AP9465AGH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
40V
RDS(ON)
32mΩ
ID
G
15A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
□
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
The through-hole version (AP9465AGJ) are available for low-profile
applications.
G
D
S
TO-252(H)
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current
15
A
ID@TC=100℃
Continuous Drain Current
9.8
A
50
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
12.5
W
Linear Derating Factor
0.1
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
10.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200903092
AP9465AGH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=12A
-
-
32
mΩ
VGS=4.5V, ID=8A
-
-
45
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=32V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=12A
-
8
13
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.7
-
nC
VDS=20V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=12A
-
23
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=1.67Ω
-
3.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
485
780
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
IS=12A, VGS=0V
-
-
1.2
V
IS=12A, VGS=0V,
-
19
-
ns
dI/dt=100A/µs
-
13
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9465AGH/J
50
40
10V
7.0 V
5.0V
4.5 V
ID , Drain Current (A)
40
10V
7 .0V
5.0V
4.5 V
T C =150 o C
ID , Drain Current (A)
o
T C =25 C
30
20
V G = 3.0 V
30
20
V G =3.0V
10
10
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
2.0
I D =12A
I D =12A
V G =10V
T C =25 o C
36
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
32
28
1.2
0.8
24
0.4
20
2
4
6
8
-50
10
0
50
100
150
200
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.6
Normalized VGS(th) (V)
16
12
IS(A)
o
T j =150 C
T j =25 o C
8
1.2
0.8
0.4
4
0
0.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9465AGH/J
f=1.0MHz
1000
C iss
I D =12A
12
V DS =20V
V DS =24V
V DS =32V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss
C rss
4
10
0
0
4
8
12
16
1
20
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
ID (A)
10
100us
1ms
1
o
T C =25 C
Single Pulse
10ms
100ms
DC
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
ID , Drain Current (A)
V DS =5V
VG
30
T j =25 o C
QG
T j =150 o C
4.5V
QGS
20
QGD
10
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4