory array are
permanently locked down. To read the Sector Lockdown Register, the CS pin must first be
asserted. Once the CS pin has been asserted, an opcode of 35H and 3 dummy bytes must be
clocked into the device via the SI pin. After the last bit of the opcode and dummy bytes have
been clocked in, the data for the contents of the Sector Lockdown Register will be clocked out
on the SO pin. The first byte corresponds to sector 0 (0a, 0b) the second byte corresponds to
sector 1 and the last byte (byte 16) corresponds to sector 15. After the last byte of the Sector
Lockdown Register has been read, additional pulses on the SCK pin will simply result in undefined data being output on the SO pin.
Deasserting the CS pin will terminate the Read Sector Lockdown Register operation and put the
SO pin into a high-impedance state.
Table 10-2 details the values read from the Sector Lockdown Register.
Table 10-2.
Sector Lockdown Register
Command
Read Sector Lockdown Register
Note:
Byte 1
Byte 2
Byte 3
Byte 4
35H
xxH
xxH
xxH
xx = Dummy Byte
Figure 10-2. Read Sector Lockdown Register
CS
SI
Opcode
X
X
X
Data Byte
n
SO
Data Byte
n+1
Data Byte
n + 63
Each transition
represents 8 bits
19
3597N–DFLASH–04/09
10.2
Security Register
The device contains a specialized Security Register that can be used for purposes such
as unique device serialization or locked key storage. The register is comprised of a total of
128 bytes that is divided into two portions. The first 64 bytes (byte locations 0 through 63) of the
Security Register are allocated as a one-time user programmable space. Once these 64 bytes
have been programmed, they cannot be reprogrammed. The remaining 64 bytes of the register
(byte locations 64 through 127) are factory programmed by Atmel and will contain a unique
value for each device. The factory programmed data is fixed and cannot be changed.
Table 10-3.
Security Register
Security Register Byte Number
0
Data Type
10.2.1
1
•••
62
63
One-time User Programmable
64
65
•••
126
127
Factory Programmed By Atmel
Programming the Security Register
The user programmable portion of the Security Register does not need to be erased before it is
programmed.
To program the Security Register, the CS pin must first be asserted and the appropriate 4-byte
opcode sequence must be clocked into the device in the correct order. The 4-byte opcode
sequence must start with 9BH and be followed by 00H, 00H, and 00H. After the last bit of the
opcode sequence has been clocked into the device, the data for the contents of the 64-byte user
programmable portion of the Security Register must be clocked in.
After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed program cycle. The programming of the Security Register should take place in a
time of tP, during which time the Status Register will indicate that the device is busy. If the device
is powered-down during the program cycle, then the contents of the 64-byte user programmable
portion of the Security Register cannot be guaranteed.
If the full 64 bytes of data is not clocked in before the CS pin is deasserted, then the values of
the byte locations not clocked in cannot be guaranteed. For example, if only the first two bytes
are clocked in instead of the complete 64 bytes, then the remaining 62 bytes of the user programmable portion of the Security Register cannot be guaranteed. Furthermore, if more than
64 bytes of data is clocked into the device, then the data will wrap back around to the beginning
of the register. For instance, if 65 bytes of data are clocked in, then the 65th byte will be stored at
byte location 0 of the Security Register.
The user programmable portion of the Security Register can only be programmed one
time. Therefore, it is not possible to only program the first two bytes of the register and then program the remaining 62 bytes at a later time.
The Program Security Register command utilizes the internal SRAM buffer 1 for processing.
Therefore, the contents of the buffer 1 will be altered from its previous state when this command
is issued.
Figure 10-3. Program Security Register
CS
SI
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Data Byte
n
Data Byte
n+1
Data Byte
n+x
Each transition
represents 8 bits
20
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
10.2.2
Reading the Security Register
The Security Register can be read by first asserting the CS pin and then clocking in an opcode
of 77H followed by three dummy bytes. After the last don't care bit has been clocked in, the content of the Security Register can be clocked out on the SO pins. After the last byte of the
Security Register has been read, additional pulses on the SCK pin will simply result in undefined
data being output on the SO pins.
Deasserting the CS pin will terminate the Read Security Register operation and put the SO pins
into a high-impedance state.
Figure 10-4. Read Security Register
CS
SI
Opcode
X
X
X
Data Byte
n
SO
Data Byte
n+1
Data Byte
n+x
Each transition
represents 8 bits
11. Additional Commands
11.1
Main Memory Page to Buffer Transfer
A page of data can be transferred from the main memory to either buffer 1 or buffer 2. To start
the operation for the DataFlash standard page size (528 bytes), a 1-byte opcode, 53H for buffer
1 and 55H for buffer 2, must be clocked into the device, followed by three address bytes comprised of 1 don’t care bit, 13-page address bit (PA12 - PA0), which specify the page in main
memory that is to be transferred, and 10 don’t care bits. To perform a main memory page to buffer transfer for the binary page size (512 bytes), the opcode 53H for buffer 1 or 55H for buffer 2,
must be clocked into the device followed by three address bytes consisting of 2 don’t care bits,
13-page address bits (A21 - A9) which specify the page in the main memory that is to be transferred, and 9 don’t care bits. The CS pin must be low while toggling the SCK pin to load the
opcode and the address bytes from the input pin (SI). The transfer of the page of data from the
main memory to the buffer will begin when the CS pin transitions from a low to a high state. During the transfer of a page of data (tXFR), the status register can be read or the RDY/BUSY can be
monitored to determine whether the transfer has been completed.
21
3597N–DFLASH–04/09
11.2
Main Memory Page to Buffer Compare
A page of data in the main memory can be compared to the data in buffer 1 or buffer 2. To initiate the operation for DataFlash standard page size, a 1-byte opcode, 60H for buffer 1 and 61H
for buffer 2, must be clocked into the device, followed by three address bytes consisting of
1 don’t care bit, 13-page address bits (PA12 - PA0) that specify the page in the main memory
that is to be compared to the buffer, and 10 don’t care bits. To start a main memory page to buffer compare for a binary page size, the opcode 60H for buffer 1 or 61H for buffer 2, must be
clocked into the device followed by three address bytes consisting of 2 don’t care bits, 13 page
address bits (A21 - A9) that specify the page in the main memory that is to be compared to the
buffer, and 9 don’t care bits. The CS pin must be low while toggling the SCK pin to load the
opcode and the address bytes from the input pin (SI). On the low-to-high transition of the CS pin,
the data bytes in the selected main memory page will be compared with the data bytes in buffer
1 or buffer 2. During this time (tCOMP), the status register and the RDY/BUSY pin will indicate that
the part is busy. On completion of the compare operation, bit 6 of the status register is updated
with the result of the compare.
11.3
Auto Page Rewrite
This mode is only needed if multiple bytes within a page or multiple pages of data are modified in
a random fashion within a sector. This mode is a combination of two operations: Main Memory
Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in Erase. A page of
data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data
(from buffer 1 or buffer 2) is programmed back into its original page of main memory. To start the
rewrite operation for the DataFlash standard page size (528 bytes), a 1-byte opcode, 58H for
buffer 1 or 59H for buffer 2, must be clocked into the device, followed by three address bytes
comprised of 1 don’t care bit, 13-page address bits (PA12-PA0) that specify the page in main
memory to be rewritten and 10 don’t care bits. To initiate an auto page rewrite for a binary page
size (512 bytes), the opcode 58H for buffer 1 or 59H for buffer 2, must be clocked into the device
followed by three address bytes consisting of 2 don’t care bits, 13 page address bits (A21 - A9)
that specify the page in the main memory that is to be written and 9 don’t care bits. When a lowto-high transition occurs on the CS pin, the part will first transfer data from the page in main
memory to a buffer and then program the data from the buffer back into same page of main
memory. The operation is internally self-timed and should take place in a maximum time of tEP.
During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.
If a sector is programmed or reprogrammed sequentially page by page, then the programming
algorithm shown in Figure 25-1 (page 46) is recommended. Otherwise, if multiple bytes in a
page or several pages are programmed randomly in a sector, then the programming algorithm
shown in Figure 25-2 (page 47) is recommended. Each page within a sector must be
updated/rewritten at least once within every 10,000 cumulative page erase/program operations
in that sector.
22
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
11.4
Status Register Read
The status register can be used to determine the device’s ready/busy status, page size, a Main
Memory Page to Buffer Compare operation result, the Sector Protection status or the device
density. The Status Register can be read at any time, including during an internally self-timed
program or erase operation. To read the status register, the CS pin must be asserted and the
opcode of D7H must be loaded into the device. After the opcode is clocked in, the 1-byte status
register will be clocked out on the output pin (SO), starting with the next clock cycle. The data in
the status register, starting with the MSB (bit 7), will be clocked out on the SO pin during the next
eight clock cycles. After the one byte of the status register has been clocked out, the sequence
will repeat itself (as long as CS remains low and SCK is being toggled). The data in the status
register is constantly updated, so each repeating sequence will output new data.
Ready/busy status is indicated using bit 7 of the status register. If bit 7 is a 1, then the device is
not busy and is ready to accept the next command. If bit 7 is a 0, then the device is in a busy
state. Since the data in the status register is constantly updated, the user must toggle SCK pin to
check the ready/busy status. There are several operations that can cause the device to be in a
busy state: Main Memory Page to Buffer Transfer, Main Memory Page to Buffer Compare, Buffer to Main Memory Page Program, Main Memory Page Program through Buffer, Page Erase,
Block Erase, Sector Erase, Chip Erase and Auto Page Rewrite.
The result of the most recent Main Memory Page to Buffer Compare operation is indicated using
bit 6 of the status register. If bit 6 is a 0, then the data in the main memory page matches the
data in the buffer. If bit 6 is a 1, then at least one bit of the data in the main memory page does
not match the data in the buffer.
Bit 1 in the Status Register is used to provide information to the user whether or not the sector
protection has been enabled or disabled, either by software-controlled method or hardware-controlled method. A logic 1 indicates that sector protection has been enabled and logic 0 indicates
that sector protection has been disabled.
Bit 0 in the Status Register indicates whether the page size of the main memory array is configured for “power of 2” binary page size (512 bytes) or DataFlash standard page size (528 bytes).
If bit 0 is a 1, then the page size is set to 512 bytes. If bit 0 is a 0, then the page size is set to
528 bytes.
The device density is indicated using bits 5, 4, 3, and 2 of the status register. For the
AT45DB321D, the four bits are 1101 The decimal value of these four binary bits does not equate
to the device density; the four bits represent a combinational code relating to differing densities
of DataFlash devices. The device density is not the same as the density code indicated in the
JEDEC device ID information. The device density is provided only for backward compatibility.
Table 11-1.
Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
RDY/BUSY
COMP
1
1
0
1
PROTECT
PAGE SIZE
23
3597N–DFLASH–04/09
12. Deep Power-down
After initial power-up, the device will default in standby mode. The Deep Power-down command
allows the device to enter into the lowest power consumption mode. To enter the Deep Powerdown mode, the CS pin must first be asserted. Once the CS pin has been asserted, an opcode
of B9H command must be clocked in via input pin (SI). After the last bit of the command has
been clocked in, the CS pin must be de-asserted to initiate the Deep Power-down operation.
After the CS pin is de-asserted, the device will enter the Deep Power-down mode within the
maximum tEDPD time. Once the device has entered the Deep Power-down mode, all instructions
are ignored except for the Resume from Deep Power-down command.
Command
Opcode
Deep Power-down
B9H
Figure 12-1. Deep Power-down
CS
SI
Opcode
Each transition
represents 8 bits
12.1
Resume from Deep Power-down
The Resume from Deep Power-down command takes the device out of the Deep Power-down
mode and returns it to the normal standby mode. To Resume from Deep Power-down mode, the
CS pin must first be asserted and an opcode of ABH command must be clocked in via input pin
(SI). After the last bit of the command has been clocked in, the CS pin must be de-asserted to
terminate the Deep Power-down mode. After the CS pin is de-asserted, the device will return to
the normal standby mode within the maximum tRDPD time. The CS pin must remain high during
the tRDPD time before the device can receive any commands. After resuming form Deep Powerdown, the device will return to the normal standby mode.
Command
Opcode
Resume from Deep Power-down
ABH
Figure 12-2. Resume from Deep Power-Down
CS
SI
Opcode
Each transition
represents 8 bits
24
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
13. “Power of 2” Binary Page Size Option
“Power of 2” binary page size Configuration Register is a user-programmable nonvolatile register that allows the page size of the main memory to be configured for binary page size
(512 bytes) or DataFlash standard page size (528 bytes). The “power of 2” page size is a onetime programmable configuration register and once the device is configured for “power
of 2” page size, it cannot be reconfigured again. The devices are initially shipped with the
page size set to 528 bytes. The user has the option of ordering binary page size (512
bytes) devices from the factory. For details, please refer to Section 26. ”Ordering Information” on
page 48.
For the binary “power of 2” page size to become effective, the following steps must be followed:
1. Program the one-time programmable configuration resister using opcode sequence
3DH, 2AH, 80H and A6H (please see Section 13.1).
2. Power cycle the device (i.e. power down and power up again).
3. The page for the binary page size can now be programmed.
If the above steps are not followed to set the page size prior to page programming, incorrect
data during a read operation may be encountered.
13.1
Programming the Configuration Register
To program the Configuration Register for “power of 2” binary page size, the CS pin must first be
asserted as it would be with any other command. Once the CS pin has been asserted, the
appropriate 4-byte opcode sequence must be clocked into the device in the correct order. The
4-byte opcode sequence must start with 3DH and be followed by 2AH, 80H, and A6H. After the
last bit of the opcode sequence has been clocked in, the CS pin must be deasserted to initiate
the internally self-timed program cycle. The programming of the Configuration Register should
take place in a time of tP, during which time the Status Register will indicate that the device is
busy. The device must be power cycled after the completion of the program cycle to set the
“power of 2” page size. If the device is powered-down before the completion of the program
cycle, then setting the Configuration Register cannot be guaranteed. However, the user should
check bit 0 of the status register to see whether the page size was configured for binary page
size. If not, the command can be re-issued again.
Command
Power of Two Page Size
Byte 1
Byte 2
Byte 3
Byte 4
3DH
2AH
80H
A6H
Opcode
Byte 3
Opcode
Byte 4
Figure 13-1. Erase Sector Protection Register
CS
SI
Opcode
Byte 1
Opcode
Byte 2
Each transition
represents 8 bits
25
3597N–DFLASH–04/09
14. Manufacturer and Device ID Read
Identification information can be read from the device to enable systems to electronically query
and identify the device while it is in system. The identification method and the command opcode
comply with the JEDEC standard for “Manufacturer and Device ID Read Methodology for SPI
Compatible Serial Interface Memory Devices”. The type of information that can be read from the
device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID, and the vendor specific Extended Device Information.
To read the identification information, the CS pin must first be asserted and the opcode of 9FH
must be clocked into the device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during the subsequent clock cycles. The first byte
that will be output will be the Manufacturer ID followed by two bytes of Device ID information.
The fourth byte output will be the Extended Device Information String Length, which will be 00H
indicating that no Extended Device Information follows. As indicated in the JEDEC standard,
reading the Extended Device Information String Length and any subsequent data is optional.
Deasserting the CS pin will terminate the Manufacturer and Device ID Read operation and put
the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not
require that a full byte of data be read.
14.1
14.1.1
Manufacturer and Device ID Information
Byte 1 – Manufacturer ID
JEDEC Assigned Code
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
1FH
0
0
0
1
1
1
1
1
14.1.2
Manufacturer ID
Byte 2 – Device ID (Part 1)
Family Code
Density Code
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Family Code
27H
0
0
1
0
0
1
1
1
Density Code
14.1.3
MLC Code
00111 = 32-Mbit
Product Version Code
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
00H
0
0
0
0
0
0
0
1
MLC Code
000 = 1-bit/Cell Technology
Product Version
00001 = Second Version
Byte Count
00H = 0 Bytes of Information
Byte 4 – Extended Device Information String Length
Byte Count
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
00H
0
0
0
0
0
0
0
0
26
001 = DataFlash
Byte 3 – Device ID (Part 2)
Hex
Value
14.1.4
1FH = Atmel
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
CS
SI
9FH
Opcode
SO
1FH
27H
00H
01H
Data
Data
Manufacturer ID
Byte 1
Device ID
Byte 2
Device ID
Byte 3
Extended
Device
Information
String Length
Extended
Device
Information
Byte x
Extended
Device
Information
Byte x + 1
Each transition
represents 8 bits
This information would only be output
if the Extended Device Information String Length
value was something other than 00H.
Note:
Based on JEDEC publication 106 (JEP106), Manufacturer ID data can be comprised of any number of bytes. Some manufacturers may have
Manufacturer ID codes that are two, three or even four bytes long with the first byte(s) in the sequence being 7FH. A system should detect code
7FH as a “Continuation Code” and continue to read Manufacturer ID bytes. The first non-7FH byte would signify the last byte of Manufacturer ID
data. For Atmel (and some other manufacturers), the Manufacturer ID data is comprised of only one byte.
14.2
Operation Mode Summary
The commands described previously can be grouped into four different categories to better
describe which commands can be executed at what times.
Group A commands consist of:
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
Group B commands consist of:
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer 1 (or 2)
10. Auto Page Rewrite
Group C commands consist of:
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
4. Manufacturer and Device ID Read
27
3597N–DFLASH–04/09
Group D commands consist of:
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands, any command in Group C can be executed. The Group B commands using buffer 1
should use Group C commands using buffer 2 and vice versa. Finally, during the internally selftimed portion of a Group D command, only the Status Register Read command should be
executed.
15. Command Tables
Table 15-1.
Read Commands
Command
Opcode
Main Memory Page Read
D2H
Continuous Array Read (Legacy Command)
E8H
Continuous Array Read (Low Frequency)
03H
Continuous Array Read (High Frequency)
0BH
Buffer 1 Read (Low Frequency)
D1H
Buffer 2 Read (Low Frequency)
D3H
Buffer 1 Read
D4H
Buffer 2 Read
D6H
Table 15-2.
Program and Erase Commands
Command
Buffer 1 Write
84H
Buffer 2 Write
87H
Buffer 1 to Main Memory Page Program with Built-in Erase
83H
Buffer 2 to Main Memory Page Program with Built-in Erase
86H
Buffer 1 to Main Memory Page Program without Built-in Erase
88H
Buffer 2 to Main Memory Page Program without Built-in Erase
89H
Page Erase
81H
Block Erase
50H
Sector Erase
7CH
Chip Erase
28
Opcode
C7H, 94H, 80H, 9AH
Main Memory Page Program Through Buffer 1
82H
Main Memory Page Program Through Buffer 2
85H
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
Table 15-3.
Protection and Security Commands
Command
Opcode
Enable Sector Protection
3DH + 2AH + 7FH + A9H
Disable Sector Protection
3DH + 2AH + 7FH + 9AH
Erase Sector Protection Register
3DH + 2AH + 7FH + CFH
Program Sector Protection Register
3DH + 2AH + 7FH + FCH
Read Sector Protection Register
Sector Lockdown
32H
3DH + 2AH + 7FH + 30H
Read Sector Lockdown Register
Program Security Register
35H
9BH + 00H + 00H + 00H
Read Security Register
Table 15-4.
77H
Additional Commands
Command
Opcode
Main Memory Page to Buffer 1 Transfer
53H
Main Memory Page to Buffer 2 Transfer
55H
Main Memory Page to Buffer 1 Compare
60H
Main Memory Page to Buffer 2 Compare
61H
Auto Page Rewrite through Buffer 1
58H
Auto Page Rewrite through Buffer 2
59H
Deep Power-down
B9H
Resume from Deep Power-down
ABH
Status Register Read
D7H
Manufacturer and Device ID Read
9FH
Table 15-5.
Legacy Commands(1)
Command
Opcode
Buffer 1 Read
54H
Buffer 2 Read
56H
Main Memory Page Read
52H
Continuous Array Read
68H
Status Register Read
57H
Note:
1. These legacy commands are not recommended for new designs.
29
3597N–DFLASH–04/09
Table 15-6.
Detailed Bit-level Addressing Sequence for Binary Page Size (512 Bytes)
A
A
A
A
A
A
A
A
A
A
A
A
A
N/A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
1
50h
0
1
0
1
0
0
0
0
x
x
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
x
x
x
N/A
53h
0
1
0
1
0
0
1
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
55h
0
1
0
1
0
1
0
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
58h
0
1
0
1
1
0
0
0
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
59h
0
1
0
1
1
0
0
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
60h
0
1
1
0
0
0
0
0
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
61h
0
1
1
0
0
0
0
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
77h
0
1
1
1
0
1
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
N/A
7Ch
0
1
1
1
1
1
0
0
x
x
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
N/A
81h
1
0
0
0
0
0
0
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
X
x
x
x
x
x
x
x
x
N/A
82h
1
0
0
0
0
0
1
0
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
N/A
83h
1
0
0
0
0
0
1
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
X
x
x
x
x
x
x
x
x
N/A
84h
1
0
0
0
0
1
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
A
A
A
A
A
A
A
A
N/A
85h
1
0
0
0
0
1
0
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
N/A
86h
1
0
0
0
0
1
1
0
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
87h
1
0
0
0
0
1
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
A
A
A
A
A
A
A
A
N/A
88h
1
0
0
0
1
0
0
0
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
89h
1
0
0
0
1
0
0
1
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
x
x
x
x
x
x
x
x
x
N/A
A1
A
A
A2
A
A
A3
A
A
A4
A
A
A5
A
A
A6
A
A
A7
A
A
A8
A
A
A9
A
x
A10
x
x
A11
x
1
A12
1
1
A13
1
0
A14
0
1
A15
0
0
A16
0
0
A17
0
0
A18
0
0
A19
0
A20
03h
0Bh
Opcode
A21
A0
Address Byte
Reserved
Address Byte
Additional
Don’t Care
Bytes
Opcode
9Fh
1
0
0
1
1
1
1
1
N/A
N/A
N/A
N/A
B9h
1
0
1
1
1
0
0
1
N/A
N/A
N/A
N/A
ABh
1
0
1
0
1
0
1
1
N/A
D1h
1
1
0
1
0
0
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
D2h
1
1
0
1
0
0
1
0
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
4
D3h
1
1
0
1
0
0
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
A
A
A
A
A
A
A
A
N/A
D4h
1
1
0
1
0
1
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
A
A
A
A
A
A
A
A
1
D6h
1
1
0
1
0
1
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
A
A
A
A
A
A
A
A
A
1
D7h
1
1
0
1
0
1
1
1
N/A
E8h
1
1
1
0
1
0
0
0
x
x
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
Notes:
30
Address Byte
Reserved
Page Size = 512 bytes
N/A
N/A
A
N/A
A
A
N/A
A
A
A
A
A
A
N/A
A
N/A
N/A
4
x = Don’t Care
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
Table 15-7.
Detailed Bit-level Addressing Sequence for DataFlash Standard Page Size (528 Bytes)
Address Byte
BA0
B B B B B B B
B
N/A
B
B B B B B B B
B
1
x
x
BA1
B
P P P P P P B
BA2
P P P P P P B
P
BA3
P
P P P P P P
BA4
BA7
P P P P P P
x
BA5
BA8
x
1
BA6
BA9
1
1
PA0
1
0
PA1
0
1
PA2
0
0
PA3
0
0
PA4
0
0
PA8
0
0
PA9
0
Opcode
PA10
03h
0Bh
Opcode
PA11
Additional
Don’t Care
Bytes
PA12
PA5
Address Byte
PA6
Address Byte
PA7
Reserved
Page Size = 528 bytes
50h
0
1
0
1
0
0
0
0
x
P P P P P P
P
P P P
x
x
x
x
x
x
x
x
x
x
x
N/A
53h
0
1
0
1
0
0
1
1
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
55h
0
1
0
1
0
1
0
1
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
58h
0
1
0
1
1
0
0
0
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
59h
0
1
0
1
1
0
0
1
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
60h
0
1
1
0
0
0
0
0
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
61h
0
1
1
0
0
0
0
1
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
77h
0
1
1
1
0
1
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
N/A
7Ch
0
1
1
1
1
1
0
0
x
P P P P P P
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
N/A
81h
1
0
0
0
0
0
0
1
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
82h
1
0
0
0
0
0
1
0
x
P P P P P P
P
P P P P P P B
B
B B B B B B B
B
N/A
83h
1
0
0
0
0
0
1
1
x
P P P P P P
P
P P P P P P
x
x
x
x
x
N/A
84h
1
0
0
0
0
1
0
0
x
x
x
x
x
B
B
B B B B B B B
B
N/A
85h
1
0
0
0
0
1
0
1
x
P P P P P P
P
P P P P P P B
B
B B B B B B B
B
N/A
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
1
0
0
0
0
1
1
0
x
P P P P P P
P
P P P P P P
x
x
x
x
x
N/A
0
0
0
0
1
1
1
x
x
x
x
x
x
B
B
B B B B B B B
B
N/A
88h
1
0
0
0
1
0
0
0
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
89h
1
0
0
0
1
0
0
1
x
P P P P P P
P
P P P P P P
x
x
x
x
x
x
x
x
x
x
N/A
x
x
x
x
x
x
x
1
x
x
x
87h
x
x
x
86h
x
x
x
x
9Fh
1
0
0
1
1
1
1
1
N/A
N/A
N/A
N/A
B9h
1
0
1
1
1
0
0
1
N/A
N/A
N/A
N/A
ABh
1
0
1
0
1
0
1
1
N/A
D1h
1
1
0
1
0
0
0
1
x
x
x
x
x
D2h
1
1
0
1
0
0
1
0
x
P P P P P P
P
P P P P P P B
B
B B B B B B B
B
4
D3h
1
1
0
1
0
0
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B B B B B B B
B
N/A
D4h
1
1
0
1
0
1
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B B B B B B B
B
1
D6h
1
1
0
1
0
1
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B B B B B B B
B
1
D7h
1
1
0
1
0
1
1
1
N/A
E8h
1
1
1
0
1
0
0
0
x
P P P P P P
P
P P P P P P B
B
B B B B B B B
Notes:
P = Page Address Bit
N/A
x
x
x
x
B = Byte/Buffer Address Bit
N/A
x
x
x
x
x
B
B
N/A
B B B B B B B
N/A
B
N/A
N/A
N/A
B
4
x = Don’t Care
31
3597N–DFLASH–04/09
16. Power-on/Reset State
When power is first applied to the device, or when recovering from a reset condition, the device
will default to Mode 3. In addition, the output pin (SO) will be in a high impedance state, and a
high-to-low transition on the CS pin will be required to start a valid instruction. The mode (Mode
3 or Mode 0) will be automatically selected on every falling edge of CS by sampling the inactive
clock state.
16.1
Initial Power-up/Reset Timing Restrictions
At power up, the device must not be selected until the supply voltage reaches the VCC (min.) and
further delay of tVCSL. During power-up, the internal Power-on Reset circuitry keeps the device in
reset mode until the VCC rises above the Power-on Reset threshold value (VPOR). At this time, all
operations are disabled and the device does not respond to any commands. After power up is
applied and the VCC is at the minimum operating voltage VCC (min.), the tVCSL delay is required
before the device can be selected in order to perform a read operation.
Similarly, the tPUW delay is required after the VCC rises above the Power-on Reset threshold
value (VPOR) before the device can perform a write (Program or Erase) operation. After initial
power-up, the device will default in Standby mode.
Symbol
Parameter
tVCSL
VCC (min.) to Chip Select low
tPUW
Power-Up Device Delay before Write Allowed
VPOR
Power-ON Reset Voltage
Min
Typ
Max
70
1.5
Units
µs
20
ms
2.5
V
17. System Considerations
The RapidS serial interface is controlled by the clock SCK, serial input SI and chip select CS
pins. These signals must rise and fall monotonically and be free from noise. Excessive noise or
ringing on these pins can be misinterpreted as multiple edges and cause improper operation of
the device. The PC board traces must be kept to a minimum distance or appropriately terminated to ensure proper operation. If necessary, decoupling capacitors can be added on these
pins to provide filtering against noise glitches.
As system complexity continues to increase, voltage regulation is becoming more important. A
key element of any voltage regulation scheme is its current sourcing capability. Like all Flash
memories, the peak current for DataFlash occur during the programming and erase operation.
The regulator needs to supply this peak current requirement. An under specified regulator can
cause current starvation. Besides increasing system noise, current starvation during programming or erase can lead to improper operation and possible data corruption.
32
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
18. Electrical Specifications
Table 18-1.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (except VCC but including NC pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Table 18-2.
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. The "Absolute Maximum Ratings" are stress ratings only and functional
operation of the device at these or any other conditions beyond those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Voltage Extremes referenced in the "Absolute
Maximum Ratings" are intended to accommodate short duration undershoot/overshoot conditions and does not imply or guarantee functional
device operation at these levels for any extended
period of time
DC and AC Operating Range
AT45DB321D
Operating Temperature (Case)
VCC Power Supply
Ind.
-40°C to 85°C
2.7V to 3.6V
33
3597N–DFLASH–04/09
Table 18-3.
DC Characteristics
Symbol
Parameter
Condition
IDP
Deep Power-down Current
ISB
Standby Current
ICC1(1)
Active Current, Read
Operation
Min
Typ
Max
Units
CS, RESET, WP = VIH, all
inputs at CMOS levels
15
25
µA
CS, RESET, WP = VIH, all
inputs at CMOS levels
25
50
µA
f = 20 MHz; IOUT = 0 mA;
VCC = 3.6V
7
10
mA
f = 33 MHz; IOUT = 0 mA;
VCC = 3.6V
8
12
mA
f = 50 MHz; IOUT = 0 mA;
VCC = 3.6V
10
14
mA
f = 66 MHz; IOUT = 0 mA;
VCC = 3.6V
11
15
mA
12
17
mA
ICC2
Active Current, Program/Erase
Operation
VCC = 3.6V
ILI
Input Load Current
VIN = CMOS levels
1
µA
ILO
Output Leakage Current
VI/O = CMOS levels
1
µA
VIL
Input Low Voltage
VCC x 0.3
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA; VCC = 2.7V
VOH
Output High Voltage
IOH = -100 µA
Notes:
VCC x 0.7
V
0.4
VCC - 0.2V
V
V
1. ICC1 during a buffer read is 20 mA maximum @ 20 MHz.
2. All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5-Volt tolerant.
34
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
Table 18-4.
AC Characteristics – RapidS/Serial Interface
AT45DB321D
Symbol
Parameter
fSCK
Max
Units
SCK Frequency
66
MHz
fCAR1
SCK Frequency for Continuous Array Read
66
MHz
fCAR2
SCK Frequency for Continuous Array Read
(Low Frequency)
33
MHz
tWH
SCK High Time
6.8
ns
SCK Low Time
6.8
ns
tWL
(1)
Min
Typ
SCK Rise Time, Peak-to-Peak (Slew Rate)
0.1
V/ns
tSCKF(1)
SCK Fall Time, Peak-to-Peak (Slew Rate)
0.1
V/ns
tCS
Minimum CS High Time
50
ns
tCSS
CS Setup Time
5
ns
tCSH
CS Hold Time
5
ns
tCSB
CS High to RDY/BUSY Low
tSU
Data In Setup Time
2
ns
tH
Data In Hold Time
3
ns
tHO
Output Hold Time
0
ns
tDIS
Output Disable Time
tV
tSCKR
100
27
ns
35
ns
Output Valid
6
ns
tWPE
WP Low to Protection Enabled
1
µs
tWPD
WP High to Protection Disabled
1
µs
tEDPD
CS High to Deep Power-down Mode
3
µs
tRDPD
CS High to Standby Mode
35
µs
tXFR
Page to Buffer Transfer Time
200
µs
tcomp
Page to Buffer Compare Time
200
µs
tEP
Page Erase and Programming Time (512/528 bytes)
17
40
ms
tP
Page Programming Time (512/528 bytes)
3
6
ms
tPE
Page Erase Time (512/528 bytes)
15
35
ms
tBE
Block Erase Time (4,096/4,224 bytes)
45
100
ms
tCE
Chip Erase Time
TBD
TBD
s
tSE
Sector Erase Time (262,144/270,336 bytes)
1.6
5
s
tRST
RESET Pulse Width
tREC
RESET Recovery Time
10
µs
1
µs
35
3597N–DFLASH–04/09
19. Input Test Waveforms and Measurement Levels
AC
DRIVING
LEVELS
2.4V
1.5V
0.45V
AC
MEASUREMENT
LEVEL
tR, tF < 2 ns (10% to 90%)
20. Output Test Load
DEVICE
UNDER
TEST
30 pF
21. AC Waveforms
Six different timing waveforms are shown on page 37. Waveform 1 shows the SCK signal being
low when CS makes a high-to-low transition, and waveform 2 shows the SCK signal being high
when CS makes a high-to-low transition. In both cases, output SO becomes valid while the
SCK signal is still low (SCK low time is specified as tWL). Timing waveforms 1 and 2 conform to
RapidS serial interface but for frequencies up to 66 MHz. Waveforms 1 and 2 are compatible
with SPI Mode 0 and SPI Mode 3, respectively.
Waveform 3 and waveform 4 illustrate general timing diagram for RapidS serial interface. These
are similar to waveform 1 and waveform 2, except that output SO is not restricted to become
valid during the tWL period. These timing waveforms are valid over the full frequency range (maximum frequency = 66 MHz) of the RapidS serial case.
36
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
21.1
Waveform 1 – SPI Mode 0 Compatible (for frequencies up to 66 MHz)
tCS
CS
tWH
tCSS
tWL
tCSH
SCK
tHO
tV
SO
HIGH IMPEDANCE
VALID OUT
tSU
SI
21.2
tDIS
HIGH IMPEDANCE
tH
VALID IN
Waveform 2 – SPI Mode 3 Compatible (for frequencies up to 66 MHz)
tCS
CS
tCSS
tWL
tWH
tCSH
SCK
tV
SO
tHO
HIGH Z
VALID OUT
tSU
tH
VALID IN
SI
21.3
tDIS
HIGH IMPEDANCE
Waveform 3 – RapidS Mode 0 (FMAX = 66 MHz)
tCS
CS
tWH
tCSS
tWL
tCSH
SCK
tHO
tV
SO
HIGH IMPEDANCE
VALID OUT
tSU
HIGH IMPEDANCE
tH
VALID IN
SI
21.4
tDIS
Waveform 4 – RapidS Mode 3 (FMAX = 66 MHz)
tCS
CS
tCSS
tWL
tWH
tCSH
SCK
tV
SO
HIGH Z
tHO
VALID OUT
tSU
SI
tDIS
HIGH IMPEDANCE
tH
VALID IN
37
3597N–DFLASH–04/09
21.5
Utilizing the RapidS™ Function
To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full
clock cycle must be used to transmit data back and forth across the serial bus. The DataFlash is
designed to always clock its data out on the falling edge of the SCK signal and clock data in on
the rising edge of SCK.
For full clock cycle operation to be achieved, when the DataFlash is clocking data out on the falling edge of SCK, the host controller should wait until the next falling edge of SCK to latch the
data in. Similarly, the host controller should clock its data out on the rising edge of SCK in order
to give the DataFlash a full clock cycle to latch the incoming data in on the next rising edge of
SCK.
Figure 21-1. RapidS Mode
Slave CS
1
8
2
3
4
5
6
1
1
8
7
2
3
4
5
6
7
SCK
B
A
MOSI
E
C
D
MSB
LSB
BYTE-MOSI
H
I
G
F
MISO
MSB
LSB
BYTE-SO
MOSI = Master Out, Slave In
MISO = Master In, Slave Out
The Master is the host controller and the Slave is the DataFlash
The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK.
The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK.
A.
B.
C.
D.
E.
F.
G.
H.
I.
38
Master clocks out first bit of BYTE-MOSI on the rising edge of SCK.
Slave clocks in first bit of BYTE-MOSI on the next rising edge of SCK.
Master clocks out second bit of BYTE-MOSI on the same rising edge of SCK.
Last bit of BYTE-MOSI is clocked out from the Master.
Last bit of BYTE-MOSI is clocked into the slave.
Slave clocks out first bit of BYTE-SO.
Master clocks in first bit of BYTE-SO.
Slave clocks out second bit of BYTE-SO.
Master clocks in last bit of BYTE-SO.
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
21.6
Reset Timing
CS
tREC
tCSS
SCK
tRST
RESET
HIGH IMPEDANCE
SO (OUTPUT)
HIGH IMPEDANCE
SI (INPUT)
Note:
The CS signal should be in the high state before the RESET signal is deasserted.
21.7
Command Sequence for Read/Write Operations for Page Size 512 Bytes (Except Status
Register Read, Manufacturer and Device ID Read)
SI (INPUT)
MSB
CMD
XX
8 bits
8 bits
XXXX XXXX
XXXXX XXXXXXXXX
Don’t Care
Bits
21.8
8 bits
Page Address
(A21 - A9)
LSB
Byte/Buffer Address
(A8 - A0/BFA8 - BFA0)
Command Sequence for Read/Write Operations for Page Size 528 Bytes (Except Status
Register Read, Manufacturer and Device ID Read)
SI (INPUT)
MSB
CMD
8 bits
8 bits
8 bits
X X X XX X X X X X X X X X X X
1 Don’t Care Page Address
Bit
(PA12 - PA0)
XXXX XXXX
LSB
Byte/Buffer Address
(BA9 - BA0/BFA9 - BFA0)
39
3597N–DFLASH–04/09
22. Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (512/528 BYTES)
BUFFER 1 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 2 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 1 (512/528 BYTES)
BUFFER 2 (512/528 BYTES)
BUFFER 2
WRITE
BUFFER 1
WRITE
I/O INTERFACE
SI
22.1
Buffer Write
Completes writing into selected buffer
CS
BINARY PAGE SIZE
15 DON'T CARE + BFA8-BFA0
SI (INPUT)
22.2
CMD
X
X···X, BFA9-8
BFA7-0
n
n+1
Last Byte
Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
Starts self-timed erase/program operation
CS
BINARY PAGE SIZE
A21-A9 + 9 DON'T CARE BITS
SI (INPUT)
CMD
Each transition
represents 8 bits
40
PA12-6
PA5-0, XX
XXXX XX
n = 1st byte read
n+1 = 2nd byte read
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
23. Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
FLASH MEMORY ARRAY
PAGE (512/528 BYTES)
MAIN MEMORY
PAGE TO
BUFFER 2
MAIN MEMORY
PAGE TO
BUFFER 1
BUFFER 1 (512/528 BYTES)
BUFFER 2 (512/528 BYTES)
BUFFER 1
READ
MAIN MEMORY
PAGE READ
BUFFER 2
READ
I/O INTERFACE
SO
23.1
Main Memory Page Read
CS
ADDRESS FOR BINARY PAGE SIZE
A15-A8
A21-A16
A7-A0
SI (INPUT)
CMD
PA12-6
PA5-0, BA9-8
BA7-0
X
X
4 Dummy Bytes
SO (OUTPUT)
23.2
n
n+1
Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)
Starts reading page data into buffer
CS
BINARY PAGE SIZE
A21-A9 + 9 DON'T CARE BITS
SI (INPUT)
CMD
PA12-6
PA5-0, XX
XXXX XXXX
SO (OUTPUT)
41
3597N–DFLASH–04/09
23.3
Buffer Read
CS
BINARY PAGE SIZE
15 DON'T CARE + BFA8-BFA0
SI (INPUT)
CMD
X
X
BFA7- 0
X..X, BFA9-8
No Dummy Byte (opcodes D1H and D3H)
1 Dummy Byte (opcodes D4H and D6H)
SO (OUTPUT)
n
n+1
Each transition
represents 8 bits
24. Detailed Bit-level Read Waveform – RapidS Serial Interface Mode 0/Mode 3
24.1
Continuous Array Read (Legacy Opcode E8H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34
62 63 64 65 66 67 68 69 70 71 72
SCK
OPCODE
SI
1
1
1
0
1
ADDRESS BITS
0
0
0
MSB
A
A
A
A
A
A
32 DON'T CARE BITS
A
A
A
MSB
X
X
X
X
X
X
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
MSB
D
BIT 0 OF
PAGE n+1
BIT 4095/4223
OF PAGE n
24.2
D
MSB
Continuous Array Read (Opcode 0BH)
CS
0
1
2
3
4
5
6
7
8
9
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
10 11 12
SCK
OPCODE
SI
0
0
0
0
1
ADDRESS BITS A21 - A0
0
1
MSB
1
A
MSB
A
A
A
A
A
A
DON'T CARE
A
A
X
X
X
X
X
X
X
X
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
MSB
42
D
D
D
D
D
D
D
D
D
MSB
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
24.3
Continuous Array Read (Low Frequency: Opcode 03H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
OPCODE
SI
0
0
0
0
0
ADDRESS BITS A21-A0
0
1
1
MSB
A
A
A
A
A
A
A
A
A
MSB
DATA BYTE 1
HIGH-IMPEDANCE
SO
D
D
D
D
D
D
D
D
MSB
24.4
D
D
MSB
Main Memory Page Read (Opcode: D2H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34
62 63 64 65 66 67 68 69 70 71 72
SCK
OPCODE
SI
1
1
0
1
0
ADDRESS BITS
0
1
0
A
MSB
A
A
A
A
A
32 DON'T CARE BITS
A
A
A
MSB
X
X
X
X
X
X
MSB
DATA BYTE 1
HIGH-IMPEDANCE
SO
D
D
D
D
D
D
D
D
MSB
24.5
D
D
MSB
Buffer Read (Opcode D4H or D6H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
SCK
ADDRESS BITS
BINARY PAGE SIZE = 15 DON'T CARE + BFA8-BFA0
STANDARD DATAFLASH PAGE SIZE =
14 DON'T CARE + BFA9-BFA0
OPCODE
SI
1
1
0
1
0
1
MSB
0
0
X
MSB
X
X
X
X
X
A
A
A
X
DON'T CARE
X
X
X
X
X
X
X
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
MSB
D
D
D
D
D
D
D
D
D
MSB
43
3597N–DFLASH–04/09
24.6
Buffer Read (Low Frequency: Opcode D1H or D3H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
ADDRESS BITS
BINARY PAGE SIZE = 15 DON'T CARE + BFA8-BFA0
STANDARD DATAFLASH PAGE SIZE =
14 DON'T CARE + BFA9-BFA0
OPCODE
SI
1
1
0
1
0
0
0
1
MSB
X
X
X
X
X
X
A
A
A
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
MSB
24.7
D
D
MSB
Read Sector Protection Register (Opcode 32H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
OPCODE
SI
0
0
1
1
0
DON'T CARE
0
1
0
MSB
X
X
X
X
X
X
X
X
X
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
MSB
24.8
D
MSB
Read Sector Lockdown Register (Opcode 35H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
OPCODE
SI
0
0
1
1
0
DON'T CARE
1
MSB
0
1
X
X
X
X
X
X
X
X
X
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
MSB
44
D
D
D
D
D
D
D
D
MSB
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
24.9
Read Security Register (Opcode 77H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
OPCODE
SI
0
1
1
1
0
DON'T CARE
1
1
1
MSB
X
X
X
X
X
X
X
X
X
MSB
DATA BYTE 1
HIGH-IMPEDANCE
SO
D
D
D
D
D
D
D
D
MSB
D
MSB
24.10 Status Register Read (Opcode D7H)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
SCK
OPCODE
SI
1
1
0
1
0
1
1
1
MSB
STATUS REGISTER DATA
SO
HIGH-IMPEDANCE
D
D
D
D
D
D
D
MSB
STATUS REGISTER DATA
D
D
D
D
D
D
D
D
D
MSB
D
D
MSB
24.11 Manufacturer and Device Read (Opcode 9FH)
CS
0
6
7
8
14 15 16
22 23 24
30 31 32
38
SCK
OPCODE
SI
SO
9FH
HIGH-IMPEDANCE
Note: Each transition
1FH
DEVICE ID BYTE 1
DEVICE ID BYTE 2
00H
shown for SI and SO represents one byte (8 bits)
45
3597N–DFLASH–04/09
25. Auto Page Rewrite Flowchart
Figure 25-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
START
provide address
and data
BUFFER WRITE
(84H, 87H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
END
Notes:
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-bypage.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
46
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
Figure 25-2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAIN MEMORY PAGE
TO BUFFER TRANSFER
(53H, 55H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
BUFFER WRITE
(84H, 87H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
(2)
AUTO PAGE REWRITE
(58H, 59H)
INCREMENT PAGE
(2)
ADDRESS POINTER
END
Notes:
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase and program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
47
3597N–DFLASH–04/09
26. Ordering Information
26.1
Ordering Code Detail
A T 4 5DB 3 2 1D– S SU
Atmel Designator
Product Family
Device Grade
U = Matte Sn lead finish, industrial
temperature range (-40°C to +85°C)
Device Density
32 = 32-megabit
Interface
Package Option
M
MW
S
T
C
=
=
=
=
=
8-pad, 6 x 5 x 1 mm MLF (VDFN)
8-pad, 8 x 6 x 1 mm MLF (VDFN)
8-lead, 0.209" wide SOIC
28-lead, TSOP
24 Ball BGA
1 = Serial
Device Revision
48
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
26.2
Green Package Options (Pb/Halide-free/RoHS Compliant)
Ordering Code(1)(2)
AT45DB321D-MU
AT45DB321D-MU-SL954(3)
AT45DB321D-MU-SL955(4)
AT45DB321D-MWU
AT45DB321D-MWU-SL954(3)
AT45DB321D-MWU-SL955(4)
AT45DB321D-SU
AT45DB321D-SU-SL954(3)
AT45DB321D-SU-SL955(4)
AT45DB321D-TU
AT45DB321D-CU
Notes:
Package
Lead Finish
Operating Voltage
fSCK (MHz)
Matte Sn
2.7V to 3.6V
66
Matte Sn
2.7V to 3.6V
66
Operation Range
8M1-A
8MW
Industrial
(-40°C to 85°C)
2.7V to 3.6V
8S2
28T
24C1
1. The shipping carrier option is not marked on the devices.
2. Standard parts are shipped with the page size set to 528 bytes. The user is able to configure these parts to a 512-byte page
size if desired.
3. Parts ordered with suffix SL954 are shipped in bulk with the page size set to 512 bytes. Parts will have a 954 or SL954
marked on them.
4. Parts ordered with suffix SL955 are shipped in tape and reel with the page size set to 512 bytes. Parts will have a 954 or
SL954 marked on them.
Package Type
8M1-A
8-pad, 6 x 5 x 1.0 mm, Very Thin Micro Lead-frame Package MLF™ (VDFN)
8MW
8-pad, 8 x 6 x 1.0 mm, Very Thin Micro Lead-frame Package MLF (VDFN)
8S2
8-lead, 0.209" wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
28T
28-lead, 8 mm x 13.4 mm, Plastic Thin Small Outline Package, Type I (TSOP)
24C1
24-Ball, 6mm x 8mm x 1,4mm Ball Grid Array with a 1mm pitch 5 x 5 Ball Matrix
49
3597N–DFLASH–04/09
27. Packaging Information
27.1
8M1-A – MLF (VDFN)
D
D1
0
Pin 1 ID
E
E1
SIDE VIEW
TOP VIEW
A3
A2
A1
A
0.08 C
Pin #1 Notch
(0.20 R)
e
COMMON DIMENSIONS
(Unit of Measure = mm)
0.45
D2
E2
b
L
K
BOTTOM VIEW
SYMBOL
MIN
NOM
MAX
A
–
0.85
1.00
A1
–
–
0.05
A2
0.65 TYP
A3
0.20 TYP
b
0.35
0.40
0.48
D
5.90
6.00
6.10
D1
5.70
5.75
5.80
D2
3.20
3.40
3.60
E
4.90
5.00
5.10
E1
4.70
4.75
4.80
E2
3.80
4.00
4.20
e
NOTE
1.27
L
0.50
0.60
0.75
0
–
–
12o
K
0.25
–
–
8/28/08
Package Drawing Contact:
[email protected]
50
TITLE
8M1-A, 8-pad, 6 x 5 x 1.00 mm Body, Thermally
Enhanced Plastic Very Thin Dual Flat No
Lead Package (VDFN)
GPC
YBR
DRAWING NO.
8M1-A
REV.
D
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
27.2
8MW – MLF (VDFN)
D
Pin 1 ID
SIDE VIEW
E
A1
TOP VIEW
A
D1
Pin #1 ID
COMMON DIMENSIONS
(Unit of Measure = mm)
1
Option A
Pin #1
Chamfer
(C 0.30)
E1
e
Option B
b
L
K
BOTTOM VIEW
Pin #1
Notch
(0.20 R)
SYMBOL
MIN
NOM
MAX
A
–
–
1.00
A1
–
–
0.05
b
0.35
0.40
0.48
D
7.90
8.00
8.10
D1
6.30
6.40
6.50
E
5.90
6.00
6.10
E1
4.70
4.80
4.90
e
L
NOTE
1.27
0.45
K
0.50
0.55
0.30 REF
5/25/06
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8MW, 8-pad, 8 x 6 x 1.0 mm Body, Very Thin Dual Flat Package
No Lead (MLF)
DRAWING NO.
REV.
8MW
B
51
3597N–DFLASH–04/09
27.3
8S2 – EIAJ SOIC
C
1
E
E1
L
N
θ
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
A1
D
SIDE VIEW
NOTE
1.70
2.16
A1
0.05
0.25
b
0.35
0.48
4
C
0.15
0.35
4
D
5.13
5.35
E1
5.18
5.40
E
7.70
8.26
L
0.51
0.85
θ
0°
2
8°
1.27 BSC
3
This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs aren't included.
Determines the true geometric position.
Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
Package Drawing Contact:
[email protected]
52
MAX
NOM
A
e
Notes: 1.
2.
3.
4.
MIN
TITLE
8S2, 8-lead, 0.208” Body, Plastic Small
Outline Package (EIAJ)
GPC
STN
4/15/08
DRAWING NO. REV.
8S2
F
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
27.4
28T – TSOP, Type 1
PIN 1
0º ~ 5º
c
Pin 1 Identifier Area
D1 D
L
b
e
L1
A2
E
A
GAGE PLANE
SEATING PLANE
COMMON DIMENSIONS
(Unit of Measure = mm)
A1
MIN
NOM
MAX
A
–
–
1.20
A1
0.05
–
0.15
A2
0.90
1.00
1.05
D
13.20
13.40
13.60
D1
11.70
11.80
11.90
Note 2
E
7.90
8.00
8.10
Note 2
L
0.50
0.60
0.70
SYMBOL
Notes:
1. This package conforms to JEDEC reference MO-183.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
L1
NOTE
0.25 BASIC
b
0.17
0.22
0.27
c
0.10
–
0.21
e
0.55 BASIC
12/06/02
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline
Package, Type I (TSOP)
DRAWING NO.
REV.
28T
C
53
3597N–DFLASH–04/09
27.5
24C1 - Ball Grid Array
Dimensions in Millimeters and (Inches).
Controlling dimension: Millimeters.
6.10(0.240)
5.90(0.232)
A1 ID
8.10(0.319)
7.90(0.311)
SIDE VIEW
0.30 (0.012)MIN
TOP VIEW
1.40 (0.055) MAX
1.00 (0.039) REF
4.0 (0.157)
5
4
3
2
1
2.00 (0.079) REF
A
B
1.00 (0.0394) BSC
NON-ACCUMULATIVE
4.0 (0.157)
C
D
E
0.46 (0.018)
DIA BALL TYP
1.00 (0.0394) BSC
NON-ACCUMULATIVE
BOTTOM VIEW
04/11/01
R
54
2325 Orchard Parkway
San Jose, CA 95131
TITLE
24C1, 24-ball (5 x 5 Array), 6 x 8 x 1.4 mm Body, 1.0 mm Ball
Pitch Chip-scale Ball Grid Array Package (CBGA)
DRAWING NO.
24C1
REV.
A
AT45DB321D
3597N–DFLASH–04/09
AT45DB321D
28. Revision History
Revision Level – Release Date
History
A – November 2005
Initial Release
B – January 2006
Added 6 x 5 mm MLF (VDFN) package.
Added text, in “Programming the Configuration Register”, to indicate
that power cycling is required to switch to “power of 2” page size
after the opcode enable has been executed.
Corrected typographical error regarding the opcode for chip erase in
“Program and Erase Commands” table.
C – March 2006
Added Preliminary.
Changed the sector size from 256K bytes to 64K bytes.
Added the “Legacy Commands” table.
D – April 2006
Added 8 x 6 mm MLF (VDFN) package.
Changed the sector size of 0a and 0b to 8 pages and 120 pages
respectively.
Changed the Product Version Code to 00001.
E – July 2006
Corrected typographical errors.
F – August 2006
Added errata regarding Chip Erase.
Added AT45DB321D-SU to ordering information and corresponding
8S2 package.
G – September 2006
Removed “not recommended for new designs” note from ordering
information for 8MW package.
H – February 2007
Added AT45DB321D-CNU to ordering information and
corresponding 8CN3 package.
Removed “not recommended for new designs” comment from 8MW
package drawing.
I – August 2007
Added additional text to “power of 2” binary page size option.
Changed tVSCL from 50 µs to 70 µs.
Changed tRDPD from 30 µs to 35 µs.
Changed tXFR and tCOMP values from 400 µs to 200 µs.
Removed AT45DB321D-CNU from ordering information and
corresponding 8CN3 package.
J – April 2008
Added part number ordering code details for suffixes SL954/955.
Added ordering code details.
K – September 2008
Corrected typographical errors in Sector Erase section.
Corrected A17+A16 from x (Don’t Care) to A for opcode 7Ch in
Table 15-6.
Corrected PA8+PA7 from x (Don’t Care) to P for opcode 7Ch in
Table 15-7.
55
3597N–DFLASH–04/09
Revision Level – Release Date
History
L – February 2009
Changed tDIS (Typ and Max) to 27 ns and 35 ns, respectively.
M – March 2009
Changed Deep Power-Down Current values
- Increased typical value from 5 µA to 15 µA.
- Increased maximum value from 15 µA to 25 µA.
N - April 2009
Updated Absolute Maximum Ratings
Added 24C1 24 Ball BGA package Option
Deleted DataFlash Card Package Option
29. Errata
29.1
29.1.1
Chip Erase
Issue
In a certain percentage of units, the Chip Erase feature may not function correctly and may
adversely affect device operation. Therefore, it is recommended that the Chip Erase commands
(opcodes C7H, 94H, 80H, and 9AH) not be used.
29.1.2
Workaround
Use Block Erase (opcode 50H) as an alternative. The Block Erase function is not affected by the
Chip Erase issue.
29.1.3
Resolution
The Chip Erase feature may be fixed with a new revision of the device. Please contact Atmel for
the estimated availability of devices with the fix.
56
AT45DB321D
3597N–DFLASH–04/09
Headquarters
International
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Atmel Asia
Unit 1-5 & 16, 19/F
BEA Tower, Millennium City 5
418 Kwun Tong Road
Kwun Tong, Kowloon
Hong Kong
Tel: (852) 2245-6100
Fax: (852) 2722-1369
Atmel Europe
Le Krebs
8, Rue Jean-Pierre Timbaud
BP 309
78054 Saint-Quentin-enYvelines Cedex
France
Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Atmel Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Technical Support
[email protected]
Sales Contact
www.atmel.com/contacts
Product Contact
Web Site
www.atmel.com
Literature Requests
www.atmel.com/literature
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logo and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.
3597N–DFLASH–04/09