, Dnc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJH16006 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCECXSUS) = 450V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: • Switching regulators • Inverters • Solenoid and relay drivers • Motor controls • Deflection circuits i PIN 1.BASE 2. COLLECTOR 1 2 3. EMI TIER TO-3PN package 3 «. ABSOLUTE MAXIMUM RATINGS(Ta=250C) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VcEO(SUS) Collector-Emitter Voltage 450 V Emitter-Base Voltage 6 V Collector Current-Continuous 8 A Collector Current-Peak 16 A VEBO Ic I CM -wl'*- L -»— 0 Base Current-Continuous 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation @T0=25'C 125 W Tj Junction Temperature 150 'C Tstg Storage Temperature -65-150 'C IB G mm DIM A B C D E F G H J K L N q THERMAL CHARACTERISTICS R SYMBOL PARAMETER MAX UNIT s u Rth j-c Thermal Resistance, Junction to Case 1.0 •c/w Y WIN MAX 19.90 20.10 15.50 15.70 4.70 4.90 0.90 1.10 1.90 2.10 3.40 3.60 2.90 3.10 3.20 3.40 0.595 0.605 20.50 20.70 1.90 2.10 10.89 10.91 4.90 5.10 3.35 3.45 1.995 2.005 5.90 6.10 9.90 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors MJH16006 Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA; IB=0 VcE(sat)-i Collector-Emitter Saturation Voltage lc= 3A; IB= 0.4A 2.5 V VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 5A; IB= 0.66A lc=5A; IB=0.66A,TC=100'C 3.0 3.0 V Base-Emitter Saturation Voltage lc= 5A; IB= 0.66A lc=5A; IB=0.66A,TC=100'C 1.5 1.5 V ICEV Collector Cutoff Current VCEv=850V;VBE(off)=1.5V VcEv=850V;VBE(off)=1 .5V;TC=100°C 0.25 1.5 mA IGER Collector Cutoff Current VCE= 850V; RBE= 50 n ,TC= 100'C 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; lc=0 1.0 mA hFE DC Current Gain lc= 8A ; VCE= 5V COB Output Capacitance lE=0;VCB=10V;f,est=1.0kHz 350 PF 20 50 ns 85 250 ns 1000 2500 ns 70 250 ns VeE(sat) 450 V 5 Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time lc= 5A , Vcc= 250V; RB2= 4 Q ; IB1= 0.66A; IB2= -1 .3A;PW= 30 u s; Duty Cycle =S 2.0%