100mA / 50V Digital transistors (with built-in resistors) DTC114TM / DTC114TE / DTC114TUA / DTC114TKA z Applications Inverter, Interface, Driver z Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. z Structure NPN epitaxial planar silicon transistor (Resistor built-in type) z Dimensions (Unit : mm) DTC114TM DTC114TE 0.7 1.6 0.55 0.2 0.3 0.8 0.8 1.2 (2) 0.2 (1)(2) 0.4 0.4 0.13 (1) Base (2) Emitter (3) Collector 0.8 ROHM : VMT3 2.0 DTC114TKA (1) Emitter (2) Base (3) Collector 1.1 0.4 0.8 (3) 1.6 2.8 2.1 1.25 0.1Min. (1) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 2.9 0.7 (3) (2) 0.15 1.0 Abbreviated symbol : 04 0.9 0.2 0.3 0.2 0.5 0.5 ROHM : EMT3 Abbreviated symbol : 04 DTC114TUA (1) 0.2 0.5 0.15 1.3 (2) (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : 04 (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 0.3Min. 0.22 1.6 (3) (3) 0.1Min. 1.2 0.32 (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : 04 z Inner circuit C B R1 E B : Base C : Collector E : Emitter R1=10kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ٤ 1/2 2009.06 - Rev.C DTC114TM / DTC114TE / DTC114TUA / DTC114TKA Data Sheet z Packaging specifications Part No. Package VMT3 EMT3 UMT3 SMT3 Package type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − DTC114TM DTC114TE − DTC114TUA − − DTC114TKA − − − − z Absolute maximum ratings (Ta=25qC) Parameter Limits Symbol Unit DTA114TM DTA114TE DTA114TUA DTA114TKA Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW z Electrical characteristics (Ta=25qC) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage IE=50μA Parameter Conditions BVEBO 5 − − V Collector cutoff current ICBO − − 0.5 μA VCB=50V Emitter cutoff current IEBO − − 0.5 μA VEB=4V VCE(sat) − − 0.3 V IC/IB=10mA/1mA DC current transfer ratio hFE 100 250 600 − VCE=5V, IC=1mA Input resistance R1 7 10 13 kΩ Transition frequency fT − 250 − MHz Collector-emitter saturation voltage ∗ − VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor 1k VCE=5V DC CURRENT GAIN : hFE 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ٤ COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) z Electrical characteristic curves 1 lC/lB=10 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/2 2009.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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