LESHAN RADIO COMPANY, LTD. Digital transistors (built-in resistors) • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/ off conditions need to be set for operation, making device design easy. • Structure PNP digital transistor (with built-in resistors) •Equivalent circuit 2.9 + 0.2 DTB143EK DTB143EC + 0.2 0.1 1.9+ 0.2 0.95+0.95 1.1 - 0.8 + 0.1 (2) 0 ~ 0.1 2.8+ 0.2 1.6 + 0.2 - 0.1 (1) 0.4 IN R1 0.15 + 0.1 - 0.05 0.3 ~ 0.6 (3) + 0.1 - 0.06 OUT All terminals have same dimensions DTB143EK R2 GND(+) IN (1) GND (2) IN (3) OUT EIAJ: SC— 59 OUT GND(+) 2.9 + 0.2 1.9+ 0.2 0.95 0.95+0.95 + 0.2 - 0.1 0.45 + 0.1 (2) 0 ~ 0.1 2.4+ 0.2 1.3 + 0.2 - 0.1 (1) (3) 0.2Min 0.4 0.15 + 0.1 - 0.05 + 0.1 - 0.06 All terminals have same dimensions (1) GND (2) IN (3) OUT DTB143EC EIAJ: SOT— 23 • Absolute maximum ratings(Ta=25 °C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature symbol limits unit V cc V IN IC Pd Tj T stg –50 –30~+10 –500 V V mA mW °C °C 200 300 150 –55~+150 P10–1/2 LESHAN RADIO COMPANY, LTD. DTB143EK DTB143EC • Elecrical characteristics(T =25°C) a Parameter symbol Min. Typ. Max. I(off) — — –0.5 Output Voltage Input current V I(on) V O(on) II –3 — — — — — — –0.3 –1.8 V mA Output current I O(off) — — –0.5 µA V 47 3.29 0.8 — — 4.7 1 200 — 6.11 1.2 — — KΩ — MHz V O = – 5V,I O = – 50mA — — VCE = –10V, I E= 5 mA,f=100MHz* V Input voltage DC current gain GI Input resistance R1 Resistance ratio R 2/ R 1 Transition frequency fT *Transition frequency of the device Unit Conditions V CC= – 5V, I O= –100µA V V O= – 0.3V, I O=–20mA I O / I I =–50mA / –2.5mA V I = – 5V =– 50V,V I = 0 V CC ELECTRICAL CHARACTERISTIC CURVES -100 OUTPUT CURRENT: I O ( A ) INPUT VOLTAGE: V I(on) ( V ) -10m -5m V O = – 0.3V -50 -20 -10 T A = –40°C 25°C 100°C -5 -2 -1 -0.5 -0.2 -0.1 -100µ-200µ -500µ -1m -2m -5m -10m -20m CC =–5V -1m -500µ -200µ -100µ -50µ -20µ -10µ -5µ -2µ -1µ -50m -100m 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 OUTPUT CURRENT: I O (A) INPUT VOLTAGE: V I(ON) (V) Figure 1. Input voltage vs.output current (ON characteristics) Figure 2. Output current vs.input voltage (OFF characteristics) -1 1K V O= – 5 V OUTPUT VOLTAGE: V O(on) ( V ) T A = 100°C 25°C –40°C 200 100 50 20 10 5 2 I O / I I = 20 -0.5 500 DC CURRENT GAIN: G I V T A = 100°C 25°C –40°C -2m -0.2 T A = 100°C 25°C –40°C -0.1 -0.05 -0.02 -0.01 -.005 -.002 -.001 1 -100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m -100µ-200µ -500µ -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT: I O (A) OUTPUT CURRENT: I O (A) Figure 3. DC current gain vs.output current Figure 4. Output voltage vs.output current P10–2/2