MSA-9970 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-9970 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed with high open loop gain and is intended to be used with external resistive and reactive feedback elements to create a variety of special purpose gain blocks. • Open Loop Feedback Amplifier Applications include very broadband, minimum ripple amplifiers with extended low frequency performance possible through the use of a high valued external feedback blocking capacitor; extremely well matched (–20 dB return loss) amplifiers; and negative gain slope amplifiers for flattening MMIC cascades. • 16.0 dB Typical Open Loop Gain at 1.0 GHz • Performance Flexibility with User Selected External Feedback for: Broadband Minimum Ripple Amplifiers Low Return Loss Amplifiers Negative Gain Slope Amplifiers • Usable Gain to 6.0 GHz • 14.5 dBm Typical P1 dB at 1.0 GHz • Hermetic Gold-ceramic Microstrip Package The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package Typical Biasing Configuration USER SELECTABLE Cf Rf R bias VCC ≥ 10 V RFC (Optional) 4 C block IN 1 C block MSA 2 3 OUT Vd = 7.8 V MSA-9970 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current 80 mA [2,3] Power Dissipation 750 mW RF Input Power +13 dBm Junction Temperature200°C Storage Temperature –65°C to 200°C Thermal Resistance[2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 88°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Min. Typ. Max. Power Gain[2] (|S21| 2) f = 0.1 GHz dB f = 1.0 GHz 14.5 f = 4.0 GHz 8.0 17.5 16.0 9.0 17.5 10.0 P1 dB Output Power at 1 dB Gain Compression[2] f = 1.0 GHz dBm 14.5 IP3 Third Order Intercept Point[2] f = 1.0 GHz dBm25.0 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient GP Notes: 1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page. 2. Open loop value. Adding external feedback will alter device performance. Units V 7.0 mV/°C 7.8 –16.0 8.6 MSA-9970 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) Freq. GHz Mag 0.02 0.05 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 .89 .90 .90 .89 .87 .85 .82 .79 .72 .65 .59 .54 .53 .52 .53 .55 .55 .55 .56 .56 S11 Ang S21 Mag dB Ang S12 Mag dB –1 17.5 7.51 179 –3 17.5 7.47 177 –6 17.4 7.45 174 –12 17.4 7.43 168 –24 17.2 7.27 156 –36 17.0 7.06 145 –47 16.6 6.78 134 –59 16.2 6.49 124 –86 15.3 5.79 100 –113 14.2 5.10 77 –133 13.0 4.45 61 –155 11.6 3.79 42 –174 10.3 3.2826 168 9.22.87 10 152 8.02.51 –4 140 6.92.21 –17 130 5.8 1.94 –31 121 4.6 1.70 –43 114 3.5 1.50 –53 1072.6 1.34 –63 –37.2 –35.6 –33.2 –29.6 –24.4 –20.8 –18.8 –17.0 –14.6 –13.4 –12.9 –12.5 –12.4 –12.5 –12.6 –12.8 –13.2 –13.6 –13.8 –14.0 Ang Mag .014 4 .017 34 .022 43 .033 61 .061 63 .091 58 .115 52 .141 44 .18629 .215 16 .227 7 .236 –3 .239 –14 .238 –22 .234 –30 .228 –37 .220 –44 .209 –48 .203 –54 .201 –59 .93 .92 .93 .93 .91 .90 .87 .84 .74 .64 .57 .51 .45 .39 .34 .31 .30 .32 .37 .42 S22 Ang k –1 –3 –6 –13 –27 –40 –53 –66 –96 –123 –143 –163 178 164 155 153 154 157 158 157 1.01 .83 .70 .39 .24 .21 .21 .24 .28 .34 .39 .46 .53 .59 .66 .72 .80 .88 .94 .97 Typical Performance, TA = 25°C (unless otherwise noted) 21 50 19 18 TC = +125C TC = +25C 40 T = –55C C 17 15 9 P1 dB (dBm) 30 12 Id (mA) Gp (dB) 15 20 6 10 0 0.1 0.3 0.5 1.0 3.0 6.0 2 4 6 8 10 Vd (V) Gp (dB) 16 Gp (dB) 15 Gp 5 4.0 GHz 14 P1 dB 13 10 20 30 40 50 Id (mA) Figure 4. Open Loop Power Gain vs. Current. P1 dB (dBm) 15 10 –55 –25 +25 0.1 0.2 0.3 0.5 1.0 2.0 4.0 Figure 3. Open Loop Output Power at 1 dB Gain Compression vs. Frequency. 17 0.1 GHz 1.0 GHz Id = 25 mA FREQUENCY (GHz) Figure 2. Device Current vs. Voltage. 20 11 7 0 FREQUENCY (GHz) Figure 1. Open Loop Power Gain vs. Frequency, Id = 35 mA. Id = 35 mA 13 9 3 0 .05 Id = 45 mA +85 +125 TEMPERATURE (C) Figure 5. Open Loop Output Power at 1 dB Gain Compression and Open Loop Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 35 mA. Ordering Information Part Numbers MSA-9970 No. of Devices 100 Comments Bulk 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF OUTPUT AND BIAS RF INPUT 3 1 2 .004 ± .002 .10 ± .05 GROUND .070 1.78 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2762EN AV02-1235EN May 15, 2008