KEC BD136 Epitaxial planar pnp transistor Datasheet

SEMICONDUCTOR
BD136
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
B
FEATURES
D
C
E
High Current. (Max. : -1.5A)
F
Low Voltage (Max. : -45V)
DC Current Gain : hFE=40Min. @IC=-0.15A
G
Complementary to BD135.
H
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
J
K
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-45
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
A
Base Current
IB
-0.5
A
Collector Power
Ta=25
Dissipation
Tc=25
L
Junction Temperature
Storage Temperature Range
1.25
PC
10
Tj
150
Tstg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
M
N
O
1
2
3
P
1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERS
8.3 MAX
5.8
0.7
_ 0.1
Φ3.2 +
3.5
_ 0.3
11.0 +
2.9 MAX
1.0 MAX
1.9 MAX
_ 0.15
0.75 +
_ 0.5
15.5 +
_ 0.1
2.3 +
_ 0.15
0.65 +
1.6
3.4 MAX
TO-126
W
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-30V, IE=0
-
-
-0.1
A
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-10
A
V(BR)CEO
IC=-30mA, IB=0
-45
-
-
V
hFE (1)
IC=-5mA, VCE=-2V
25
-
-
hFE (2)
IC=-150mA, VCE=-2V
40
-
250
hFE (3)
IC=-500mA, VCE=-2V
25
-
-
VCE(sat)
IC=-500mA, IB=-50mA
-
-
-0.5
V
Base-Emitter Voltage
VBE
VCE=-2V, IC=-500mA
-
-
-1.0
V
Transition Frequency
fT
VCE=-5V, IC=-50mA
-
160
-
MHz
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
2003. 6. 16
Revision No : 0
1/1
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