HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely suitable and capable of withstanding high VSRW under operating conditions. B .112 x 45° A C E J .125 E B FEATURES: C D • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W (PEP) • Omnigold™ Metalization System I GH 45 V VCEO 18 V VEBO 3.5 V PDISS MINIMUM MAXIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 DIM 12.0 A VCBO E F MAXIMUM RATINGS IC Ø.125 NOM. FULL R C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E 183 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.05 °C/W F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 J CHARACTERISTICS ORDER CODE: ASI10596 TC = 25 °C NONETEST CONDITIONS SYMBOL .280 / 7.11 I MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 45 V BVCES IC = 100 mA 40 V BVCEO IC = 50 mA 18 V BVEBO IE = 10 mA 3.5 V ICES VCE = 15 V hFE VCE = 5.0 V IC = 5.0 A 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without 10 mA --- --- REV. C 1/2 HF50-12F ERROR! REFERENCE SOURCE NOT FOUND. COB VCB = 12.5 V GP VCE = 12.5 V ηC POUT = 50 W (PEP) f = 1.0 MHz PIN = 5.0 W f = 30 MHz 300 dB 10 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without pF % REV. C 2/2