AH102A Medium Power, High Linearity Amplifier Product Features 350 – 3000 MHz +46 dBm Output IP3 14.5 dB Gain +27 dBm P1dB MTTF > 1000 Years Internally Matched • Single +9 V Supply • Lead-free/Green/RoHS-compliant SOT-89 Package • • • • • • Applications • • • • Mobile Infrastructure W-LAN / ISM / WLL / RFID Broadband Wireless PowerAmp Predistortion Circuitry Product Description Functional Diagram The AH102A is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and an internally matched device makes it ideal for both narrow and broadband applications. GND Superior thermal design allows the product to achieve +46 dBm IP3 performances at a mounting temperature of +85 °C with an associated MTTF of greater than 1000 years. The AH102A is available in the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. Operational Bandwidth Test Frequency Gain Output IP3 (2) Output P1dB Noise Figure Test Frequency Gain Output IP3 (2) Output P1dB Operating Current Range Supply Voltage 1 2 3 RF IN GND RF OUT Function Input Ground Output / Bias Ground The broadband amplifier uses a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH102A will work for other applications within the 250 to 3000 MHz frequency range such as broadband wireless. Specifications (1) Parameter 4 Pin No. 1 2 3 4 Typical Performance (3) Units Min MHz MHz dB dBm dBm dB MHz dB dBm dBm mA V Typ 350 12.5 +43 11.5 +42 800 14.4 +46 +27 3.1 1900 13 +44.5 +27 200 +9 Max Parameter 3000 Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power Units @ -45 dBc ACPR W-CDMA Channel Power @ -45 dBc ACLR 230 1. Test conditions unless otherwise noted: T = 25 ºC, Vdd = +9 V in a 50 ohm test fixture. 2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Noise Figure Supply Current Supply Voltage Typical MHz dB dB dB dBm dBm 900 14.5 22 30 +27 +46 1900 13.6 16 15 +27 +45 dBm +21 +20 dBm dB mA V 2140 13.5 19 15 +27 +44 +18.2 3.1 3.8 200 +9 3.7 3. Parameters reflect performance in a tuned application circuit. Absolute Maximum Rating Parameter Rating Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth -55 to +150 °C +11 V +17 dBm 160 °C 25 °C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AH102A-G Medium Power, High Linearity Amplifier (lead-free/green/RoHS-compliant SOT-89 package) AH102A-PCB900 900 MHz Fully Assembled Evaluation Board AH102A-PCB2000 1.7-2.2 GHz Fully Assembled Evaluation Board Standard T/R size = 1000 pieces on a 7” reel. TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com June 2012 AH102A Medium Power, High Linearity Amplifier Typical Device Data VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system S-Parameters Output IP3 vs. Frequency Vd = +9V, Temp = 25°C 8 dBm / tone, 10 MHz spacing, Temp = 25°C P1dB vs. Frequency 20 50 28 10 46 26 0 42 24 -10 38 22 -20 34 S11 -30 0 500 S22 S21 1000 1500 2000 2500 3000 20 +7 V +8 V +9 V +7 V 30 +8 V +9 V 18 500 1000 Frequency (MHz) 1500 2000 2500 3000 500 1000 Frequency (MHz) 1500 2000 Frequency (MHz) 2500 3000 S-Parameters (VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -10.52 -14.38 -15.96 -14.26 -12.32 -10.79 -9.66 -8.75 -8.08 -7.37 -6.87 -6.37 -6.00 -5.61 -5.12 -4.66 -4.43 -67.44 -71.97 -79.59 -97.77 -113.84 -127.15 -138.79 -149.08 -157.98 -165.53 -171.92 -178.50 174.94 169.08 162.18 156.21 152.94 16.70 15.99 15.67 15.34 15.05 14.64 14.33 13.99 13.67 13.45 13.24 13.02 12.78 12.59 12.42 12.14 11.96 161.42 164.33 161.23 149.69 136.98 125.04 113.77 102.45 91.00 80.21 69.79 58.73 47.41 36.08 23.91 11.75 5.65 -19.60 -19.33 -19.25 -19.46 -19.68 -20.00 -20.41 -20.76 -21.26 -21.75 -22.32 -22.88 -23.60 -24.44 -25.41 -26.51 -27.12 15.17 4.56 -3.24 -13.66 -22.39 -29.57 -37.29 -43.79 -50.64 -56.57 -63.25 -69.25 -76.47 -82.56 -88.72 -93.74 -96.59 -13.87 -20.59 -31.69 -24.05 -19.28 -16.57 -14.96 -13.80 -12.94 -12.17 -11.48 -11.05 -10.74 -10.46 -10.05 -9.83 -9.68 -71.59 -73.74 -37.96 41.02 34.21 23.81 12.82 1.56 -9.52 -21.95 -34.63 -47.68 -61.29 -74.90 -88.98 -103.94 -110.63 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek (εr=4.2), four layer, 1 oz copper Microstrip line details: width = .026”, spacing = .026” TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com June 2012 AH102A Medium Power, High Linearity Amplifier Application Circuit: 900 MHz (AH102A-PCB900) Typical RF Performance at 25°°C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 IS-95A Ch. Power ID=R1 R=0 Ohm 900 MHz 14.5 dBm 22 dB 30 dB +27 dBm +46 dBm ID=C4 C= 1e4 pF 0805 +9 V ID=C3 C=100 pF ID=L2 L=22 nH ID=C6 C=100 pF ID=C1 C=100 pF +21 dBm @ -45 dBc ACPR Noise Figure Supply Voltage Supply Current ID=L1 L=6.8 nH 3.1 dB +9 V 200 mA NET="AH102A" ID=C2 C=3.3 pF Notes: 1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. 3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit. S11 vs. Frequency S21 vs. Frequency 0 +25 °C 15 -5 -40 °C +85 °C -10 -15 -20 14 13 12 -25 -30 700 0 S 2 2 (d B ) -40 °C S 2 1 (d B ) S 1 1 (d B ) -5 S22 vs. Frequency 16 -40 °C 800 900 11 700 1000 +25 °C 800 -10 -15 -20 -30 700 1000 800 Frequency (MHz) Frequency (MHz) 900 1000 Frequency (MHz) OIP3 vs. Temperature OIP3 vs. Output Power 900 MHz, 8 dBm/ tone frequency = 900 MHz, Temp = 25°C 50 +85 °C -25 +85 °C 900 +25 °C 50 45 45 40 35 40 30 35 25 +7 V +8 V +7 V +9 V 20 +8 V +9 V 30 -40 -20 0 20 40 60 80 0 4 8 12 Temperature (°C) Output Power (dBm) ACPR vs. Channel Power Noise Figure vs. Frequency 900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW 16 Temp = 25 °C -40 5 N o is e F ig u re (d B ) A C P R (d B c ) +25 °C -40 °C -50 +85 °C -60 -70 -80 14 16 18 20 Channel Power (dBm) 22 4 3 2 1 0 700 800 900 1000 Frequency (MHz) TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com June 2012 AH102A Medium Power, High Linearity Amplifier Application Circuit: 1900 / 2140 MHz (AH102A-PCB2000) Typical RF Performance at 25°°C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 IS-95A Ch. Power 1900 13.6 16 15 +27 +45 2140 13.5 19 15 +27 +44 Units dB dB dB dBm dBm +20 @ -45 dBc ACPR ID=C4 C= 1e4 pF 0805 +9 V ID=C3 C=56 pF ID=L2 L=15 nH ID=C6 C=56 pF ID=C1 C=56 pF dBm W-CDMA Ch. Power @ -45 dBc ACLR Noise Figure Supply Voltage Supply Current ID=R1 R=0 Ohm +18.2 dBm 3.7 dB V mA 3.8 +9 200 ID=L1 L=1.8 nH NET="AH102A" ID=C2 C= 1.5 pF Notes: 1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. 3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit. S11 vs. Frequency S21 vs. Frequency S 1 1 (d B ) -5 S 2 1 (d B ) +25 °C -40 °C +85 °C -10 -15 -20 15 0 14 -5 13 12 +25 °C -40 °C +85 °C 11 -25 S 2 2 (d B ) 0 S22 vs. Frequency 1.8 1.9 2 2.1 2.2 1.7 1.8 1.9 Frequency (MHz) 2 2.1 -10 -15 -20 -25 10 1.7 +25 °C -40 °C +85 °C 1.7 2.2 1.8 OIP3 vs. Output Power OIP3 vs. Output Power frequency = 1900 MHz frequency = 2140 MHz 50 50 45 45 40 40 35 35 1.9 2 2.1 2.2 Frequency (MHz) Frequency (MHz) P1dB vs. Frequency 28 -40C +25C P 1 d B (d B m ) 27 -40C +25C 7 8 9 10 11 12 6 7 8 Output Power (dBm) 23 9 10 1.7 11 ACPR vs. Channel Power ACLR vs. Channel Power 2140 MHz, 3GPP W-CDMA, Test Model 1 +64 DPCH, ±5 MHz offset 1.9 2 2.1 2.2 Noise Figure vs. Frequency -40 5 A C L R (d B c ) +85 °C -60 -70 N o is e F ig u re (d B ) +25 °C -40 °C -40 °C -45 +85 °C -50 -55 -60 14 1.8 Frequency (GHz) 1900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW +25 °C -50 +25 °C -40 °C +85 °C Output Power (dBm) -40 A C P R (d B c ) +85C 30 6 25 24 +85C 30 26 16 18 20 Channel Power (dBm) 22 4 3 2 +25 °C -40 °C +85 °C 1 0 14 15 16 17 18 19 1.7 1.8 Channel Power (dBm) TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com 1.9 2.0 2.1 2.2 Frequency (GHz) June 2012 AH102A Medium Power, High Linearity Amplifier AH102A-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AH102A-G will be marked with a “102AG” designator and an alphanumeric lot code. 102AG XXXX-X Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1C Passes ≥ 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ≥ 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 1 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contact the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com June 2012