HMC311SC70 / 311SC70E v02.1108 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Typical Applications Features The HMC311SC70(E) is ideal for: P1dB Output Power: +15 dBm • Cellular / PCS / 3G Output IP3: +30 dBm • WiBro / WiMAX / 4G Gain: 15 dB • Fixed Wireless & WLAN Cascadable, 50 Ohm I/O’s • CATV & Cable Modem Single Supply: +5V • Microwave Radio & Test Equipment Industry Standard SC70 Package Functional Diagram General Description The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifi cations, Vs= 5V, Rbias= 22 Ohm, TA = +25° C Parameter Min. Typ. 14.0 13.0 12.5 11.0 15.0 15.0 14.5 13.0 Gain DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz 6.0 - 8.0 GHz Gain Variation Over Temperature DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz 6.0 - 8.0 GHz 0.004 0.007 0.012 0.018 Return Loss Input / Output DC - 8.0 GHz 15 Reverse Isolation DC - 8.0 GHz Output Power for 1 dB Compression (P1dB) DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz 6.0 - 8.0 GHz Output Third Order Intercept (IP3) DC - 2.0 GHz 2.0 - 6.0 GHz 6.0 - 8.0 GHz Noise Figure DC - 8.0 GHz Supply Current (Icq) 13.5 12.0 10.0 8.0 Max. dB dB dB dB 0.007 0.012 0.016 0.022 dB/ °C dB/ °C dB/ °C dB 18 dB 15.5 15.0 13.0 11.0 dBm dBm dBm dBm 30 27 24 dBm dBm dBm 5 55 dB 74 Note: Data taken with broadband bias tee on device output. 9 - 14 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Gain vs. Temperature 20 15 18 10 16 5 0 S21 S11 S22 -5 -10 9 14 12 10 +25C -40C +85C 8 -15 6 -20 4 -25 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 Input Return Loss vs. Temperature 5 6 7 8 Output Return Loss vs. Temperature 0 0 -5 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 4 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 +25C +85C -40C -10 -15 -20 -25 -20 -30 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 FREQUENCY (GHz) 4 5 6 7 8 9 10 9 10 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 20 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 -5 +25C +85C -40C -10 -15 -20 +25C +85C -40C 7 6 5 4 3 2 1 -25 0 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 10 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 15 HMC311SC70 / 311SC70E v02.1108 Psat vs. Temperature 18 18 16 16 14 14 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 10 +25C +85C -40C 8 10 +25C +85C -40C 6 4 4 0 1 2 3 4 5 6 7 8 9 10 0 1 2 FREQUENCY (GHz) Power Compression @ 1 GHz 16 Pout (dBm), GAIN (dB), PAE (%) 18 16 14 12 10 8 6 4 2 Pout Gain PAE 0 -2 -6 -4 -2 0 2 4 22 20 18 +25C +85C -40C 12 10 5 FREQUENCY (GHz) 6 7 8 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 24 4 10 10 Pout Gain PAE 8 6 4 2 0 -6 -4 -2 0 2 4 6 80 40 35 60 30 25 40 20 15 10 5 Gain P1dB Psat IP3 Icq 0 0 4.5 20 4.75 5 5.25 Vs (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 Icq (mA) IP3 (dBm) 26 3 9 Gain, Power, IP3 & Supply Current vs. Supply Voltage @ 1 GHz 28 2 8 INPUT POWER (dBm) 30 1 7 12 -4 -20 -18 -16 -14 -12 -10 -8 6 34 0 6 -2 Output IP3 vs. Temperature 14 5 14 INPUT POWER (dBm) 16 4 Power Compression @ 6 GHz 18 -4 -20 -18 -16 -14 -12 -10 -8 3 FREQUENCY (GHz) 32 9 - 16 12 8 6 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Absolute Maximum Ratings +7V RF Input Power (RFIN)(Vcc = +3.9V) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 5.21 mW/°C above 85 °C) 0.34 W Thermal Resistance (junction to lead) 191 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Collector Bias Voltage (Vcc) 3. LEAD PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC311SC70 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC311SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [1] 311 [2] 311 [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 17 HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Pin Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Pin Number Function Description Interface Schematic 1, 2, 4, 5 GND These pins must be connected to RF/DC ground. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 6 RFOUT RF output and DC Bias for the output stage. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.8 Rbias Recommended Component Values Frequency (MHz) Component 9 - 18 50 900 1900 2200 2400 3500 5200 5800 L1 270 nH 56 nH 22 nH 22 nH 15 nH 8.2 nH 3.3 nH 3.3 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC311SC70 / 311SC70E v02.1108 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz Evaluation PCB List of Materials for Evaluation PCB 118040 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 22 Ohm Resistor, 1210 Pkg. L1 22 nH Inductor, 0603 Pkg. U1 HMC311SC70 / HMC311SC70E PCB [2] 117360 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 19