APT30GS60KR(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. APT30GS60KR(G) Features Typical Applications • Fast Switching with low EMI • ZVS Phase Shifted and other Full Bridge • Very Low EOFF for Maximum Efficiency • Half Bridge • Short circuit rated • High Power PFC Boost • Low Gate Charge • Welding • Tight parameter distribution • Induction heating • Easy paralleling • High Frequency SMPS C G E • RoHS Compliant Absolute Maximum Ratings Symbol Parameter Rating I C1 Continuous Collector Current TC = @ 25°C 54 I C2 Continuous Collector Current TC = @ 100°C 30 I CM Pulsed Collector Current 1 113 VGE Gate-Emitter Voltage SSOA Unit A ±30V V Switching Safe Operating Area 113 EAS Single Pulse Avalanche Energy 2 165 mJ tSC Short Circut Withstand Time 3 10 µs Thermal and Mechanical Characteristics TJ, TSTG Typ Max Unit Total Power Dissipation TC = @ 25°C - - 250 W Junction to Case Thermal Resistance - - 0.50 Case to Sink Thermal Resistance, Flat Greased Surface - 0.11 - -55 - 150 - - 300 - 0.22 - oz - 5.9 - g - - 10 in·lbf - - 1.1 N·m Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque, 6-32 M3 Screw CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com °C/W °C 8-2007 RθCS Min Rev A RθJC Parameter 052-6307 Symbol PD Static Characteristics Symbol VBR(CES) Parameter VBR(ECS) TJ = 25°C unless otherwise specified Min Typ Max Collector-Emitter Breakdown Voltage Test Conditions VGE = 0V, IC = 250µA 600 - - Emitter-Collector Breakdown Voltage VGE = 0V, IC = 1A - 25 - Reference to 25°C, IC = 250µA - 0.60 - TJ = 25°C - 2.8 3.15 TJ = 125°C - 3.25 - 3 4 5 ∆VBR(CES)/∆TJ Breakdown Voltage Temperature Coeff VCE(ON) Collector-Emitter On Voltage 4 VGE(th) Gate-Emitter Threshold Voltage ∆VGE(th)/∆TJ Threshold Voltage Temp Coeff ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Dynamic Characteristics Symbols gfs Input Capacitance Output Capacitance Cres Reverse Transfer Capacitance Co(cr) Reverse Transfer Capacitance Charge Related 5 Co(er) Reverse Transfer Capacitance Current Related 6 Qg Total Gate Charge Gate-Emitter Charge Ggc Gate-Collector Charge td(on) Turn-On Delay Time tf Turn-On Switching Energy Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 td(on) Turn-On Delay Time Eon1 8-2007 Fall Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy 8 Eon2 Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 Unit V V/°C V - 6.7 - TJ = 25°C - - 50 TJ = 125°C - - 1000 - - ±100 nA Min Typ Max Unit - 18 - S - 1600 - - 140 - - 90 - - 130 - VGE = ±20V VGE = 0V, VCE = 25V f = 1MHz VGE = 0V VCE = 0 to 400V Inductive Switching IGBT and Diode: Turn-Off Delay Time Eon2 tf Rev A Rise Time 8 td(off) VCE = 600V, VGE = 0V VGE = 0 to 15V IC = 30A, VCE = 300V Eon1 tr VGE = VCE, IC = 1mA Test Conditions VCE = 50V, IC = 30A Forward Transconductance Qge VGE = 15V IC = 30A TJ = 25°C unless otherwise specified Coes td(off) 052-6307 Parameter Cies tr APT30GS60KR(G) TJ = 25°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V mV/°C µA pF 95 - 145 - - 12 - - 65 - - 16 - - 29 - - 360 - - 27 - - TBD - - 800 - - 570 - - 16 - Inductive Switching IGBT and Diode: - 29 - - 390 - TJ = 125°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V - 22 - - TBD - - 1185 - - 695 - nC ns mJ ns mJ TYPICAL PERFORMANCE CURVES VGE = 15V 80 TJ = 25°C 60 40 TJ = 125°C 20 TJ = 150°C 0 0 1 2 3 4 5 6 7 8 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) 100 TJ = 125°C TJ = 25°C 80 TJ = -55°C 60 40 20 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) IC = 60A IC = 30A IC = 15A 2 1 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 6 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC = 60A 5 4 IC = 30A 3 IC = 15A 2 1 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 5, On State Voltage vs Junction Temperature VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 0 2000 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 6, Gate Charge 0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 8-2007 Cres 50 Rev A Coes IC, DC COLLECTOR CURRENT(A) 60 Cies P C, CAPACITANCE ( F) 6V 052-6307 3 10 8V 20 16 4 100 9V 40 FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 1000 10V 60 FIGURE 2, Output Characteristics 5 0 11V 80 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250µs PULSE TEST<0.5 % DUTY CYCLE VGE = 13 & 15V 12V 100 0 FIGURE 1, Output Characteristics 0 T = 125°C J 100 120 APT30GS60KR(G) 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 TYPICAL PERFORMANCE CURVES 20 VGE = 15V 15 10 5 VCE = 400V TJ = 25°C, TJ =125°C RG = 9.1Ω L = 100µH 0 tf, FALL TIME (ns) tr, RISE TIME (ns) 40 30 20 RG = 9.1Ω, L = 100µH, VCE = 400V 30 TJ = 125°C, VGE = 15V 20 TJ = 25°C, VGE = 15V 10 0 0 1600 = 400V V CE = +15V V GE R = 9.1Ω G 3000 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) VCE = 400V RG = 9.1Ω L = 100µH 40 10 TJ = 125°C,VGE =15V 2000 1000 TJ = 25°C,VGE =15V 0 J 4 Eon2,60A Eoff,60A 2 Eon2,30A 1 Eoff,30A Eoff,15A Eon2 15A , 0 G 1200 TJ = 125°C, VGE = 15V 1000 800 600 400 200 TJ = 25°C, VGE = 15V 4 = 400V V CE = +15V V GE T = 125°C 3 1400 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (mJ) 5 = 400V V CE = +15V V GE R = 9.1Ω 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (mJ) 100 50 4000 8-2007 200 TJ = 25 or 125°C,VGE = 15V 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current Rev A VGE =15V,TJ=25°C 60 RG = 9.1Ω, L = 100µH, VCE = 400V 50 0 VGE =15V,TJ=125°C 300 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60 052-6307 400 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 APT30GS60KR(G) 500 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 = 400V V CE = +15V V GE R = 9.1Ω G 3 Eon2,60A 2 Eoff,60A Eon2,30A 1 Eoff,30A Eon2,15A 0 Eoff,15A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES APT30GS60KR(G) 200 200 100 100 10 VCE(on) 13µs 100µs 1ms 1 10ms 100ms 0.1 DC line TJ = 125°C TC = 75°C ICM IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) ICM 10 VCE(on) 13µs 100µs 1ms 0.1 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area 10ms 100ms TJ = 150°C TC = 25°C 1 DC line Scaling for Different Case & Junction Temperatures: IC = IC(T = 25°C)*(TJ - TC)/125 C 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area 0.50 0.9 0.40 0.7 0.30 0.5 0.20 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.60 0.3 t1 t2 0.10 0 SINGLE PULSE 0.1 0.05 10-5 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.209 0.00245 0.00548 0.165 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 20, Transient Thermal Impedance Model T = 100°C C 10 1 T = 125°C J T = 75°C C D = 50 % = 400V V CE R = 9.1Ω G Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 0 10 20 30 40 50 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current 8-2007 0.207 C Rev A 0.0838 Dissipated Power (Watts) T = 75°C 052-6307 TC (°C) ZEXT TJ (°C) FMAX, OPERATING FREQUENCY (kHz) 120 APT30GS60KR(G) APT40DQ60 Gate Voltage 10% TJ = 125°C td(on) Collector Current IC V CC V CE 90% tr 5% 5% 10% Collector Voltage Switching Energy A D.U.T. Figure 23, Turn-on Switching Waveforms and Definitions Figure 22, Inductive Switching Test Circuit Gate Voltage TJ = 125°C 90% td(off) Collector Voltage 90% tf 10% 0 Collector Current Switching Energy Figure 24, Turn-off Switching Waveforms and Definitions FOOT NOTE: 052-6307 Rev A 8-2007 1 2 3 4 5 6 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25°C, L = 224µH, RG = 25Ω, IC = 30A Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C Pulse test: Pulse width < 380µs, duty cycle < 2% Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of VCE less than V(BR)CES, use this equation: Co(er) = -1.40E-7/VDS^2 + 1.47E-8/VDS + 5.95E-11. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT30GS60KR(G) TO-220 K Package Outline e1 SAC: Tin, Silver, Copper Dimensions in Inches and (Millimeters) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 052-6307 Rev A Gate Collector Emitter 8-2007 Collector