Diode Semiconductor Korea ERB43-02---EB43-04 FAST RECOVERY RECT IFIERS VOLT AGE RANGE: 200 --- 400 V CURRENT : 0.5 A FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop DO - 41 High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V -0 MECHANICAL DATA Cas e:JEDEC DO-41,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces ,0.34 gram s Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECT RICAL CHARACTERIST ICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. ERB43-02 ERB43-04 UNITS Maximum recurrent peak reverse voltage VRRM 200 400 V Maximum RMS voltage V R MS 140 280 V Maximum DC blocking voltage VDC 200 400 V Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 IF (AV) 0.5 A IF SM 20.0 A VF 1.2 V Peak f orw ard surge current 8.3ms s ingle half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 0.5 A Maximum revers e current at rated DC blocking v oltage @TA =25 @TA =100 IR 5.0 100.0 A Maximum revers e recovery time (Note1) t rr 400 ns Typical junction capacitance (Note2) CJ 12 pF Typical thermal resistance (Note3) Rθ JA 55 TJ -55----+150 TSTG -55----+150 Operating junction temperature range Storage temperature range /W N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al resistance f rom junction to am bient. www.diode.kr Diode Semiconductor Korea ERB43-02---ERB43-04 FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 10 N.1. 50 N.1. +0.5A D.U.T. ( - ) 0 (+) 50VDC (APPROX) (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC 100 10 TJ=25 Pulse Width=300 µS 4 2 1 .0 0 .4 0 .2 0 .1 0 .0 6 0 .0 4 0 .0 2 0 .0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.7 0.6 0.5 0.4 0.2 0.1 0 0 14 12 10 TJ=25 f=1MHz 2 1.0 2 4 10 REVERSE VOLTAGE,VOLTS 20 40 100 PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF 10 .4 40 60 80 100 140 150 120 FIG.5--PEAK FORWARD SURGE CURRENT 16 .2 20 AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE 1 .1 S ing le P hase H alf W ave 60 H z R esistive or Inductive Load 0.3 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 4 1cm SET TIMEBASEFOR 50/100 ns /cm 20 TJ =125 8.3ms Single Half Sine-Wave 15 10 5 0 1 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60 Hz www.diode.kr