DSK ERB43-02 Fast recovery rectifier Datasheet

Diode Semiconductor Korea ERB43-02---EB43-04
FAST RECOVERY RECT IFIERS
VOLT AGE RANGE: 200 --- 400 V
CURRENT : 0.5 A
FEATURES
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
DO - 41
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V -0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Dimensions in millimeters
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECT RICAL CHARACTERIST ICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
ERB43-02
ERB43-04
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
V
Maximum RMS voltage
V R MS
140
280
V
Maximum DC blocking voltage
VDC
200
400
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@TA =75
IF (AV)
0.5
A
IF SM
20.0
A
VF
1.2
V
Peak f orw ard surge current
8.3ms s ingle half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous f orw ard voltage
@ 0.5 A
Maximum revers e current
at rated DC blocking v oltage
@TA =25
@TA =100
IR
5.0
100.0
A
Maximum revers e recovery time (Note1)
t rr
400
ns
Typical junction capacitance
(Note2)
CJ
12
pF
Typical thermal resistance
(Note3)
Rθ JA
55
TJ
-55----+150
TSTG
-55----+150
Operating junction temperature range
Storage temperature range
/W
N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
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Diode Semiconductor Korea
ERB43-02---ERB43-04
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
0
(+)
50VDC
(APPROX)
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
100
10
TJ=25
Pulse Width=300 µS
4
2
1 .0
0 .4
0 .2
0 .1
0 .0 6
0 .0 4
0 .0 2
0 .0 1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.7
0.6
0.5
0.4
0.2
0.1
0
0
14
12
10
TJ=25
f=1MHz
2
1.0
2
4
10
REVERSE VOLTAGE,VOLTS
20
40
100
PEAK FORWARD SURGE CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
10
.4
40
60
80
100
140 150
120
FIG.5--PEAK FORWARD SURGE CURRENT
16
.2
20
AMBIENT TEMPERATURE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
1
.1
S ing le P hase
H alf W ave 60 H z
R esistive or
Inductive Load
0.3
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
4
1cm
SET TIMEBASEFOR 50/100 ns /cm
20
TJ =125
8.3ms Single Half
Sine-Wave
15
10
5
0
1
2
4
8 10
20
40
60 80 100
NUMBER OF CYCLES AT 60 Hz
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