SEMICONDUCTOR BC846/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E B L L FEATURES 2 H A P BC847 J UNIT 50 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K 80 VCBO P N RATING C SYMBOL BC846 Collector-Base Voltage 1 ) CHARACTERISTIC 3 G For Complementary With PNP Type BC856/857/858. MAXIMUM RATING (Ta=25 D High Voltage : BC846 VCEO=65V. DIM A B C D E G H J K L M N P V 1. EMITTER Collector-Emitter BC848 30 BC846 65 BC847 Voltage Emitter-Base Voltage VCEO 45 BC848 30 BC846 6 BC847 VEBO 6 BC848 2. BASE 3. COLLECTOR V SOT-23 V 5 Collector Current IC 100 mA Emitter Current IE -100 mA PC * 350 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range PC* : Package Mounted On 99.5% Alumina 10 8 Marking Lot No. Type Name 0.6mm. MARK SPEC TYPE BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C MARK 1A 1B 1E 1F 1G 1J 1K 1L 2008. 8. 13 Revision No : 3 1/3 BC846/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=30V, IE=0 BC846 DC Current Gain (Note) BC847 hFE VCE=5V, IC=2mA BC848 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage TYP. MAX. UNIT - - 15 nA 110 - 450 110 - 800 110 - 800 VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6 VBE(sat) 1 IC=10mA, IB=0.5mA - 0.7 - VBE(sat) 2 IC=100mA, IB=5mA - 0.9 - VBE(ON1) VCE=5V, IC=2mA 0.58 - 0.7 V VBE(ON2) VCE=5V, IC=10mA - - 0.75 V VCE=5V, IC=10mA, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - 2.5 4.5 pF - 1.0 10 dB fT Transition Frequency MIN. Collector Output Capacitance Cob Noise Figure NF V V VCE=6V, IC=0.1mA Rg=10k , f=1kHz NOTE : According to the value of hFE the BC846, BC847, BC848 are classified as follows. CLASSIFICATION hFE 2008. 8. 13 A B C BC846 110 220 200 450 BC847 110 220 200 450 420 800 BC848 110 220 200 450 420 800 Revision No : 3 - 2/3 BC846/7/8 C - V CE I C - V BE 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I I B =400µA I B =350µA I B =300µA 80 I B =250µA 60 I B =200µA I B =150µA 40 I B =100µA 20 I B =50µA 0 100 VCE =5V 50 30 10 5 3 1 0.5 0.3 0.1 0 4 8 12 16 20 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C VBE(sat) , V CE(sat) - I 1k 10 SATURATION VOLTAGE V BE(sat) , V CE(sat) (V) 500 300 100 50 30 10 C I C /I B =20 V CE =5V DC CURRENT GAIN h FE 0.4 0.2 3 1 V BE(sat) 0.3 0.1 V CE(sat) 0.03 0.01 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) C ob - V CB CAPACITANCE C ob (pF) 20 f=1MHz I E =0 10 5 3 1 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CB (V) 2008. 8. 13 Revision No : 3 3/3