GaN Hybrid Power Amplifier HT2121-15M Product Features Applications • E-pHEMT GaAs + GaN on SiC • 2-Stage Amplifier 50ohms Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • RF Sub-Systems • Base Station • Repeater • 4G/LTE system • Small cell Package Type : NP-1EL Description The HT2121-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 2110 ~ 2170MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds1 =5V, Vds2 =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 2110 - 2170 ZS = ZL = 50 ohm 30 32 35 dB - 0.6 - - -15 -7.5 Pout @ Average dBm - 33 - Pout @ Psat dBm 40.9 41.7 - Pulse Width=20us, Duty10% ACLR @ BW 10MHz LTE (PAPR 7.5dB) - -36 -32 Non DPD dBc - -55 - With DPD Drain Efficiency % 24 26 - - 140 - - 250 - Power Gain Gain Flatness Input Return Loss Ids1 Amp1 : Idq1 = 140mA Amp2 : Idq2 = 105mA Pout @ Average mA Ids2 Supply Voltage V - 5 - Drive Amp. (Vds1) - -3.0 -2.0 Gate Bias (Vgs2) - 28 - Main Bias (Vds2) Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate voltage supply and last turn on the Drain voltage supplies Turn off : Turn off the Drain voltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180) 2. HT Series have internal DC blocking capacitors at the RF input and output ports Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 3.5 - Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 1/8 Version 1.0 GaN Hybrid Power Amplifier HT2121-15M Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs2 Drain-Source Voltage V 7 Vds1 50 Vds2 Gate Current mA 4.0 Igs2 Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -30 ~ 85 TC Storage Temperature °C -40 ~ 100 TSTG Maximum RF Input Level dBm 20 Pin Operating Voltage & Input Level PARAMETER UNIT Drain Voltage V MIN TYP MAX SYMBOL 4.75 5 5.25 Vds1 27.5 28 28.5 Vds2 Gate Voltage (on-stage) V - -3 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 2 Idq2 (Control Vgs2) mA 100 105 110 Idq2 RF Input Level dBm - - 15 Pin Block Diagram E-pHEMT GaAs GaN on SiC Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 2/8 Version 1.0 GaN Hybrid Power Amplifier HT2121-15M Application Circuit Part List Location Model No. Spec. Maker C4 1812C225K101CT 2.2uF / 100V WALSIN C1, C5 C3216X7R1C106K 10uF / 16V TDK C2, C3 201CHA100JSLE 10pF TEMEX 2Layer, 30mil ROGERS Evaluation Board RO4350B Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 3/8 Version 1.0 HT2121-15M GaN Hybrid Power Amplifier Performance Charts * Bias condition @ Idq1= 140mA, Idq2= 105mA, Ta=25℃ Psat vs. Frequency 35 44 34 43 33 Psat [dBm] Power Gain [dB] Power Gain vs. Frequency 32 31 30 2.11 2.13 2.14 2.15 2.16 41 40 Power Gain @Pout=33dBm 2.12 42 39 2.11 2.17 Psat @Pulse Width 20us (Duty 10%) 2.12 2.13 Frequency[GHz] -35 28 -36 27 -37 26 -38 ACLR_L @Pout=33dBm ACLR_U @Pout=33dBm -39 -40 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Efficiency vs. Frequency Efficiency [%] ACLR [dBc] ACLR vs. Frequency 2.14 2.15 Frequency[GHz] 2.16 25 24 2.17 23 2.11 Drain Efficienct @Pout=33dBm 2.12 2.13 2.14 2.15 2.16 2.17 Frequency[GHz] Frequency[GHz] Ids1 vs. Ids2 vs. Frequency 300 250 Ids[mA] 200 150 100 Ids1, E-pHEMT Ids2, GaN 50 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency[GHz] Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 4/8 Version 1.0 HT2121-15M GaN Hybrid Power Amplifier Performance Charts * Bias condition @ Idq1= 140mA, Idq2= 105mA, Ta=25℃ Power Gain vs. Output Power Efficiency vs. Output Power 35 45 40 Efficiency [%] Power Gain [dB] 33 31 29 35 30 25 2110MHz 2110MHz 27 2140MHz 2140MHz 20 2170MHz 2170MHz 25 15 30 31 32 33 34 35 36 30 31 32 Output Power[dBm] ACLR vs. Output Power -28 400 -30 350 -32 300 -34 -36 35 36 250 Ids1 @2140MHz 200 2110MHz -38 34 Ids1 vs. Ids2 vs. Output Power Ids[mA] ACLR [dBc] 33 Output Power[dBm] Ids2 @2140MHz 150 2140MHz 2170MHz 100 -40 30 31 32 33 34 35 30 36 Output Power[dBm] 31 32 33 34 35 36 Output Power[dBm] *LTE 10MHz (PAPR=7.5dB) w/o DPD Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 5/8 Version 1.0 HT2121-15M GaN Hybrid Power Amplifier Package Dimensions (Type: NP-1EL) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function 1 RF Input 4 N.C 8 GND 11 GND 2 GND 5 Vds1 9 GND 12 GND 3 GND 6 Vgs2 10 RF Output 13 GND - - 7 Vds2 - - 14 GND Recommended Pattern Recommended Mounting Configuration * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 6/8 Version 1.0 GaN Hybrid Power Amplifier HT2121-15M Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs2. 3. Apply Vds1 and Vds2 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds1 and Vds2, and then, turn off the Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram - Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 7/8 Version 1.0 GaN Hybrid Power Amplifier HT2121-15M Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec Reflow Cycle Limit= 1time * Measured reflow profile Ordering Information Part Number Package Design -R (Reel) HT2121-15M -B (Bulk) -EVB (Evaluation Board) Revision History Part Number Release Date Version Modification Data Sheet Status HT2121-15M 2013.04.05 1.0 Operating Voltage & Input Level (2p) HT2121-15M 2013.02.25 0.2 Application Circuit Package Dimensions Reflow profile Preliminary HT2121-15M 2013.01.15 0.1 Initial Release of Data sheet Preliminary - RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078. Korean Facilities : 82-31-250-5078 / [email protected] US Facilities : 919-677-8780 / [email protected] All specifications may change without notice 8/8 Version 1.0