TriQuint AH102A-G Medium power, high linearity amplifier Datasheet

AH102A
Medium Power, High Linearity Amplifier
Product Features
350 – 3000 MHz
+46 dBm Output IP3
14.5 dB Gain
+27 dBm P1dB
MTTF > 1000 Years
Internally Matched
• Single +9 V Supply
• Lead-free/Green/RoHS-compliant
SOT-89 Package
•
•
•
•
•
•
Applications
•
•
•
•
Mobile Infrastructure
W-LAN / ISM / WLL / RFID
Broadband Wireless
PowerAmp Predistortion Circuitry
Product Description
Functional Diagram
The AH102A is a medium power gain block that offers
excellent dynamic range in a low-cost surface mount
package. The combination of a single supply voltage and
an internally matched device makes it ideal for both narrow
and broadband applications.
GND
Superior thermal design allows the product to achieve +46
dBm IP3 performances at a mounting temperature of +85
°C with an associated MTTF of greater than 1000 years.
The AH102A is available in the environmentally-friendly
lead-free/green/RoHS-compliant SOT-89 package.
Operational Bandwidth
Test Frequency
Gain
Output IP3 (2)
Output P1dB
Noise Figure
Test Frequency
Gain
Output IP3 (2)
Output P1dB
Operating Current Range
Supply Voltage
1
2
3
RF IN
GND
RF OUT
Function
Input
Ground
Output / Bias
Ground
The broadband amplifier uses a high reliability GaAs
MESFET technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH102A will work for other applications within the 250 to
3000 MHz frequency range such as broadband wireless.
Specifications (1)
Parameter
4
Pin No.
1
2
3
4
Typical Performance (3)
Units Min
MHz
MHz
dB
dBm
dBm
dB
MHz
dB
dBm
dBm
mA
V
Typ
350
12.5
+43
11.5
+42
800
14.4
+46
+27
3.1
1900
13
+44.5
+27
200
+9
Max
Parameter
3000
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
Units
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACLR
230
1. Test conditions unless otherwise noted: T = 25 ºC, Vdd = +9 V in a 50 ohm test fixture.
2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule.
Noise Figure
Supply Current
Supply Voltage
Typical
MHz
dB
dB
dB
dBm
dBm
900
14.5
22
30
+27
+46
1900
13.6
16
15
+27
+45
dBm
+21
+20
dBm
dB
mA
V
2140
13.5
19
15
+27
+44
+18.2
3.1
3.8
200
+9
3.7
3. Parameters reflect performance in a tuned application circuit.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
-55 to +150 °C
+11 V
+17 dBm
160 °C
25 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AH102A-G
Medium Power, High Linearity Amplifier
(lead-free/green/RoHS-compliant SOT-89 package)
AH102A-PCB900 900 MHz Fully Assembled Evaluation Board
AH102A-PCB2000 1.7-2.2 GHz Fully Assembled Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com
June 2012
AH102A
Medium Power, High Linearity Amplifier
Typical Device Data
VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system
S-Parameters
Output IP3 vs. Frequency
Vd = +9V, Temp = 25°C
8 dBm / tone, 10 MHz spacing, Temp = 25°C
P1dB vs. Frequency
20
50
28
10
46
26
0
42
24
-10
38
22
-20
34
S11
-30
0
500
S22
S21
1000 1500 2000 2500 3000
20
+7 V
+8 V
+9 V
+7 V
30
+8 V
+9 V
18
500
1000
Frequency (MHz)
1500
2000
2500
3000
500
1000
Frequency (MHz)
1500
2000
Frequency (MHz)
2500
3000
S-Parameters (VDS = +9 V, IDS = 200 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-10.52
-14.38
-15.96
-14.26
-12.32
-10.79
-9.66
-8.75
-8.08
-7.37
-6.87
-6.37
-6.00
-5.61
-5.12
-4.66
-4.43
-67.44
-71.97
-79.59
-97.77
-113.84
-127.15
-138.79
-149.08
-157.98
-165.53
-171.92
-178.50
174.94
169.08
162.18
156.21
152.94
16.70
15.99
15.67
15.34
15.05
14.64
14.33
13.99
13.67
13.45
13.24
13.02
12.78
12.59
12.42
12.14
11.96
161.42
164.33
161.23
149.69
136.98
125.04
113.77
102.45
91.00
80.21
69.79
58.73
47.41
36.08
23.91
11.75
5.65
-19.60
-19.33
-19.25
-19.46
-19.68
-20.00
-20.41
-20.76
-21.26
-21.75
-22.32
-22.88
-23.60
-24.44
-25.41
-26.51
-27.12
15.17
4.56
-3.24
-13.66
-22.39
-29.57
-37.29
-43.79
-50.64
-56.57
-63.25
-69.25
-76.47
-82.56
-88.72
-93.74
-96.59
-13.87
-20.59
-31.69
-24.05
-19.28
-16.57
-14.96
-13.80
-12.94
-12.17
-11.48
-11.05
-10.74
-10.46
-10.05
-9.83
-9.68
-71.59
-73.74
-37.96
41.02
34.21
23.81
12.82
1.56
-9.52
-21.95
-34.63
-47.68
-61.29
-74.90
-88.98
-103.94
-110.63
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek (εr=4.2), four layer, 1 oz copper
Microstrip line details: width = .026”, spacing = .026”
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com
June 2012
AH102A
Medium Power, High Linearity Amplifier
Application Circuit: 900 MHz (AH102A-PCB900)
Typical RF Performance at 25°°C
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
IS-95A Ch. Power
ID=R1
R=0 Ohm
900 MHz
14.5 dBm
22 dB
30 dB
+27 dBm
+46 dBm
ID=C4
C= 1e4 pF
0805
+9 V
ID=C3
C=100 pF
ID=L2
L=22 nH
ID=C6
C=100 pF
ID=C1
C=100 pF
+21 dBm
@ -45 dBc ACPR
Noise Figure
Supply Voltage
Supply Current
ID=L1
L=6.8 nH
3.1 dB
+9 V
200 mA
NET="AH102A"
ID=C2
C=3.3 pF
Notes:
1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.
S11 vs. Frequency
S21 vs. Frequency
0
+25 °C
15
-5
-40 °C
+85 °C
-10
-15
-20
14
13
12
-25
-30
700
0
S 2 2 (d B )
-40 °C
S 2 1 (d B )
S 1 1 (d B )
-5
S22 vs. Frequency
16
-40 °C
800
900
11
700
1000
+25 °C
800
-10
-15
-20
-30
700
1000
800
Frequency (MHz)
Frequency (MHz)
900
1000
Frequency (MHz)
OIP3 vs. Temperature
OIP3 vs. Output Power
900 MHz, 8 dBm/ tone
frequency = 900 MHz, Temp = 25°C
50
+85 °C
-25
+85 °C
900
+25 °C
50
45
45
40
35
40
30
35
25
+7 V
+8 V
+7 V
+9 V
20
+8 V
+9 V
30
-40
-20
0
20
40
60
80
0
4
8
12
Temperature (°C)
Output Power (dBm)
ACPR vs. Channel Power
Noise Figure vs. Frequency
900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW
16
Temp = 25 °C
-40
5
N o is e F ig u re (d B )
A C P R (d B c )
+25 °C
-40 °C
-50
+85 °C
-60
-70
-80
14
16
18
20
Channel Power (dBm)
22
4
3
2
1
0
700
800
900
1000
Frequency (MHz)
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com
June 2012
AH102A
Medium Power, High Linearity Amplifier
Application Circuit: 1900 / 2140 MHz (AH102A-PCB2000)
Typical RF Performance at 25°°C
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
IS-95A Ch. Power
1900
13.6
16
15
+27
+45
2140
13.5
19
15
+27
+44
Units
dB
dB
dB
dBm
dBm
+20
@ -45 dBc ACPR
ID=C4
C= 1e4 pF
0805
+9 V
ID=C3
C=56 pF
ID=L2
L=15 nH
ID=C6
C=56 pF
ID=C1
C=56 pF
dBm
W-CDMA Ch. Power
@ -45 dBc ACLR
Noise Figure
Supply Voltage
Supply Current
ID=R1
R=0 Ohm
+18.2
dBm
3.7
dB
V
mA
3.8
+9
200
ID=L1
L=1.8 nH
NET="AH102A"
ID=C2
C= 1.5 pF
Notes:
1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.
S11 vs. Frequency
S21 vs. Frequency
S 1 1 (d B )
-5
S 2 1 (d B )
+25 °C
-40 °C
+85 °C
-10
-15
-20
15
0
14
-5
13
12
+25 °C
-40 °C
+85 °C
11
-25
S 2 2 (d B )
0
S22 vs. Frequency
1.8
1.9
2
2.1
2.2
1.7
1.8
1.9
Frequency (MHz)
2
2.1
-10
-15
-20
-25
10
1.7
+25 °C
-40 °C
+85 °C
1.7
2.2
1.8
OIP3 vs. Output Power
OIP3 vs. Output Power
frequency = 1900 MHz
frequency = 2140 MHz
50
50
45
45
40
40
35
35
1.9
2
2.1
2.2
Frequency (MHz)
Frequency (MHz)
P1dB vs. Frequency
28
-40C
+25C
P 1 d B (d B m )
27
-40C
+25C
7
8
9
10
11
12
6
7
8
Output Power (dBm)
23
9
10
1.7
11
ACPR vs. Channel Power
ACLR vs. Channel Power
2140 MHz, 3GPP W-CDMA, Test Model 1 +64 DPCH, ±5 MHz offset
1.9
2
2.1
2.2
Noise Figure vs. Frequency
-40
5
A C L R (d B c )
+85 °C
-60
-70
N o is e F ig u re (d B )
+25 °C
-40 °C
-40 °C
-45
+85 °C
-50
-55
-60
14
1.8
Frequency (GHz)
1900 MHz, IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW
+25 °C
-50
+25 °C
-40 °C
+85 °C
Output Power (dBm)
-40
A C P R (d B c )
+85C
30
6
25
24
+85C
30
26
16
18
20
Channel Power (dBm)
22
4
3
2
+25 °C
-40 °C
+85 °C
1
0
14
15
16
17
18
19
1.7
1.8
Channel Power (dBm)
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com
1.9
2.0
2.1
2.2
Frequency (GHz)
June 2012
AH102A
Medium Power, High Linearity Amplifier
AH102A-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The AH102A-G will be marked with a
“102AG” designator and an alphanumeric lot
code.
102AG
XXXX-X
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes ≥ 1000V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes ≥ 1000V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 1 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contact the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com
June 2012
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