BAV74LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant ANODE 1 3 CATHODE MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Rating Peak Forward Surge Current 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 ANODE 2 Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C SOT−23 (TO−236) CASE 318 STYLE 9 PD RqJA MARKING DIAGRAM PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. JA M G G 1 JA = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAV74LT1G SOT−23 (Pb−Free) 3000/Tape & Reel BAV74LT3G SOT−23 (Pb−Free) 10,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 6 1 Publication Order Number: BAV74LT1/D BAV74LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 50 − Vdc − − 100 0.1 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 5.0 mAdc) mAdc Reverse Voltage Leakage Current, (Note 3) (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Voltage (IF = 100 mAdc) VF − 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 W) trr − 4.0 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. CURVES APPLICABLE TO EACH ANODE 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance www.onsemi.com 2 8 50 BAV74LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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