东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-220 Plastic-Encapsulate Transistors MBR1530CT-MBR1560CT TO—220 SCHOTTKY BARRIER RECTIFIER FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 1.ANODE 2.CATHODE 123 3.ANODE 1 2 2 3 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Characteristic Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage otherwise specified） MBR MBR MBR MBR MBR MBR 1530CT 1535CT 1540CT 1545CT 1550CT 1560CT 30 35 40 45 50 60 V 21 24.5 28 31.5 35 42 V Unit VR PMS Reverse Voltage VR(RMS) Average Rectified Output Current (Note 1) unless ＠ Ｔ Ｃ ＝１０５℃ IO 15 A IFSM 150 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load Forward Voltage Drop (JEDEC Method) ＠ Ｉ Ｆ ＝７．５Ａ， Ｔ Ｃ ＝１２５℃ ＠ ＩＦ＝７．５Ａ， Ｔ Ｃ＝ ２５℃ Peak Reverse Current at Rated DC Blocking Voltage ＠ Ｔ Ｃ ＝ ２５℃ ＠ Ｔ Ｃ ＝１２５℃ Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range VFM IRM 0.57 0.65 0.70 0.75 0.1 1.0 15 50 Cj Tj,TSTG Notes: 1. Thermal resistance junction to case mounted heatsink. 2. Measured at 1.OMHz and applied reverse voltage of 4.0V D 300 -65 to V mA pF +150 ℃ TO-220-3L PACKAGE OUTLINE DIMENSIONS A D C1 E E1 F φ L1 b1 A1 L b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 4.470 4.670 1.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.710 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 e 0.491 0.100TYP 2.540TYP e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 φ 3.790 3.890 0.149 0.153