UNISONIC TECHNOLOGIES CO., LTD MJE13003-V NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R204-034.a MJE13003-V NPN SILICON TRANSISTOR ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-V-x-TA3-T MJE13003G-V-x-TA3-T MJE13003L-V-x-TM3-T MJE13003G-V-x-TM3-T MJE13003L-V-x-TMS-T MJE13003G-V-x-TMS-T MJE13003L-V-x-TN3-R MJE13003G-V-x-TN3-R MJE13003L-V-x-T60-F-K MJE13003G-V-x-T60-F-K MJE13003L-V-x-T6C-A-K MJE13003G-V-x-T6C-A-K MJE13003L-V-x-T6C-F-K MJE13003G-V-x-T6C-F-K MJE13003L-V-x-T6S-F-K MJE13003G-V-x-T6S-F-K MJE13003L-V-x-T92-A-B MJE13003G-V-x-T92-A-B MJE13003L-V-x-T92-A-K MJE13003G-V-x-T92-A-K MJE13003L-V-x-T92-F-B MJE13003G-V-x-T92-F-B MJE13003L-V-x-T92-F-K MJE13003G-V-x-T92-F-K MJE13003L-V-x-T9N-B MJE13003G-V-x-T9N-B MJE13003L-V-x-T9N-K MJE13003G-V-x- T9N-K Package TO-220 TO-251 TO-251S TO-252 TO-126 TO-126C TO-126C TO-126S TO-92 TO-92 TO-92 TO-92 TO-92NL TO-92NL Pin Assignment 1 2 3 B C E B C E B C E B C E B C E E C B B C E B C E E C B E C B B C E B C E E C B E C B Packing Tube Tube Tube Tape Reel Bulk Bulk Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Box Bulk MARKING TO-220/TO-251/TO-251S/TO-252 TO-126/TO-126C/TO-126S TO-92 TO-92NL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R204-034.a MJE13003-V NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS Collector-Emitter Voltage VCEO(SUS) 400 Collector-Base Voltage VCBO 700 Emitter Base Voltage VEBO 9 Continuous IC 1.5 Collector Current Peak (1) ICM 3 Continuous IB 0.75 Base Current Peak (1) IBM 1.5 Continuous IE 2.25 Emitter Current Peak (1) IEM 4.5 TO-126/TO-126C 1.4 TO-126S TO-92/TO-92NL 1.1 TA=25°C TO-220 2 TO-251/TO-251S 1.56 TO-252 PD Power Dissipation TO-126/TO-126C 20 TO-126S TO-92/TO-92NL 1.5 TC=25°C TO-220 40 TO-251/TO-251S 25 TO-252 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT V V V A A A W W W W W W W W °C °C 3 of 9 QW-R204-034.a MJE13003-V NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage SYMBOL VCEO(SUS) TC=25°C TC=100°C Collector Cutoff Current Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) ICEO IEBO IC=10mA , IB=0 VCEO=Rated Value, VBE(OFF)=1.5 V VEB=9V, IC=0 MIN TYP MAX UNIT 400 V 1 5 1 Is/b See Fig.5 RBSOA See Fig.6 hFE1 hFE2 DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time Fall Time Note: Pulse Test: PW=300μs, Duty Cycle≤2% TEST CONDITIONS fT COB tD tR tS tF tSTG tC tF IC=0.5A, VCE=5V IC=1A, VCE=5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A, TC=100°C IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A, TC=100°C 14 5 IC=100mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz 4 mA mA 57 30 0.5 1 3 1 1 1.2 1.1 10 21 V V MHz pF VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1% 0.05 0.1 0.8 1 1.2 4 0.75 1.00 μs μs μs μs IC=1A, VCLAMP=300V, IB1=0.2A, VBE(OFF)=5VDC, TC=100°C 1.7 4 0.29 0.75 0.15 μs μs μs CLASSIFICATION OF hFE1 RANK RANGE A 14 ~ 22 B 21 ~ 27 C 26 ~ 32 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 31 ~ 37 E 36 ~ 42 F 41 ~ 47 G 46 ~ 52 H 51 ~ 57 4 of 9 QW-R204-034.a MJE13003-V APPLICATION INFORMATION Table 1.Test Conditions for Dynamic Performance Resistive Switching Reverse Bias Safe Operating Area and Inductive Switching Test Circuits +125V Rc TUT RB SCOPE D1 Circuit Values -4.0V Coil Data : VCC=20V Ferroxcube core #6656 VCLAMP=300V Full Bobbin ( ~ 200 Turns) #20 VCC=125V RC=125Ω D1=1N5820 or Equiv. RC=47Ω GAP for 30 mH/2 A LCOIL=50mH Output Waveforms Test Waveforms NPN SILICON TRANSISTOR +10.3 V 25μS 0 -8.5V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic Table 2. Typical Inductive Switching Performance Ic Tc tsv tRV tTI (°C) (μs) tc (A) (μs) tFI (μs) (μs) (μs) 0.35 0.30 0.40 0.36 0.5 25 100 1.3 1.6 0.23 0.30 0.26 0.30 1 25 100 1.5 1.7 0.10 0.13 25 100 1.8 3 0.07 0.10 0.05 0.16 0.08 0.22 0.08 0.28 ICPK VCLAMP 90% Ic 90% Vclamp IC tsv tRV tFI tTI tc 1.5 0.14 0.05 0.16 0.26 0.06 0.29 Note: All Data Recorded in the Inductive Switching Circuit in Table 1 VCE IB 90% IB1 10% VCLAMP 10% ICPK 2% Ic Time Fig.1 Inductive Switching Measurements UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R204-034.a MJE13003-V NPN SILICON TRANSISTOR SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tSV = Voltage Storage Time, 90% IB1 to 10% VCLAMP tRV = Voltage Rise Time, 10 ~ 90% VCLAMP tFI= Current Fall Time, 90 ~ 10% IC tTI = Current Tail, 10 ~ 2% IC tC = Crossover Time, 10% VCLAMP to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation: PSWT = 1/2 VCCIC (tC) f In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this transistor are the inductive switching speeds (tC and tSV) which are guaranteed at 100°C. RESISTIVE SWITCHING PERFORMANCE 10 2 7 Vcc=125V Ic/IB=5 TJ=25°C 0.7 tR Time, t (°C) 0.5 3 0.3 0.2 0.1 Vcc=125V Ic/IB=5 TJ=25°C ts 5 Time, t (°C) 1 tD @ VBE(OFF)=5V 0.07 2 1 0.7 0.5 tF 0.3 0.05 0.2 0.03 0.02 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 10 20 0.1 0.02 0.03 Collector Current, IC (A) 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 Collector Current, IC (A) Fig.3 Turn-Off Time Effective Transient Thermal Resistance, R(t) (Normalized) Fig.2 Turn-On Time Fig.4 Thermal Response UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 9 QW-R204-034.a MJE13003-V NPN SILICON TRANSISTOR SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig.5 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC≥25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Fig.5. TJ(PK) may be calculated from the data in Fig.4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Collector Current, IC (A) Collector Current, IC (A) REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as RBSOA( Reverse Bias Safe Operating Area) and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Fig.6 gives RBSOA characteristics. The Safe Operating Area of Fig.5 and 6 are specified ratings (for these devices under the test conditions shown.) Fig.5 Active Region Safe Operating Area UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig.6 Reverse Bias Safe Operating Area 7 of 9 QW-R204-034.a MJE13003-V NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain Collector Saturation Region 2 DC Current Gain, hFE 60 Collector-Emitter Voltage, VCE(V) 80 TJ=150°C 40 25°C 30 20 -55°C 1 0 8 VCE=2V - - - - - -VCE=5V 6 4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 TJ=25°C 1.6 Ic=0.1A 0.3A 0.5A 1.2 0.4 0 0.002 0.005 0.01 Base-Emitter Voltage 0.05 0.1 0.2 0.5 2 1 Collector-Emitter Saturation Region 0.35 VBE(SAT) @ IC/IB=3 - - - - - -VBE(ON) @ VCE=2V 1.2 0.3 Ic/IB=3 0.25 Voltage, V(V) Voltage, V(V) 0.02 Base Current, IB (A) 1.4 TJ=-55°C 1 25°C 0.8 25°C 0.6 0.05 0.07 0.1 0.2 0.3 25°C 0.15 0.1 150°C 150°C 0.02 0.03 TJ=-55°C 0.2 0.05 0.5 0.7 1 0 0.02 0.03 2 0.05 0.07 0.1 Collector Current,IC (A) Collector cut-off Region 4 Capacitance, C (pF) TJ=150°C 125°C 100°C 1 0 2 TJ=25°C 300 10 10 1 Capacitance VCE=250V 10 0.5 0.7 0.3 500 3 2 0.2 Collector Current, IC (A) 10 Collector Current, IC (μA) 1.5A 0.8 Collector Current,IC (A) 0.4 1A 75°C 50°C CIB 200 100 70 50 30 20 10 -1 10 -0.4 7 5 FORWARD REVERSE -0.2 COB 10 25°C 0 +0.2 +0.4 +0.6 Base-Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 Reverse Voltage, VR (V) 8 of 9 QW-R204-034.a MJE13003-V NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R204-034.a