Soft Switching Series IHW30N100R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant C G E PG-TO-247-3 Applications: • Microwave Oven • Soft Switching Applications VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 1000V 30A 1.5V 175°C H30R100 PG-TO-247-3 Parameter Symbol Value Unit Collector-emitter voltage VCE 1000 V DC collector current IC Type IHW30N100R Maximum Ratings A 60 30 TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area VCE ≤ 1000V, Tj ≤ 175°C - 90 Diode forward current IF 60 30 TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax IFpuls 90 Gate-emitter voltage VGE ±20 Transient Gate-emitter voltage (tp < 5 ms) V ±25 412 W Tj -40...+175 °C Storage temperature Tstg -55...+175 °C Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Power dissipation, TC = 25°C Ptot Operating junction temperature 1 260 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.2 Nov 08 Soft Switching Series IHW30N100R q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.36 K/W RthJCD 0.36 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, 40 RthJA junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1000 - - T j = 25°C - 1.5 1.7 T j = 150 °C - 1.7 - T j = 175 °C - 1.75 - Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =500 μA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C =30A VGE=0V, IF=30A T j = 25°C - 1.5 1.7 T j = 150 °C - 1.65 - T j = 175 °C - 1.7 - 5.1 5.8 6.4 Gate-emitter threshold voltage VGE(th) I C =700 μA,V C E =V G E Zero gate voltage collector current ICES V C E = 10 00 V , VGE=0V μA T j = 25°C - - 5 T j = 175 °C - - 2500 Gate-emitter leakage current IGES V C E = 0 V ,V G E =20V - - 600 nA Transconductance gfs V C E =20V, I C =30A - 56 - S Ciss V C E =25V, - 2791 - pF Coss VGE=0V, - 82 - Reverse transfer capacitance Crss f=1MHz - 78 - Gate charge QGate V C C = 80 0 V, I C =30A - 209 - nC - 13 - nH Dynamic Characteristic Input capacitance Output capacitance V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Power Semiconductors 2 Rev. 2.2 Nov 08 Soft Switching Series IHW30N100R q Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - Unit IGBT Characteristic Turn-off delay time td(off) T j = 25°C , - 846 Fall time tf V C C = 60 0 V, I C =30A, - 33.3 Turn-on energy Eon V G E = 0 /1 5 V, - - Turn-off energy Eoff R G = 2 6Ω , - 2.1 Total switching energy Ets - - mJ - Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. Unit IGBT Characteristic Turn-off delay time td(off) T j = 175 °C - 948 - Fall time tf V C C = 60 0 V, - 40.4 - Turn-on energy Eon I C =30A, - - - Turn-off energy Eoff V G E = 0 /1 5 V, - 2.86 - Total switching energy Ets R G = 2 6Ω - - - Power Semiconductors 3 mJ Rev. 2.2 Nov 08 IHW30N100R q Soft Switching Series tp=1µs 90A 70A 20µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A TC=80°C 60A TC=110°C 50A 40A 30A Ic 10A 50µs 100µs 500µs 1A 10ms DC 20A 10A 0A 100Hz 1kHz 10kHz 0.1A 1V 100kHz 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 26Ω) 400W 50A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 350W 300W 250W 200W 150W 100W 40A 30A 20A 10A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) 4 Rev. 2.2 Nov 08 IHW30N100R q Soft Switching Series 80A VGE=20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A 15V 60A 13V 11V 9V 40A 7V 20A 60A 15V 13V 11V 40A 9V 7V 20A 0A 0A 0V 1V 2V 0V 3V 80A 60A 40A 20A TJ=175°C 25°C 0A 0V 2V 4V 6V 8V 10V 2V 3V IC=60A 2.5V 2.0V IC=30A 1.5V IC=15A 1.0V 0.5V 0.0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT VGE=20V 5 Rev. 2.2 Nov 08 IHW30N100R q Soft Switching Series 1000ns 1000ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns 100ns tf tf 10ns 0A 10A 20A 30A 40A 50A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 600V, VGE = 0/15V, RG=26Ω, Dynamic test circuit in Figure E) t, SWITCHING TIMES td(off) 100ns tf 25°C 50°C 75°C 100°C 125°C 40Ω 6V max. 5V typ. 4V min. 3V 2V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 600V, VGE = 0/15V, IC = 30A, RG=26Ω, Dynamic test circuit in Figure E) Power Semiconductors 30Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 600V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 1000ns 20Ω 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) 6 Rev. 2.2 Nov 08 IHW30N100R q Soft Switching Series Eoff 4.0mJ 3.0mJ 2.0mJ 1.0mJ 0.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 5.0mJ Eoff 2.0mJ 1.0mJ 0.0mJ 0A 10A 20A 30A 40A 20Ω 50A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 600V, VGE = 0/15V, RG=26Ω, Dynamic test circuit in Figure E) Eoff 1.5mJ 1.0mJ 0.5mJ 0.0mJ 25°C 40Ω 3.0mJ E, SWITCHING ENERGY LOSSES 2.0mJ 30Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 600V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) 2.5mJ E, SWITCHING ENERGY LOSSES 3.0mJ 50°C 75°C 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 400V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 600V, VGE = 0/15V, IC = 30A, RG = 26Ω, Dynamic test circuit in Figure E) Power Semiconductors Eoff 2.5mJ 500V 600V 700V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 30A, RG = 26Ω, Dynamic test circuit in Figure E) 7 Rev. 2.2 Nov 08 IHW30N100R q Soft Switching Series Ciss 1nF 200V 10V 800V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 15V Coss 100pF 5V Crss 0V 0nC 50nC 100nC 150nC 200nC 10pF 250nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) 0V 0.2 R,(K/W) 0.1586 0.0987 0.0807 0.026 0.1 0.05 0.02 R 1 τ, (s) -2 7.03*10 -3 6.76*10 -4 6.53*10 -5 8.22*10 R2 -2 10 K/W 0.01 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse 10µs 100µs 1ms ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 30V 40V D=0.5 -1 1µs 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) D=0.5 10 K/W 10V 10ms 100ms 0.2 R,(K/W) 0.1586 0.0987 0.0807 0.026 0.1 0.05 0.02 R 1 τ, (s) -2 7.03*10 -3 6.76*10 -4 6.53*10 -5 8.22*10 R2 -2 10 K/W 0.01 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse 1µs tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T) Power Semiconductors -1 10 K/W 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 20. Diode transient thermal impedance as a function of pulse width (D=tP/T) 8 Rev. 2.2 Nov 08 IHW30N100R q Soft Switching Series VF, FORWARD VOLTAGE IF, FORWARD CURRENT 2.0V 20A TJ=25°C 175°C 10A 0A 0.0V 0.5V 1.0V VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors 30A 1.5V 15A 1.0V 0.5V 0.0V -50°C 1.5V IF=60A 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature 9 Rev. 2.2 Nov 08 Soft Switching Series IHW30N100R q PG-TO247-3 M M MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 20.31 4.47 3.70 6.00 6.30 0.780 0.164 0.138 0.216 0.238 10 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.2 Nov 08 IHW30N100R q Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF t 10% Ir r m dir r /dt 90% Ir r m VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.2 Nov 08 Soft Switching Series IHW30N100R q Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.2 Nov 08