ON MJW21196 Silicon power transistor Datasheet

MJW21195 (PNP)
MJW21196 (NPN)
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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Features
•
•
•
•
•
16 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS, 200 WATTS
Total Harmonic Distortion Characterized
High DC Current Gain − hFE = 20 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
IC
16
30
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
TJ, Tstg
− 65 to +150
°C
Symbol
Max
Unit
RqJC
0.7
°C/W
Collector Current
Collector Current
− Continuous
− Peak (Note 1)
Operating and Storage Junction
Temperature Range
1
2
TO−247
CASE 340L
3
MARKING DIAGRAM
MJW2119x
AYWWG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
RqJA
40
1 BASE
3 EMITTER
2 COLLECTOR
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
x
A
Y
WW
G
= 5 or 6
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MJW21195
MJW21195G
MJW21196
MJW21196G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 3
1
Package
Shipping
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MJW21195/D
MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typical
Max
Unit
VCEO(sus)
250
−
−
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ICEO
−
−
100
mAdc
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
IEBO
−
−
50
mAdc
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
−
50
mAdc
4.0
2.25
−
−
−
−
20
8
−
−
80
−
−
−
2.0
−
−
−
−
1.0
3
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
SECOND BREAKDOWN
IS/b
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
Adc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
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2
THD
%
−
0.8
−
−
0.08
−
fT
4
−
−
MHz
Cob
−
−
500
pF
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
NPN MJW21196
F T, CURRENT BANDWIDTH PRODUCT (MHz)
FT, CURRENT BANDWIDTH PRODUCT (MHz)
PNP MJW21195
6.5
6.0
VCE = 10 V
5.5
5.0
VCE = 5 V
4.5
4.0
3.5
TJ = 25°C
ftest = 1 MHz
3.0
2.5
2.0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
VCE = 10 V
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW21195
NPN MJW21196
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
TJ = 100°C
100
25°C
-25°C
TJ = 100°C
100
25°C
-25°C
VCE = 20 V
VCE = 20 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 3. DC Current Gain, VCE = 20 V
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW21195
NPN MJW21196
1000
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
10
TJ = 100°C
100
25°C
-25°C
TJ = 100°C
100
25°C
-25°C
VCE = 5 V
VCE = 5 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 5. DC Current Gain, VCE = 5 V
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 5 V
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3
100
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
30
30
25
IC , COLLECTOR CURRENT (A)
IC , COLLECTOR CURRENT (A)
2.0 A
1.5 A
20
1.0 A
15
IB = 0.5 A
10
5.0
2.0 A
1.5 A
25
1.0 A
20
IB = 0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
PNP MJW21195
NPN MJW21196
25
3.0
2.5
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1.4
TJ = 25°C
IC/IB = 10
2.0
1.5
VBE(sat)
1.0
0.5
TJ = 25°C
IC/IB = 10
1.2
1.0
VBE(sat)
0.8
0.6
0.4
VCE(sat)
0.2
VCE(sat)
0
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 9. Typical Saturation Voltages
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
NPN MJW21196
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
PNP MJW21195
10
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
100
10
100
10
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
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4
100
MJW21195 (PNP) MJW21196 (NPN)
The data of Figure 13 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
10 ms
100 ms
10
1 Sec
1
0.1
1
10
100
10 ms
1 Sec
1
0.1
1000
100 ms
10
1
10
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
10000
10000
Cib
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
Cob
1000
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
Cob
100
0.1
1.0
10
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW21195 Typical Capacitance
Figure 16. MJW21196 Typical Capacitance
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5
100
MJW21195 (PNP) MJW21196 (NPN)
1.2
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 17. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
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6
8.0 W
MJW21195 (PNP) MJW21196 (NPN)
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
H
G
D 3 PL
0.25 (0.010)
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
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