Preliminary Datasheet H5N2901FL-M0 290V - 18A - MOS FET High Speed Power Switching R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 Features Low on-resistance RDS(on) = 0.07 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote2 EARNote2 Note3 Pch ch-c Tch Tstg Ratings 290 ±30 18 72 18 72 6 2.1 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. STch = 25C, Tch 150C 3. Value at Tc = 25C R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 Page 1 of 6 H5N2901FL-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance RDS(on) Min 290 — — 3.0 10 — Typ — — — — 18 0.070 Max — 1 ±0.1 4.0 — 0.091 Unit V A A V S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 2200 300 38 35 60 110 45 56 13 26 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC Body-Drain diode forward voltage Body-Drain diode reverse recovery time VDF trr Body-Drain diode reverse recovery charge Qrr — — — 0.9 190 1.3 1.5 — — V ns C Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| Test conditions ID = 10 mA, VGS = 0 VDS = 290 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9 A, VDS = 10 V Note4 ID = 9 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 9 A VGS = 10 V RL = 16.1 Rg = 10 VDD = 230 V VGS = 10 V ID = 18 A IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 Page 2 of 6 H5N2901FL-M0 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 100 10 100 PW 10 = 10 0 1 Drain Current ID (A) Drain Current ID (A) 1000 μs μs Operation in this area is limited by RDS(on) 0.1 Ta = 25°C Pulse Test 10 V 80 7V 60 6V 40 20 VGS = 5 V Tc = 25°C 1 shot 0.01 0.1 1 10 0 4 8 12 16 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) VDS = 10 V Pulse Test 80 Tc = −25°C 25°C 60 75°C 40 20 0 2 4 6 8 10 1 VGS = 10 V Ta = 25°C Pulse Test 0.1 0.01 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 0.30 0.25 20 Drain to Source Voltage VDS (V) VGS = 10 V Pulse Test 0.20 ID = 30 A 0.15 9A 0.10 15 A 0.05 0 −25 Reverse Recovery Time trr (ns) Drain Current ID (A) 0 1000 100 100 Static Drain to Source on State Resistance RDS(on) (Ω) 8V 100 1000 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 1 10 100 Reverse Drain Current IDR (A) Page 3 of 6 H5N2901FL-M0 Preliminary Typical Capacitance vs. Drain to Source Voltage 1000 Coss 100 Crss 10 0 VGS = 0 f = 1 MHz 40 60 80 Reverse Drain Current IDR (A) VGS 300 VDD = 230 V 100 V 50 V 200 100 20 0 40 60 80 Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 40 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 8 4 VDD = 230 V 100 V 50 V Drain to Source Voltage VDS (V) 60 16 12 VDS 100 VGS = 0 Ta = 25°C Pulse Test 0 ID = 30 A Ta = 25 °C 0 20 100 80 400 Gate to Source Voltage VGS (V) Ciss Drain to Source Voltage VDS (V) Ta = 25°C Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) 0 100 5 4 ID = 10 mA 3 1 mA 0.1 mA 2 1 VDS = 10 V 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 H5N2901FL-M0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 PDM 1 0.0 lse u tp 0.01 100 μ PW T PW T ho 1s D= 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 145 V 90% td(on) R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 tr 90% td(off) tf Page 5 of 6 H5N2901FL-M0 Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number H5N2901FL-M0-E#T2 R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 Quantity 50 pcs Shipping Container Tube Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2013 Renesas Electronics Corporation. All rights reserved. Colophon 2.2