NXP NX3DV2567 Low-ohmic four-pole double-throw analog switch Datasheet

NX3DV2567
Low-ohmic four-pole double-throw analog switch
Rev. 1 — 28 September 2010
Product data sheet
1. General description
The NX3DV2567 is a four-pole double-throw analog switch (4PDT) optimized for
switching WLAN-SIM supply, data and control signals. It has one digital select input (S)
and four switches each with two independent input/outputs (nY0 and nY1) and a common
input/output (nZ). Schmitt trigger action at S makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 4.3 V.
A low input voltage threshold allows pin S to be driven by lower level logic signals without
significant increase in supply current ICC. This makes it possible for the NX3DV2567 to
switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level
translation.
The NX3DV2567 allows signals with amplitude up to VCC to be transmitted from nZ to nY0
or nY1; or from nY0 or nY1 to nZ..
2. Features and benefits
„ Wide supply voltage range from 1.4 V to 4.3 V
„ Very low ON resistance for supply path:
‹ 0.5 Ω (typical) at VCC = 1.8 V
‹ 0.45 Ω (typical) at VCC = 2.7 V
„ Low ON resistance for data path:
‹ 7 Ω (typical) at VCC = 1.8 V
‹ 6 Ω (typical) at VCC = 2.7 V
„ Low ON capacitance for data path
„ Wide −3 db bandwidth > 160 MHz
„ Break-before-make switching
„ High noise immunity
„ ESD protection:
‹ HBM JESD22-A114F Class 3A exceeds 4000 V
‹ HBM JESD22-A114F Class 3A I/O to GND exceeds 7000 V
‹ CDM AEC-Q100-011 revision B exceeds 1000 V
„ CMOS low-power consumption
„ Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
„ 1.8 V control logic at VCC = 3.6 V
„ Control input accepts voltages above supply voltage
„ Very low supply current, even when input is below VCC
„ High current handling capability (350 mA continuous current under 3.3 V supply for
supply path switch)
NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
„ Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
„ Cell phone, PDA, digital camera, printer and notebook
„ LCD monitor, TV and set-top box
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
NX3DV2567HR −40 °C to +125 °C
HXQFN16U plastic thermal enhanced extremely thin quad flat
package; no leads; 16 terminals; UTLP based;
body 3 x 3 x 0.5 mm
SOT1039-1
NX3DV2567GU −40 °C to +125 °C
XQFN16
SOT1161-1
plastic, extremely thin quad flat package; no leads;
16 terminals; body 1.80 x 2.60 x 0.50 mm
5. Marking
Table 2.
Marking codes
Type number
Marking code
NX3DV2567HR
D60
NX3DV2567GU
D60
NX3DV2567
Product data sheet
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
2 of 20
NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
6. Functional diagram
SUPPLY PATH
SWITCH
1Y0
1Z
1Y1
DATA PATH
SWITCHES
2Y0
2Z
2Y1
nY1
nZ
3Y0
3Z
3Y1
nY0
4Y0
4Z
S
4Y1
S
to other three switches
001aam595
Fig 1.
001aam596
Logic symbol
Fig 2.
Logic diagram (one switch)
7. Pinning information
13 4Y0
4Y0
13
14 VCC
VCC
14
terminal 1
index area
15 1Y1
1Y1
15
16 1Z
1Z
terminal 1
index area
16
7.1 Pinning
1Y0 1
1Y0
1
12
4Z
S
2
11
4Y1
2Y1
3
10
n.c.
2Z
4
9
3Y0
12 4Z
S 2
9 3Y0
001aam597
Transparent top view
Transparent top view
001aam598
Fig 3. Pin configuration SOT1039-1 (HXQFN16U)
Product data sheet
3Z 8
8
3Z
2Z 4
3Y1 7
7
3Y1
10 n.c.
GND 6
6
GND
2Y1 3
2Y0 5
5
2Y0
NX3DV2567
NX3DV2567
11 4Y1
NX3DV2567
Fig 4. Pin configuration SOT1161-1 (XQFN16)
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
3 of 20
NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
1Y0
1
independent input or output (supply switch)
2Y0, 3Y0, 4Y0
5, 9, 13
independent input or output (data switch)
S
2
select input
1Y1
15
independent input or output (supply switch)
2Y1, 3Y1, 4Y1
3, 7, 11
independent input or output (data switch)
1Z
16
common output or input (supply switch)
2Z, 3Z, 4Z
4, 8, 12
common output or input (data switch)
GND
6
ground (0 V)
n.c.
10
not connected
VCC
14
supply voltage
8. Functional description
Table 4.
Function table[1]
Input S
Channel on
L
nY0
H
nY1
[1]
H = HIGH voltage level; L = LOW voltage level.
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
Conditions
select input S
Min
Max
Unit
−0.5
+4.6
V
[1]
−0.5
+4.6
V
[2]
−0.5
VCC + 0.5 V
VI
input voltage
VSW
switch voltage
IIK
input clamping current
VI < −0.5 V
−50
-
mA
ISK
switch clamping current
VI < −0.5 V or VI > VCC + 0.5 V
-
±50
mA
ISW
switch current
supply path switch
VSW > −0.5 V or VSW < VCC + 0.5 V;
source or sink current
-
±350
mA
VSW > −0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
-
±500
mA
-
±128
mA
−65
+150
°C
data path switch
VSW > −0.5 V or VSW < VCC + 0.5 V;
source or sink current
Tstg
storage temperature
NX3DV2567
Product data sheet
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Ptot
Parameter
Conditions
total power dissipation
Tamb = −40 °C to +125 °C
[3][4]
Min
Max
Unit
-
250
mW
[1]
The minimum input voltage rating may be exceeded if the input current rating is observed.
[2]
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3]
For HXQFN16U package: above 135 °C the value of Ptot derates linearly with 16.9 mW/K.
[4]
For XQFN16 package: above 133 °C the value of Ptot derates linearly with 14.5 mW/K.
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol Parameter
Conditions
VCC
supply voltage
VI
input voltage
VSW
switch voltage
Tamb
ambient temperature
Δt/ΔV
select input S
[1]
input transition rise and fall rate
[2]
VCC = 1.4 V to 4.3 V
Min
Max
Unit
1.4
4.3
V
0
4.3
V
0
VCC
V
−40
+125
°C
-
200
ns/V
[1]
To avoid sinking GND current from terminal nZ when switch current flows in terminal nYn, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal nZ, no GND current will flow from terminal nYn. In this case, there
is no limit for the voltage drop across the switch.
[2]
Applies to control signal levels.
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
VIH
VIL
II
HIGH-level
input voltage
LOW-level
input voltage
input leakage
current
NX3DV2567
Product data sheet
Tamb = 25 °C
Conditions
Tamb = −40 °C to +125 °C
Unit
Min
Typ
Max
Min
VCC = 1.4 V to 1.6 V
0.9
-
-
0.9
-
-
V
VCC = 1.65 V to 1.95 V
0.9
-
-
0.9
-
-
V
VCC = 2.3 V to 2.7 V
1.1
-
-
1.1
-
-
V
VCC = 2.7 V to 3.6 V
1.3
-
-
1.3
-
-
V
VCC = 3.6 V to 4.3 V
1.4
-
-
1.4
-
-
V
VCC = 1.4 V to 1.6 V
-
-
0.3
-
0.3
0.3
V
VCC = 1.65 V to 1.95 V
-
-
0.4
-
0.4
0.3
V
VCC = 2.3 V to 2.7 V
-
-
0.4
-
0.4
0.4
V
VCC = 2.7 V to 3.6 V
-
-
0.5
-
0.5
0.5
V
VCC = 3.6 V to 4.3 V
-
-
0.6
-
0.6
0.6
V
select input S;
VI = GND to 4.3 V;
VCC = 1.4 V to 4.3 V
-
-
-
-
±0.5
±1
μA
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Rev. 1 — 28 September 2010
Max
Max
(85 °C) (125 °C)
© NXP B.V. 2010. All rights reserved.
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NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
IS(OFF)
IS(ON)
ICC
ΔICC
OFF-state
leakage
current
ON-state
leakage
current
Tamb = 25 °C
Conditions
Tamb = −40 °C to +125 °C
Unit
Min
Typ
Max
Min
Max
Max
(85 °C) (125 °C)
VCC = 1.4 V to 3.6 V
-
-
±5
-
±50
±500
nA
VCC = 3.6 V to 4.3 V
-
-
±10
-
±50
±500
nA
VCC = 1.4 V to 3.6 V
-
-
±5
-
±50
±500
nA
VCC = 3.6 V to 4.3 V
-
-
±10
-
±50
±500
nA
VCC = 3.6 V
-
-
100
-
500
5000
nA
VCC = 4.3 V
nY0 and nY1 port;
see Figure 5
nZ port;
VCC = 1.4 V to 3.6 V;
see Figure 6
supply current VI = VCC or GND;
VSW = GND or VCC
-
-
150
-
800
6000
nA
additional
VSW = GND or VCC
supply current
VI = 2.6 V; VCC = 4.3 V
-
2.0
4.0
-
7
7
μA
VI = 2.6 V; VCC = 3.6 V
-
0.35
0.7
-
1
1
μA
VI = 1.8 V; VCC = 4.3 V
-
7.0
10.0
-
15
15
μA
VI = 1.8 V; VCC = 3.6 V
-
2.5
4.0
-
5
5
μA
VI = 1.8 V; VCC = 2.5 V
-
50
200
-
300
500
nA
-
1
-
-
-
-
pF
CI
input
capacitance
CS(OFF)
OFF-state
capacitance
supply path switch
-
35
-
-
-
-
pF
data path switch
-
3
-
-
-
-
pF
ON-state
capacitance
supply path switch
-
130
-
-
-
-
pF
data path switch
-
16
-
-
-
-
pF
CS(ON)
11.1 Test circuits
VCC
VIL or VIH
S
nY0
1
nZ
nY1
2
switch
switch
S
1
VIH
2
VIL
IS
VO
VI
GND
001aam599
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 5.
Test circuit for measuring OFF-state leakage current
NX3DV2567
Product data sheet
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
6 of 20
NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
VCC
VIL or VIH
IS
S
nY0
1
nZ
nY1
2
switch
S
1
VIH
2
VIL
switch
VO
VI
GND
001aam600
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 6.
Test circuit for measuring ON-state leakage current
11.2 ON resistance
Table 8.
ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13.
Symbol Parameter
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Conditions
Min
Typ[1]
Max
Min
Max
Supply path switch
RON
ΔRON
ON resistance VI = GND to VCC;
ISW = 100 mA; see Figure 7
VCC = 1.8 V; VSW = 0 V, 1.8 V
-
0.5
0.75
-
0.85
Ω
VCC = 2.7 V; VSW = 0 V, 2.3 V
-
0.45
0.7
-
0.8
Ω
-
0.1
-
-
-
Ω
-
7.0
10.0
-
11.0
Ω
-
6.0
9.5
-
10.5
Ω
-
0.2
-
-
-
Ω
ON resistance VI = GND to VCC; ISW = 100 mA
mismatch
VCC = 2.7 V; VSW = 0 V
between
channels
[2]
Data path switches
RON
ON resistance VI = GND to VCC; ISW = 20 mA;
see Figure 7
VCC = 1.8 V; VSW = 0 V, 1.8 V
VCC = 2.7 V; VSW = 0 V, 2.3 V
ΔRON
ON resistance VI = GND to VCC; ISW = 20 mA
mismatch
VCC = 2.7 V; VSW = 0 V
between
channels
[1]
Typical values are measured at Tamb = 25 °C.
[2]
Measured at identical VCC, temperature and input voltage.
NX3DV2567
Product data sheet
[2]
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
11.3 ON resistance test circuit and graphs
001aam602
0.8
RON
(Ω)
(1)
0.6
VSW
(2)
0.4
V
switch
VCC
VIL or VIH
S
nY0
1
nZ
nY1
2
S
1
VIL
2
VIH
0.2
switch
VI
ISW
0
GND
0
1
2
RON = VSW / ISW.
3
VI (V)
001aam601
(1) VCC = 1.8 V.
(2) VCC = 2.7 V.
Fig 7.
Test circuit for measuring ON resistance
001aag566
1.0
RON
(Ω)
Fig 8.
Typical ON resistance as a function of input
voltage (supply path switch)
001aag568
1.0
RON
(Ω)
0.8
0.8
(1)
(2)
(3)
(4)
0.6
0.6
0.4
0.4
0.2
0.2
0
(1)
(2)
(3)
(4)
0
0
1
2
3
0
VI (V)
(1) Tamb = 125 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(4) Tamb = −40 °C.
ON resistance as a function of input voltage;
VCC = 1.8 V (supply path switch)
NX3DV2567
Product data sheet
2
3
VI (V)
(2) Tamb = 85 °C.
Fig 9.
1
Fig 10. ON resistance as a function of input voltage;
VCC = 2.7 V (supply path switch)
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
8 of 20
NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
001aam603
15
RON
(Ω)
13
(1)
11
9
7
(2)
5
0
1
2
3
VI (V)
(1) VCC = 1.8 V.
(2) VCC = 2.7 V.
Fig 11. Typical ON resistance as a function of input voltage (data path switch)
001aam604
15
RON
(Ω)
001aam605
10
RON
(Ω)
13
(1)
(2)
8
11
(3)
(1)
9
(2)
6
(4)
(3)
7
(4)
5
4
0
0.4
0.8
1.2
1.6
2.0
0
VI (V)
(1) Tamb = 125 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(4) Tamb = −40 °C.
NX3DV2567
Product data sheet
2
3
VI (V)
(2) Tamb = 85 °C.
Fig 12. ON resistance as a function of input voltage;
VCC = 1.8 V (data path switch)
1
Fig 13. ON resistance as a function of input voltage;
VCC = 2.7 V (data path switch)
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
12. Dynamic characteristics
Table 9.
Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 16.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC = 1.4 V to 1.6 V
-
41
90
-
120
120
ns
VCC = 1.65 V to 1.95 V
-
30
70
-
80
90
ns
VCC = 2.3 V to 2.7 V
-
20
45
-
50
55
ns
VCC = 2.7 V to 3.6 V
-
19
40
-
45
50
ns
VCC = 3.6 V to 4.3 V
-
19
40
-
45
50
ns
-
24
70
-
80
90
ns
VCC = 1.65 V to 1.95 V
-
15
55
-
60
65
ns
VCC = 2.3 V to 2.7 V
-
9
25
-
30
35
ns
VCC = 2.7 V to 3.6 V
-
8
20
-
25
30
ns
-
8
20
-
25
30
ns
-
20
-
9
-
-
ns
VCC = 1.65 V to 1.95 V
-
17
-
7
-
-
ns
VCC = 2.3 V to 2.7 V
-
13
-
4
-
-
ns
VCC = 2.7 V to 3.6 V
-
11
-
3
-
-
ns
VCC = 3.6 V to 4.3 V
-
11
-
2
-
-
ns
VCC = 1.4 V to 1.6 V
-
40
90
-
120
120
ns
VCC = 1.65 V to 1.95 V
-
29
70
-
80
90
ns
VCC = 2.3 V to 2.7 V
-
20
45
-
50
55
ns
VCC = 2.7 V to 3.6 V
-
19
40
-
45
50
ns
VCC = 3.6 V to 4.3 V
-
19
40
-
45
50
ns
Supply path switch
ten
tdis
enable time
disable time
S to 1Z or 1Y0, 1Y1;
see Figure 14
S to 1Z or 1Y0, 1Y1;
see Figure 14
VCC = 1.4 V to 1.6 V
VCC = 3.6 V to 4.3 V
tb-m
break-before-make see Figure 15
time
VCC = 1.4 V to 1.6 V
[2]
Data path switch
ten
tdis
enable time
disable time
NX3DV2567
Product data sheet
S to nZ or nYn;
see Figure 14
S to nZ or nYn;
see Figure 14
VCC = 1.4 V to 1.6 V
-
21
70
-
80
90
ns
VCC = 1.65 V to 1.95 V
-
13
55
-
60
65
ns
VCC = 2.3 V to 2.7 V
-
8
25
-
30
35
ns
VCC = 2.7 V to 3.6 V
-
7
20
-
25
30
ns
VCC = 3.6 V to 4.3 V
-
7
20
-
25
30
ns
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Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
10 of 20
NX3DV2567
NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
Table 9.
Dynamic characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 16.
Symbol Parameter
tb-m
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
-
23
-
9
-
-
ns
VCC = 1.65 V to 1.95 V
-
19
-
7
-
-
ns
VCC = 2.3 V to 2.7 V
-
15
-
4
-
-
ns
VCC = 2.7 V to 3.6 V
-
13
-
3
-
-
ns
VCC = 3.6 V to 4.3 V
-
12
-
2
-
-
ns
break-before-make see Figure 15
time
VCC = 1.4 V to 1.6 V
[2]
[1]
Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively.
[2]
Break-before-make guaranteed by design.
12.1 Waveform and test circuits
VI
S input
VM
GND
ten
tdis
VOH
nY1 connected to VEXT
VX
nZ output
OFF to HIGH
HIGH to OFF
VX
GND
tdis
VOH
nY0 connected to VEXT
nZ output
HIGH to OFF
OFF to HIGH
ten
VX
VX
GND
001aam606
Measurement points are given in Table 10.
Logic level: VOH is typical output voltage level that occurs with the output load.
Fig 14. Enable and disable times
Table 10.
Measurement points
Supply voltage
Input
Output
VCC
VM
VX
1.4 V to 4.3 V
0.5VCC
0.9VOH
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Low-ohmic four-pole double-throw analog switch
VCC
G
VI
V
VO
RL
S
nY0
nZ
nY1
CL
VEXT = 1.5 V
GND
001aam607
a. Test circuit
VI
0.5VI
0.9VO
0.9VO
VO
tb-m
001aag572
b. Input and output measurement points
Fig 15. Test circuit for measuring break-before-make timing
VCC
G
VI
V
VO
RL
S
nY0
1
nZ
nY1
2
switch
CL
VEXT = 1.5 V
GND
001aam608
Test data is given in Table 11.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 16. Test circuit for measuring switching times
Table 11.
Test data
Supply voltage
Input
VCC
VI
tr, tf
CL
RL
1.4 V to 4.3 V
VCC
≤ 2.5 ns
35 pF
50 Ω
NX3DV2567
Product data sheet
Load
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Low-ohmic four-pole double-throw analog switch
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Data path switch
−3 dB frequency
response
RL = 50 Ω; see Figure 17
αiso
isolation (OFF-state)
fi = 10 MHz; RL = 50 Ω; see Figure 18
Xtalk
crosstalk
between switches;
fi = 10 MHz; RL = 50 Ω; see Figure 19
f(−3dB)
[1]
VCC = 2.7 V to 3.6 V
VCC = 2.7 V to 3.6 V
charge injection
-
MHz
-
−60
-
dB
-
−60
-
dB
-
10
-
pC
fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V;
Rgen = 0 Ω; see Figure 20
VCC = 2.7 V to 3.6 V
[1]
330
[1]
VCC = 2.7 V to 3.6 V
Qinj
[1]
fi is biased at 0.5VCC.
12.3 Test circuits
VCC
VIL or VIH
0.5VCC
S
nY0
1
nZ
nY1
2
RL
switch
fi
switch
S
1
VIL
2
VIH
dB
GND
001aam609
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB.
Fig 17. Test circuit for measuring the frequency response when channel is in ON-state
0.5VCC
0.5VCC
VCC
RL
VIL or VIH
RL
S
nY0
1
nZ
nY1
2
fi
switch
S
1
VIH
2
VIL
switch
dB
GND
001aam610
Adjust fi voltage to obtain 0 dBm level at input.
Fig 18. Test circuit for measuring isolation (OFF-state)
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Product data sheet
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NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
0.5VCC
nY0 or nZ
fi
RL
CHANNEL
ON
nZ or nY0
50 Ω
VO1
V
S
VIL
0.5VCC
RL
nY0 or nZ
nZ or nY0
CHANNEL
OFF
Ri
50 Ω
V
VO2
001aam611
20 log10 (VO2 / VO1) or 20 log10 (VO1 / VO2).
Fig 19. Test circuit for measuring crosstalk between switches
VCC
S
nY0
1
nZ
nY1
2
switch
Rgen
G
VI
V
VO
RL
CL
Vgen
GND
001aam612
a. Test circuit
logic
(S) off
input
on
VO
off
ΔVO
001aam613
b. Input and output pulse definitions
Definition: Qinj = ΔVO × CL.
ΔVO = output voltage variation.
Rgen = generator resistance.
Vgen = generator voltage.
Fig 20. Test circuit for measuring charge injection
NX3DV2567
Product data sheet
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Low-ohmic four-pole double-throw analog switch
13. Package outline
HXQFN16U: plastic thermal enhanced extremely thin quad flat package; no leads;
16 terminals; UTLP based; body 3 x 3 x 0.5 mm
A
B
D
SOT1039-1
terminal 1
index area
E
A
A1
detail X
e1
e
1/2 e
v
w
b
L1
5
M
M
C
C A B
C
y
y1 C
8
L
9
4
e
e2
Eh
1/2 e
1
12
terminal 1
index area
16
13
X
Dh
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
b
D
Dh
E
Eh
e
e1
e2
L
L1
v
w
y
y1
mm
0.5
0.05
0.00
0.35
0.25
3.1
2.9
1.95
1.75
3.1
2.9
1.95
1.75
0.5
1.5
1.5
0.35
0.25
0.1
0.0
0.1
0.05
0.05
0.1
REFERENCES
OUTLINE
VERSION
IEC
SOT1039-1
---
JEDEC
JEITA
---
EUROPEAN
PROJECTION
ISSUE DATE
07-11-14
07-12-01
Fig 21. Package outline SOT1039-1 (HXQFN16U)
NX3DV2567
Product data sheet
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Rev. 1 — 28 September 2010
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NXP Semiconductors
Low-ohmic four-pole double-throw analog switch
XQFN16: plastic, extremely thin quad flat package; no leads;
16 terminals; body 1.80 x 2.60 x 0.50 mm
SOT1161-1
X
A
B
D
terminal 1
index area
A
E
A1
A3
detail X
e1
e
5
8
C
C A B
C
v
w
b
y1 C
y
L
4
9
e
e2
1
12
terminal 1
index area
16
L1
13
0
1
scale
Dimensions
Unit(1)
mm
max
nom
min
2 mm
A
A1
0.5
0.05
A3
b
0.25
0.127 0.20
0.00
0.15
D
E
1.9
1.8
1.7
2.7
2.6
2.5
e
e1
0.4
1.2
e2
1.2
L
L1
0.45 0.55
0.40 0.50
0.35 0.45
v
0.1
w
y
y1
0.05 0.05 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
References
Outline
version
IEC
JEDEC
JEITA
SOT1161-1
---
---
---
sot1161-1_po
European
projection
Issue date
09-12-28
09-12-29
Fig 22. Package outline SOT1161-1 (XQFN16)
NX3DV2567
Product data sheet
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Rev. 1 — 28 September 2010
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Low-ohmic four-pole double-throw analog switch
14. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal-Oxide Semiconductor
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
PDA
Personal Digital Assistant
TTL
Transistor-Transistor Logic
15. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX3DV2567 v.1
20100928
Product data sheet
-
-
NX3DV2567
Product data sheet
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16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
NX3DV2567
Product data sheet
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
NX3DV2567
Product data sheet
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Rev. 1 — 28 September 2010
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18. Contents
1
2
3
4
5
6
7
7.1
7.2
8
9
10
11
11.1
11.2
11.3
12
12.1
12.2
12.3
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 7
ON resistance test circuit and graphs. . . . . . . . 8
Dynamic characteristics . . . . . . . . . . . . . . . . . 10
Waveform and test circuits . . . . . . . . . . . . . . . 11
Additional dynamic characteristics . . . . . . . . . 13
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 September 2010
Document identifier: NX3DV2567
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