MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R1K0CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 1Description DPAK CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. IPAK tab 1 tab 2 1 3 2 3 Drain Pin 2 Features1) •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •Pb-freeleadplating;RoHScompliant;availablewithhalogenfreeand non-halogenfreemoldcompound1) Gate Pin 1 Source Pin 3 Benefits •Increasedpowerdensitysolutionsduetosmallerpackage •Systemcost/sizesavingsduetoreducedcoolingrequirements •Highersystemreliabilityduetolowoperatingtemperatures Applications •LEDLightingforretrofitapplicationsinQRFlybacktopology Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 0.95 Ω Qg,typ 31 nC ID,pulse 18 A VGS(th),typ 3 V CO(tr),typ 69 pF Type/OrderingCode Package IPD80R1K0CE PG-TO 252 IPU80R1K0CE PG-TO 251 1) Marking 8R1K0CE RelatedLinks see Appendix A Halogen free version is available with OPN: IPD80R1K0CEAT Final Data Sheet 2 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) Values Unit Note/TestCondition 5.7 3.6 A TC=25°C TC=100°C - 18 A TC=25°C - - 230 mJ ID=1.6A;VDD=50V EAR - - 0.20 mJ ID=1.6A;VDD=50V Avalanche current, repetitive IAR - - 1.6 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) - - 83 W TC=25°C Min. Typ. Max. ID - - Pulsed drain current 2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Power dissipation (non FullPAK) TO-252, Ptot TO-251 Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 5.7 A TC=25°C Diode pulse current2) IS,pulse - - 18 A TC=25°C dv/dt - - 4 V/ns VDS=0...400V,ISD≤IS,Tj=25°C dif/dt - - 400 A/µs VDS=0...400V,ISD≤IS,Tj=25°C Reverse diode dv/dt 3) Maximum diode commutation speed 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK,IPAK Parameter Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wave- & reflowsoldering allowed 4) Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.5 °C/W - RthJA - 35 62 - SMD version, device on PCB, minimal footprint °C/W SMD version, device on PCB, 6cm2 cooling area4) Tsold - - 260 °C reflow MSL 1 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. 2) Final Data Sheet 4 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3 3.9 V VDS=VGS,ID=0.25mA - 50 10 - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.8 2.2 0.95 - Ω VGS=10V,ID=3.6A,Tj=25°C VGS=10V,ID=3.6A,Tj=150°C Gate resistance RG - 1.2 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 800 - Gate threshold voltage V(GS)th 2.1 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 785 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 33 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) - 26 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related Co(tr) - 69 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=0/10V,ID=5.7A, RG=15Ω Rise time tr - 15 - ns VDD=400V,VGS=0/10V,ID=5.7A, RG=15Ω Turn-off delay time td(off) - 72 - ns VDD=400V,VGS=0/10V,ID=5.7A, RG=15Ω Fall time tf - 8 - ns VDD=400V,VGS=10V,ID=5.7A, RG=15Ω Unit Note/TestCondition 2) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 4 - nC VDD=640V,ID=5.7A,VGS=0to10V Gate to drain charge Qgd - 15 - nC VDD=640V,ID=5.7A,VGS=0to10V Gate charge total Qg - 31 - nC VDD=640V,ID=5.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=640V,ID=5.7A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2) Final Data Sheet 5 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition 1.2 V VGS=0V,IF=5.7A,Tj=25°C 520 - ns VR=400V,IF=5.7A,diF/dt=100A/µs - 5 - µC VR=400V,IF=5.7A,diF/dt=100A/µs - 18 - A VR=400V,IF=5.7A,diF/dt=100A/µs Min. Typ. Max. VSD - 1 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 90 80 70 101 50 10 µs ID[A] Ptot[W] 60 40 1 µs 100 µs 1 ms DC 100 30 10 ms 20 10 0 0 25 50 75 100 125 10-1 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Max.transientthermalimpedance Diagram4:Typ.outputcharacteristics 1 10 20 20 V 15 10 V ZthJC[K/W] 100 0.5 ID[A] 0.2 0.1 0.05 0.02 10-1 10 6.5 V 6V 0.01 single pulse 5 5.5 V 5V 10-2 10-5 10-4 10-3 10-2 10-1 tp[s] 0 5 10 15 20 25 VDS[V] ZthJC=f(tP);parameter:D=tp/T Final Data Sheet 0 ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS 7 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceon-stateresistance 12 4.2 3.8 20 V 9 10 V 3.4 6 RDS(on)[Ω] ID[A] 6V 5.5 V 3.0 4.5 V 2.6 5V 5.5 V 6V 10 V 5V 2.2 3 4.5 V 0 0 5 10 15 20 V 1.8 20 1.4 25 0 3 6 VDS[V] 9 ID[A] ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS RDS(on)=f(ID);Tj=150°C;parameter:VGS Diagram7:Drain-sourceon-stateresistance Diagram8:Typ.transfercharacteristics 2.4 20 25 °C 2.0 15 ID[A] RDS(on)[Ω] 1.6 1.2 98 % typ 150 °C 10 0.8 5 0.4 0.0 -60 -20 20 60 100 140 180 Tj[°C] 0 2 4 6 8 10 VGS[V] RDS(on)=f(Tj);ID=3.6A;VGS=10V Final Data Sheet 0 ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj 8 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Diagram9:Typ.gatecharge Diagram10:Forwardcharacteristicsofreversediode 102 10 150°C (98%) 8 160 V 640 V 150 °C 101 25 °C 25°C (98%) IF[A] VGS[V] 6 4 100 2 0 0 10 20 30 10-1 40 0.0 0.5 1.0 Qgate[nC] 1.5 2.0 VSD[V] VGS=f(Qgate);ID=5.7Apulsed;parameter:VDD IF=f(VSD);tp=10µs;parameter:Tj Diagram11:Avalancheenergy Diagram12:Drain-sourcebreakdownvoltage 250 960 920 200 880 VBR(DSS)[V] EAS[mJ] 150 100 840 800 760 50 720 0 25 50 75 100 125 150 680 -60 -20 Tj[°C] 60 100 140 180 Tj[°C] EAS=f(Tj);ID=1.6A;VDD=50V Final Data Sheet 20 VBR(DSS)=f(Tj);ID=0.25mA 9 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Diagram13:Typ.capacitances Diagram14:Typ.Cossstoredenergy 104 6 5 Ciss 103 Eoss[µJ] C[pF] 4 102 Coss 3 2 101 Crss 100 0 100 1 200 300 400 500 0 0 VDS[V] 200 300 400 500 600 700 800 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 100 Eoss=f(VDS) 10 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 11 ID VDS Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 12 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Figure2OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 13 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE 8AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.1,2013-07-18 800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE RevisionHistory IPD80R1K0CE, IPU80R1K0CE Revision:2013-07-18,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-06-24 Release of final version 2.1 2013-07-18 update to halogen free mold compound WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.1,2013-07-18