BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode www.onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s Symbol Value Unit VR 250 Vdc VRRM 250 Vdc IF 200 mAdc IFRM 500 mA IFSM(surge) 625 mAdc IFSM JS M G G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C 635 °C/W RqJA TJ, Tstg °C −55 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad June, 2016 − Rev. 11 SOD−323 CASE 477 STYLE 1 1 *Date Code orientation may vary depending upon manufacturing location. Symbol © Semiconductor Components Industries, LLC, 2016 MARKING DIAGRAM 2 JS M G 20 20 10 4 1 Characteristic Junction and Storage Temperature Range 2 ANODE A THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient 1 CATHODE 1 ORDERING INFORMATION Device Package Shipping† BAS21HT1G, NSVBAS21HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel BAS21HT3G, NSVBAS21HT3G SOD−323 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAS21HT1/D BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − 0.1 100 250 − − − 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) mAdc IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G TYPICAL CHARACTERISTICS 1200 1000 25°C REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) TA = −55°C 800 155°C 600 400 200 7000 6000 5000 4000 3000 6 5 4 3 2 TA = 25°C 1 0 1 1 10 100 TA = −55°C 1 1000 2 5 10 20 50 100 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 200 300 25 1.0 Based on square wave currents TJ = 25°C prior to surge 0.9 20 0.8 0.7 IFSM (A) Cd, DIODE CAPACITANCE (pF) TA = 155°C 0.6 15 10 0.5 5 0.4 0.3 0 1 2 3 4 5 6 7 0 8 0.001 0.01 0.1 1 VR, REVERSE VOLTAGE (V) Tp (mSec) Figure 4. Diode Capacitance Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values www.onsemi.com 3 10 BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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