AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical. -RoHS Compliant -AON7403L is Halogen Free VDS (V) = -30V (VGS = -10V) ID = -8A RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -4.5V) DFN 3x3 Top View Bottom View D S S S G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,G C TA=70°C B A V A 27 11 Junction and Storage Temperature Range 1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.6 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. ±25 -6 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D Units V -80 IDSM TA=25°C Power Dissipation Maximum -30 -8 TC=25°C Power Dissipation S -20 ID IDM TA=25°C Continuous Drain Current G -20 TC=100°C Pulsed Drain Current D D D D RθJA RθJC Typ 30 60 4 °C Max 40 75 4.5 Units °C/W °C/W °C/W www.aosmd.com AON7403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 TJ=55°C VGS=-10V, ID=-8A TJ=125°C Static Drain-Source On-Resistance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr V 14 18 A VDS=-5V, ID=-10A 21 -0.7 1130 VGS=0V, VDS=-15V, f=1MHz mΩ S -1 V -3 A 1400 pF 240 pF 155 pF Ω VGS=0V, VDS=0V, f=1MHz 5.8 8 18 24 VGS=-10V, VDS=-15V, ID=-8A 5.5 nC 3.3 nC Gate Drain Charge tD(on) -3 36 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance -2.2 25 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current µA nA 26 VSD Units ±100 20 Forward Transconductance Coss -5 VGS=-4.5V, ID=-6A gFS IS Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ nC 8.7 ns VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 8.5 ns 18 ns IF=-8A, dI/dt=500A/µs 12 7 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs ns 16 26 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating I DSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev0: Jun 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 VDS=-5V -10V -8V 60 60 -ID(A) -ID (A) -6V 40 40 -4.5V 20 20 125°C VGS=-4V 25°C 0 0 0 1 2 3 4 5 0 1 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 40 1.8 Normalized On-Resistance 35 RDS(ON) (mΩ) 2 VGS=-4.5V 30 25 20 `V =-10V GS 15 VGS=-10V ID=-8A 1.6 1.4 VGS=-4.5V ID=-6A 1.2 1 10 0 5 10 15 20 0.8 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 10 50 150 ID=-8A 1 40 125°C -IS (A) RDS(ON) (mΩ) 0.1 30 125°C 25°C 0.01 0.001 20 0.0001 25°C 0.00001 10 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON7403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-8A 1200 Capacitance (pF) -VGS (Volts) 8 6 VDS=VGS ID=1mA 4 Ciss 900 600 2 300 0 0 0 5 10 15 20 1.4 50 Coss Crss 0 5 1000.0 50 100.0 40 10µs 100µs 10.0 RDS(ON) limited 10ms 100m 10s DC TJ(Max)=150°C TA=25°C 0.1 1 10 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 800 140 80 0.5 20 25 30 220 140 TJ(Max)=150°C TA=25°C 15 7 30 20 0 0.001 100 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 15 10 0.0 0.1 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) Qg (nC) Figure 7: Gate-Charge Characteristics 1.0 1.8 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD NOT ASSUME ANY LIABILITY ARISING COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH Ton Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com