Powerex Power CM150DY-12H Dual igbtmod 150 amperes/600 volt Datasheet

CM150DY-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
H-Series Module
150 Amperes/600 Volts
A
B
H
E
E
H
C2E1
C1
G
K
G1 E1
C
E2
E2 G2
S
S
L
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
R - M5 THD (3 TYP.)
P - DIA. (2 TYP.)
J
N
J
N
.110 TAB
J
M
D
F
Q
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
3.70
94.0
K
0.51
13.0
B
3.150±0.01
80.0±0.25
L
0.47
12.0
C
1.89
48.0
M
0.30
7.5
D
1.18 Max.
30.0 Max.
N
0.28
7.0
E
0.90
23.0
P
0.256 Dia.
Dia. 6.5
F
0.83
21.2
Q
0.26
6.5
G
0.71
18.0
R
M5 Metric
M5
H
0.67
17.0
S
0.16
4.0
J
0.63
16.0
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
(70ns) Free Wheel Diode
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM150DY-12H
is a 600V (VCES), 150 Ampere
Dual IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
150
12
237
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-12H
Dual IGBTMOD™ H-Series Module
150 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM150DY-12H
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage
VGES
±20
Volts
IC
150
Amperes
ICM
300*
Amperes
Collector Current
Peak Collector Current
Diode Forward Current
IF
150
Amperes
Diode Forward Surge Current
IFM
300*
Amperes
Power Dissipation
Pd
600
Watts
–
17
in-lb
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
–
26
in-lb
Module Weight (Typical)
–
270
Grams
VRMS
2500
Volts
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 150A, VGE = 15V
–
2.1
2.8**
Volts
IC = 150A, VGE = 15V, Tj = 150°C
–
2.15
–
Volts
Total Gate Charge
QG
VCC = 300V, IC = 150A, VGS = 15V
–
450
–
nC
Diode Forward Voltage
VFM
IE = 150A, VGS = 0V
–
–
2.8
Volts
Min.
Typ.
Max.
Units
–
–
15
nF
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Test Conditions
VGE = 0V, VCE = 10V, k = 1MHz
–
–
5.3
nF
–
–
3
nF
–
–
200
ns
tr
VCC = 300V, IC = 150A,
–
–
550
ns
td(off)
VGE1 = VGE2 = 15V, RG = 4.2Ω
–
–
300
ns
–
–
300
ns
tf
Diode Reverse Recovery Time
trr
IE = 150A, diE/dt = –300A/µs
–
–
110
ns
Diode Reverse Recovery Charge
Qrr
IE = 150A, diE/dt = –300A/µs
–
0.41
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
238
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.21
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
0.47
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.065
°C/W
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-12H
Dual IGBTMOD™ H-Series Module
150 Amperes/600 Volts
300
250
VGE = 20V
15
200
11
150
10
100
9
50
7
VCE = 10V
Tj = 25°C
Tj = 125°C
250
200
150
100
50
8
0
0
0
2
4
6
8
10
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
0
20
CAPACITANCE VS. VCE
(TYPICAL)
6
IC = 150A
4
2
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
IC = 300A
102
Coes
100
VGE = 0V
f = 1MHz
101
16
0
20
0.8
1.6
2.4
3.2
4.0
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
REVERSE RECOVERY TIME, t rr, (ns)
103
tf
td(off)
td(on)
102
tr
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
102
COLLECTOR CURRENT, IC, (AMPERES)
103
Irr
101
t rr
di/dt = -300A/µsec
Tj = 125°C
101
101
102
EMITTER CURRENT, IE, (AMPERES)
100
101
102
GATE CHARGE, VGE
102
102
Cres
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
12
10-1
10-1
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
0
8
Cies
101
IC = 60A
101
101
300
Tj = 25°C
8
4
200
102
Tj = 25°C
0
100
COLLECTOR-CURRENT, IC, (AMPERES)
103
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
300
SWITCHING TIME, (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
16
VCC = 200V
12
VCC = 300V
8
4
0
0
100
200
300
400
500
600
GATE CHARGE, QG, (nC)
239
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
10-1
100
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
240
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.21°C/W
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM150DY-12H
Dual IGBTMOD™ H-Series Module
150 Amperes/600 Volts
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.47°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
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