SEMICONDUCTOR BD136 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES D C E High Current. (Max. : -1.5A) F Low Voltage (Max. : -45V) DC Current Gain : hFE=40Min. @IC=-0.15A G Complementary to BD135. H DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Base Current IB -0.5 A Collector Power Ta=25 Dissipation Tc=25 L Junction Temperature Storage Temperature Range 1.25 PC 10 Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC M N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.5 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 W ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A V(BR)CEO IC=-30mA, IB=0 -45 - - V hFE (1) IC=-5mA, VCE=-2V 25 - - hFE (2) IC=-150mA, VCE=-2V 40 - 250 hFE (3) IC=-500mA, VCE=-2V 25 - - VCE(sat) IC=-500mA, IB=-50mA - - -0.5 V Base-Emitter Voltage VBE VCE=-2V, IC=-500mA - - -1.0 V Transition Frequency fT VCE=-5V, IC=-50mA - 160 - MHz Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage 2003. 6. 16 Revision No : 0 1/1