TIGER ELECTRONIC CO.,LTD Product specification MJD122/MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO ±100 V Collector-Emitter Voltage VCEO ±100 V Emitter-Base Voltage VEBO ±5.0 V Collector Current IC ±5.0 A Base Current IB ±0.1 A Ptot 30 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C B E C TO-252 C O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCE = ±100V, IB = 0 — — ±0.5 mA Collector Cut-off Current ICBO VCB = ±100V, IE = 0 — — ±0.2 mA Emitter Cut-off Current IEBO VEB = ±5.0V, IC = 0 — — 2.0 mA Collector-Emitter Sustaining Voltage VCEO IC = ±30mA, IB = 0 ±100 — — V hFE(1) VCE = ±5.0V, IC = ±0.5A 1000 — — hFE(2) VCE = ±3.0V, IC = ±3.0A 1000 — — IC = ±3.0A, IB = ±12mA — — ±1.5 IC = ±5.0A, IB = ±20mA — — ±2.5 VCE = ±3.0V, IC = ±3.0A — — ±2.5 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage VCE(sat) VBE(on) V V