AP83T03AGMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
BVDSS
30V
RDS(ON)
6mΩ
ID
71A
G
▼ RoHS Compliant & Halogen-Free
S
D
Description
AP83T03A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK ® 5x6 ppackage is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
D
S
S
S
G
®
PMPAK 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current (Chip), VGS @ 10V
71
A
23.2
A
18.6
A
200
A
50
W
5
W
45
mJ
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Value
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Unit
2.5
℃/W
25
℃/W
1
201412183
AP83T03AGMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
-
6
mΩ
VGS=4.5V, ID=20A
-
-
9
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
26
-
ns
tf
Fall Time
VGS=10V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1050 1680
pF
Coss
Output Capacitance
VDS=15V
-
360
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
o
4.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP83T03AGMT-HF
120
200
T C =25 o C
10V
7.0V
6.0V
10V
7.0V
6.0V
5.0V
V G = 4.0V
100
ID , Drain Current (A)
ID , Drain Current (A)
160
T C = 150 o C
5.0V
120
V G = 4.0V
80
80
60
40
40
20
0
0
0
4
8
12
16
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
1.8
I D =20A
V G =10V
I D = 20 A
o
T C =25 C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
7
6
1.4
1.2
1.0
5
0.8
4
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.6
I D =250uA
16
Normalized VGS(th)
IS(A)
1.2
12
T j =150 o C
T j =25 o C
8
0.8
0.4
4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP83T03AGMT-HF
f=1.0MHz
2000
10
1600
8
C (pF)
VGS , Gate to Source Voltage (V)
I D = 20 A
V DS =15V
6
1200
C iss
4
800
2
400
C oss
C rss
0
0
0
4
8
12
16
20
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
Operation in this area
limited by RDS(ON)
ID (A)
100
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
1
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
80
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
60
40
T j =150 o C
20
60
40
20
o
T j =25 C
T j = -40 o C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Drain Current v.s. Case
Temperature
4
AP83T03AGMT-HF
MARKING INFORMATION
83T03AGMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5