PD - 95252
SMPS MOSFET
IRF6217PbF
HEXFET® Power MOSFET
Applications
Reset Switch for Active Clamp Reset
DC to DC converters
l Lead-Free
VDSS
l
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l
RDS(on) max
2.4W@VGS =-10V
-150V
S
S
S
G
1
8
2
7
3
6
4
5
ID
-0.7A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
-0.7
-0.5
-5.0
2.5
0.02
± 20
4.5
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
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1
10/04/04
IRF6217PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
–––
–––
-3.0
–––
–––
–––
–––
Typ.
–––
-0.17
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
2.4
Ω
VGS = -10V, ID = -0.42A
-5.0
V
VDS = VGS, ID = -250µA
-25
VDS = -150V, VGS = 0V, TJ = 25°C
µA
-250
VDS = -120V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
0.55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.0
1.6
2.8
12
7.2
14
16
150
30
10
150
15
45
Max. Units
Conditions
–––
S
VDS = -50V, ID = -0.42A
9.0
ID = -0.42A
2.4
nC
VDS = -120V
4.2
VGS = -10V,
–––
VDD = -75V
–––
I
D = -0.42A
ns
–––
RG = 6.2Ω
–––
VGS = -10V
–––
VGS = 0V
–––
VDS = -25V
–––
pF
ƒ = 1.0KHz
–––
VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz
–––
VGS = 0V, VDS = -120V, ƒ = 1.0KHz
–––
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
15
-1.4
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.8
–––
–––
-5.0
–––
–––
–––
–––
51
86
-1.6
77
130
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -0.42A, VGS = 0V
TJ = 25°C, IF = -0.42A
di/dt = -100A/µs
D
S
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IRF6217PbF
-I D, Drain-to-Source Current (A)
TOP
BOTTOM
10
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
-I D, Drain-to-Source Current (A)
10
1
-5.0V
0.1
10
0.1
-5.0V
0.01
0.01
1
1
20µs PULSE WIDTH
T J= 150 ° C
20µs PULSE WIDTH
T J= 25 ° C
0.1
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
0.1
100
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
I D = -0.70A
TJ = 150 ° C
1
0.1
V DS= -50V
20µs PULSE WIDTH
0.01
4
5
7
8
9
11
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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12
(Normalized)
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
2.0
TJ = 25 ° C
1.5
1.0
0.5
V GS = -10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF6217PbF
10000
ID = -0.42A
10
-V GS , Gate-to-Source Voltage (V)
Ciss
100
Coss
10
Crss
1
8
6
4
2
0
1
10
100
0
1000
4
6
8
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100
-I D , Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
TJ = 150 ° C
1
TJ = 25 ° C
V GS= 0 V
0.2
0.6
0.9
1.3
-V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1
100µsec
1msec
0.1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
4
VDS = -120V
VDS = -75V
VDS = -30V
Coss = Cds + Cgd
1000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1.6
1
10
100
1000
-V DS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6217PbF
1.0
RD
VDS
VGS
0.8
D.U.T.
RG
-
-I D , Drain Current (A)
+
V DD
0.6
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.4
Fig 10a. Switching Time Test Circuit
0.2
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( ° C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
1
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
+T A
1
10
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
1.94
R DS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance ( Ω)
IRF6217PbF
1.92
1.90
1.88
VGS = -10V
1.86
1.84
1.82
1.80
0.00
0.25
0.50
0.75
1.00
1.25
9.00
8.00
7.00
6.00
5.00
4.00
ID = -0.7A
3.00
2.00
1.00
1.50
4.5
6.0
7.5
9.0
10.5
12.0
13.5
15.0
-V GS, Gate -to -Source Voltage (V)
-I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
12V
QG
-VGS
50KΩ
.2µF
QGS
.3µF
QGD
35
D.U.T.
+VDS
VG
TOP
VGS
30
Charge
-3mA
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
VDS
I AS
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
EAS , Single Pulse Avalanche Energy (mJ)
BOTTOM
IG
25
20
15
10
5
0
25
V(BR)DSS
75
100
125
150
( ° C)
15V
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
50
Starting Tj, Junction Temperature
tp
ID
-0.6A
-1.1A
-1.4A
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF6217PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
C
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF6217PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 15mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
RG = 25Ω, IAS = -1.4A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
8
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