BTB16-600CW3G, BTB16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features •Blocking Voltage to 800 V •On‐State Current Rating of 16 A RMS at 25°C •Uniform Gate Trigger Currents in Three Quadrants •High Immunity to dV/dt - 1000 V/ms minimum at 125°C •Minimizes Snubber Networks for Protection •Industry Standard TO‐220AB Package •High Commutating dI/dt - 6.0 A/ms minimum at 125°C •These are Pb-Free Devices TRIACS 16 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G 4 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB16-600CW3G BTB16-800CW3G VDRM, VRRM On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT(RMS) 16 A ITSM 170 A I2t 144 A2sec VDSM/ VRSM VDSM/VRSM +100 V Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) PG(AV) 1.0 Operating Junction Temperature Range TJ Storage Temperature Range Tstg Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Value Unit V 600 800 1 2 BTB16-xCWG AYWW TO-220AB CASE 221A STYLE 4 3 x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 W 3 Gate -40 to +125 °C 4 Main Terminal 2 -40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device Package Shipping BTB16-600CW3G TO-220AB (Pb-Free) 50 Units / Rail BTB16-800CW3G TO-220AB (Pb-Free) 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semicon‐ ductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 February, 2008 - Rev. 1 1 Publication Order Number: BTB16-600CW3/D BTB16-600CW3G, BTB16-800CW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds Symbol Value Unit RqJC RqJA 2.1 60 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 0.005 2.0 - - 1.55 2.0 2.0 2.0 - 35 35 35 - - 50 - - 60 65 60 0.5 0.5 0.5 - 1.7 1.1 1.1 0.2 0.2 0.2 - - (dI/dt)c 6.0 - - A/ms Critical Rate of Rise of On-State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt - - 50 A/ms Critical Rate of Rise of Off‐State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 1000 - - V/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM/ IRRM mA ON CHARACTERISTICS Peak On‐State Voltage (Note 2) (ITM = ±22.5 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±500 mA) IH Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IL Gate Trigger Voltage (VD = 12 V, RL = 33 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGT Gate Non-Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGD V mA mA mA V V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 BTB16-600CW3G, BTB16-800CW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 - VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF IGT - + IGT (-) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (-) MT2 Quadrant IV (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM BTB16-600CW3G, BTB16-800CW3G 125 24 22 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) 120 30° 60° 90° 115 110 105 100 120° 95 180° 90 DC 85 80 75 70 0 2 4 6 8 10 12 IT(RMS), RMS ON‐STATE CURRENT (AMP) 14 120° 16 14 12 10 8 90° 6 60° 4 2 0 16 DC 180° 20 18 30° 0 100 MAXIMUM @ TJ = 125°C 10 16 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 1·104 Figure 4. Thermal Response 40 MAXIMUM @ TJ = 25°C 35 1 0.1 IH, HOLD CURRENT (mA) I T, INSTANTANEOUS ON‐STATE CURRENT (AMP) TYPICAL AT TJ = 25°C 4 6 8 10 12 14 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) Figure 2. On‐State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Typical RMS Current Derating 2 30 MT2 POSITIVE 25 20 MT2 NEGATIVE 15 10 5 -40 -25 -10 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON‐STATE VOLTAGE (V) 5 20 35 50 65 80 95 110 125 4 TJ, JUNCTION TEMPERATURE (°C) Figure 3. On‐State Characteristics Figure 5. Typical Hold Current Variation http://onsemi.com 4 BTB16-600CW3G, BTB16-800CW3G 1.6 VD = 12 V RL = 30 W Q3 VGT, GATE TRIGGER VOLTAGE (V) IGT, GATE TRIGGER VOLTAGE (mA) 100 Q1 Q2 10 1 Q3 0.8 0.4 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 125 110 125 Figure 7. Typical Gate Trigger Voltage Variation 100 5000 4K (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/μ s) VD = 800 Vpk TJ = 125°C 3K 2K 1K 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) TJ = 125°C 10000 75°C ITM tw VDRM f= 1 2 tw (di/dt)c = 6f ITM 1000 20 30 40 50 60 70 80 90 100 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 9. Critical Rate of Rise of Commutating Voltage Figure 8. Critical Rate of Rise of Off‐State Voltage (Exponential Waveform) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 100°C 10 1 10 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON‐POLAR CL TRIGGER CONTROL dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ μ s) Q2 0.6 Figure 6. Typical Gate Trigger Current Variation 0 Q1 1.2 1 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) VD = 12 V RL = 30 W 1.4 + 200 V MT2 1N914 51 W MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 BTB16-600CW3G, BTB16-800CW3G PACKAGE DIMENSIONS TO-220 CASE 221A-07 ISSUE AA -TB F T SEATING PLANE C S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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