APT8024B2LL
APT8024LLL
800V 31A 0.240Ω
POWER MOS 7
R
MOSFET
B2LL
®
T-MAX™
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
LLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
TO-264
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8024B2LL_LLL
UNIT
800
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
565
Watts
Linear Derating Factor
4.52
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
124
TL
EAS
31
-55 to 150
°C
300
Amps
31
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 15.5A)
TYP
MAX
Volts
0.240
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
9-2004
Characteristic / Test Conditions
050-7073 Rev B
Symbol
DYNAMIC CHARACTERISTICS
APT8024B2LL_LLL
Test Conditions
Characteristic
Symbol
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
860
Crss
Reverse Transfer Capacitance
f = 1 MHz
155
VGS = 10V
160
VDD = 400V
24
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
ID = 31A @ 25°C
tf
5
VDD = 400V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
4
INDUCTIVE SWITCHING @ 25°C
6
645
VDD = 533V, VGS = 15V
6
ns
23
ID = 31A @ 25°C
Turn-off Delay Time
nC
9
VGS = 15V
Rise Time
td(off)
pF
105
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
4670
VGS = 0V
3
MAX
ID = 31A, RG = 5Ω
525
INDUCTIVE SWITCHING @ 125°C
1040
VDD = 533V VGS = 15V
ID = 31A, RG = 5Ω
µJ
625
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -31A, dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -31A, dl S/dt = 100A/µs)
dv/
Peak Diode Recovery
dv/
124
(Body Diode)
1.3
(VGS = 0V, IS = -31A)
dt
MAX
31
IS
dt
TYP
UNIT
Amps
Volts
850
ns
22
µC
5
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.00mH, RG = 25Ω, Peak IL = 31A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID31A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.15
Note:
0.5
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7073 Rev B
9-2004
0.25
0.20
0.3
t2
0.1
0
SINGLE PULSE
0.05
10-5
t1
Duty Factor D = t1/t2
0.05
10-4
°C/W
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
RC MODEL
0.0893
Power
(watts)
0.0842
0.0485
0.0103F
0.106F
0.0981F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
100
80
60
40
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
12
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
30
ID, DRAIN CURRENT (AMPERES)
40
7V
30
6.5V
20
6V
10
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
NORMALIZED TO
= 10V @ 15.5A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
1.15
35
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
D
V
2.0
= 15.5A
GS
= 10V
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
7.5V
50
1.1
1.0
0.9
0.8
9-2004
0
60
8V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7073 Rev B
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VGS =15 &10 V
70
0
Case temperature. (°C)
20
APT8024B2LL_LLL
80
10,000
100µS
10
5
= 31A
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
12
Coss
10mS
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
1,000
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
50
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT8024B2LL_LLL
20,000
127
140
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
td(off)
120
V
DD
R
70
G
= 533V
= 5Ω
T = 125°C
60
100
V
DD
R
G
80
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
J
= 5Ω
T = 125°C
J
L = 100µH
60
40
50
tf
40
30
tr
20
20
0
L = 100µH
10
td(on)
0
10
0
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
V
DD
R
G
= 533V
V
3500
= 5Ω
I
J
1500
L = 100µH
EON includes
Eon
diode reverse recovery.
1000
500
Eoff
5
10
15
20
25 30 35 40 45 50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
9-2004
T = 125°C
050-7073 Rev B
20
4000
2000
0
10
DD
D
= 533V
= 31A
T = 125°C
Eoff
J
3000
L = 100µH
E ON includes
2500
diode reverse recovery.
2000
Eon
1500
1000
500
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8024B2LL_LLL
Gate Voltage
10 %
90%
Gate Voltage
T = 125 C
J
td(on)
t
Drain Current
90%
T = 125 C
J
d(off)
Drain Voltage
90%
tf
tr
5%
5%
10%
Drain Current
10 %
Drain Voltage
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
9-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7073 Rev B
Drain
Drain
20.80 (.819)
21.46 (.845)