To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE FY7ACH-03A OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm 1.8 MAX. 5.0 ➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN 0.4 1.27 ➄➅ ➆➇ ➃ ➁ ● 2.5V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) .............................................................. 26mΩ ● ID ........................................................................................... 7A ➀ ➂ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Ratings Unit VGS = 0V VDS = 0V Conditions 30 ±10 V V L = 10µH 7 49 7 A A A 1.7 6.8 1.8 –55 ~ +150 –55 ~ +150 A A W °C °C 0.07 g Typical value Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V 30 — — — — — — ±0.1 0.1 V µA mA ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V 0.5 — — — 0.9 20 28 0.14 1.3 26 38 0.18 V mΩ mΩ V — — — — 18 1450 480 230 — — — — S pF pF pF — — — — 25 55 130 120 — — — — ns ns ns ns — 0.75 1.1 V — — — 100 69.4 — °C/W ns VDS = 10V, VGS = 0V, f = 1MHz VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.7A, VGS = 0V Channel to ambient Thermal resistance Reverse recovery time Unit Min. IS = 1.7A, dis/dt = –50A/µs PERFORMANCE CURVES tw = 10µs DRAIN CURRENT ID (A) 3 2 1.6 1.2 0.8 0.4 100µs 101 7 5 1ms 3 2 10ms 100 7 5 100ms 3 2 10–1 TC = 25°C 0 0 50 100 150 DC OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 TC = 25°C Pulse Test VGS = 5V 4V 3V 2.5V 2V 12 8 1.5V 4 PD = 1.8W 0 Single Pulse 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) 16 0 7 5 200 CASE TEMPERATURE TC (°C) 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test VGS = 5V 4V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.0 3V 2.5V 2V 8 1.5V 6 4 PD = 1.8W 2 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 0.8 0.6 0.4 ID = 14A 0.2 7A 3A 0 0 20 1.0 2.0 3.0 4.0 32 VGS = 2.5V 24 4V 16 8 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 TC = 25°C VDS = 10V Pulse Test 16 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 5.0 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 40 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 12 8 4 VDS = 10V 7 Pulse Test 5 TC = 25°C 4 75°C 3 125°C 2 101 7 5 4 3 2 0 0 1.0 2.0 3.0 4.0 100 5.0 2 3 4 5 7 101 2 3 4 5 7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 Ciss 103 Coss 7 5 4 3 Crss 2 TCh = 25°C f = 1MHZ VGS = 0V 102 –1 10 2 3 4 5 7 100 SWITCHING TIME (ns) 104 CAPACITANCE Ciss, Coss, Crss (pF) 7 100 TCh = 25°C 7 VDD = 15V 5 VGS = 4V 4 RGEN = RGS = 50Ω 3 2 102 7 5 4 3 td(off) tf tr td(on) 2 2 3 4 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) 101 7 100 2 3 4 5 7 101 2 3 4 5 7 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE 5 SOURCE CURRENT IS (A) VDS = 10V 15V 20V 3 2 1 0 4 8 12 16 12 8 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 3 2 100 7 5 3 2 –50 0 50 100 1.2 0.8 0.4 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 1.6 CHANNEL TEMPERATURE Tch (°C) 0.4 0 GATE CHARGE Qg (nC) VGS = 4V 7 ID = 7A 5 Pulse Test 1.4 TCh = 125°C 75°C 25°C 4 0 101 10–1 VGS = 0V Pulse Test 16 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 TCh = 25°C ID = 7A 4 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 101 0.2 7 5 0.1 3 2 PDM 100 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep. 2001