FS70SM-2 High-Speed Switching Use Nch Power MOS FET REJ03G1431-0200 (Previous: MEJ02G0110-0101) Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 10 V VDSS : 100 V rDS(ON) (max) : 20 mΩ ID : 70 A Integrated Fast Recovery Diode (TYP.) : 120 ns Outline RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 2, 4 4 1. 2. 3. 4. 1 1 2 3 Gate Drain Source Drain 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — 100 ±20 70 280 70 70 280 150 – 55 to +150 – 55 to +150 4.8 V V A A A A A W °C °C g Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value FS70SM-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Rev.2.00 Aug 07, 2006 Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr page 2 of 6 Min 100 — — 2.0 — — — — — — — — — — — — — Typ — — — 3.0 14 0.49 53 6540 1150 500 95 175 330 190 1.0 — 120 Max — ±0.1 0.1 4.0 20 0.7 — — — — — — — — 1.5 0.83 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 50 V, ID = 35 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 35 A, VGS = 0 V Channel to case IS = 70 A, dis/dt = – 100 A/µs FS70SM-2 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve Drain Current ID (A) 160 120 80 40 0 0 50 100 150 200 tw = 10µs 102 7 5 3 2 100µs 1ms 101 7 5 3 2 100 7 5 3 DC Tc = 25°C Single Pulse 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) VGS = 20V 10V 8V 100 VGS = 20V 10V 8V 6V 50 Tc = 25°C Pulse Test Drain Current ID (A) 3 2 Case Temperature Tc (°C) Tc = 25°C Pulse Test 6V 80 PD = 150W 60 40 5V PD = 35W 20 Drain Current ID (A) Power Dissipation PD (W) 200 40 5V 30 20 10 4V 0 0.4 0.8 1.2 1.6 2.0 0.4 0.6 0.8 1.0 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 1.6 1.2 100A 0.8 70A 0.4 30A 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 0.2 Drain-Source Voltage VDS (V) Tc = 25°C Pulse Test 0 0 Drain-Source Voltage VDS (V) 2.0 0 0 Aug 07, 2006 page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 20 Tc = 25°C Pulse Test 16 12 VGS = 10V 20V 8 4 0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain Current ID (A) FS70SM-2 Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) 100 Tc = 25°C VDS = 10V Pulse Test 80 60 40 20 0 0 4 8 12 16 20 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Switching Characteristics (Typical) 104 7 5 3 2 Switching Time (ns) Capacitance C (pF) Ciss 103 7 5 4 3 td(off) 2 tf tr 102 7 5 4 3 td(on) Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 2 Coss Crss 101 0 10 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 100 VGS = 0V Pulse Test Tch = 25°C ID = 70A 16 Source Current IS (A) Gate-Source Voltage VGS (V) 2 Capacitance vs. Drain-Source Voltage (Typical) 20 12 VDS = 20V 8 50V 80V 4 0 40 80 120 160 Gate Charge Qg (nC) Rev.2.00 TC = 25°C 75°C 125°C 101 7 5 4 3 Drain Current ID (A) Tch = 25°C 105 f = 1MHz 7 5 VGS = 0V 3 2 0 2 Gate-Source Voltage VGS (V) 2 103 7 5 3 2 102 7 VDS = 10V 5 Pulse Test 4 3 Aug 07, 2006 page 4 of 6 200 80 60 Tc = 125°C 40 75°C 25°C 20 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 VGS = 10V ID = 35A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2 PDM 0.1 10–1 tw 7 5 3 2 T 0.05 0.02 0.01 Single Pulse D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) 101 7 5 4 3 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS70SM-2 Aug 07, 2006 page 5 of 6 tr 90% td(off) tf FS70SM-2 Package Dimensions JEITA Package Code SC-65 Package Name TO-3P* RENESAS Code PRSS0004ZB-A Previous Code MASS[Typ.] 4.8g Unit: mm 4.5 15.9Max 4 2 φ3.2 20.0 5.0 1.5 2 19.5Min 4.4 1.0 0.6 2.8 5.45 5.45 4 Order Code Lead form Straight type Lead form Standard packing Static electricity prevention bag Plastic Magazine (Tube) Quantity 20 30 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FS70SM-2 FS70SM-2-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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