Fairchild FDMC2523P P-channel qfetâ® -150v, -3a, 1.5î© Datasheet

FDMC2523P
P-Channel QFET®
-150V, -3A, 1.5Ω
Features
General Description
„ Max rDS(on) = 1.5Ω at VGS = -10V, ID = -1.5A
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC
motor control.
„ Low Crss ( typical 10pF)
„ Fast Switching
„ Low gate charge ( typical 6.2 nC )
„ Improved dv / dt capability
„ RoHS Compliant
Application
„ Active Clamp Switch
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
S
D
S
D
S
D
G
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
-Continuous
Ratings
-150
Units
V
±30
V
TC = 25°C
-3
TC = 100°C
-1.8
-Pulsed
A
-12
PD
Power Dissipation (Steady State)
TJ, TSTG
Operating and Storage Junction Temperature Range
TC = 25°C
TL
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
dv/dt
Peak Diode Recovery dv/dt
42
W
-55 to +150
°C
300
°C
-5
V/ns
(Note 2)
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Note 1)
3.0
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC2523P
Device
FDMC2523P
©2012 Fairchild Semiconductor Corporation
FDMC2523P Rev.C3
Package
MLP 3.3x3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC2523P P-Channel QFET®
November 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250μA, VGS = 0V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
-150
ID = -250μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
-138
VDS = -150V, VGS = 0V
mV/°C
-1
TJ = 125°C
-10
VGS = ±30V, VDS = 0V
μA
±100
nA
-5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
-3
ID = -250μA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
-3.8
6
mV/°C
VGS = -10V, ID = -1.5A
1.1
1.5
VGS = -10V, ID = -1.5A , TJ = 125°C
2.0
3.6
VDS = -40V, ID = -1.5A
1.4
(Note 4)
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -25V, VGS = 0V,
f = 1MHz
f = 1MHz
200
270
pF
60
80
pF
10
15
pF
Ω
7.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -75V, ID = -3A
VGS = -10V, RGEN = 25Ω
(Note 3,4)
VGS = -10V
VDD = -75V
ID = -3A
(Note 3,4)
15
27
11
20
ns
ns
19
35
ns
13
24
ns
6.2
9
nC
1.4
nC
3.3
nC
Drain-Source Diode Characteristics
IS
Maximum continuous Drain - Source Diode Forward Current
-3
A
ISM
Maximum Pulse Drain - Source Doide Forward Current
-12
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = -3.0A
trr
Reverse Recovery Time
IF = -3.0A, di/dt = 100A/μs
Qrr
Reverse Recovery Charge
-1.8
(Note 3)
-5
V
93
ns
0.27
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
b.135°C/W when mounted on a
minimum pad of 2 oz copper
2: ISD < -3A, dI/dt < 300A/us, VDD < BVDSS, Starting TJ = 25°C
3: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
4: Essentially independent of operating temperature.
FDMC2523P Rev.C3
2
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FDMC2523P P-Channel QFET®
Electrical Characteristics TJ = 25°C unless otherwise noted
FDMC2523P P-Channel QFET®
Typical Characteristics TJ = 25°C unless otherwise noted
1.6
- ID, DRAIN CURRENT (A)
VGS = -10V
2.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3.0
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
VGS = -8V
2.0
VGS = -7V
VGS = -9V
1.5
1.0
VGS = -6V
0.5
0.0
0
2
4
6
8
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
VGS = -8V
VGS = -9V
1.0
VGS = -10V
0.8
0.0
10
0.5
1.0
1.5
2.0
2.5
3.0
-ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.1
4.0
ID = -3A
VGS = -10V
1.8
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (Ω)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -7V
1.2
Figure 1. On-Region Characteristics
1.5
1.2
0.9
0.6
0.3
-50
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
3.5
ID = -0.75A
3.0
2.5
TJ = 125oC
2.0
1.5
TJ = 25oC
1.0
-25
0
25
50
75
100
125
150
5
TJ, JUNCTION TEMPERATURE (oC)
- IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
VDD = -5V
2.0
1.5
TJ = 125oC
1.0
TJ = 25oC
0.5
TJ = -55oC
0.0
2
3
4
5
6
7
-VGS, GATE TO SOURCE VOLTAGE (V)
8
Figure 5. Transfer Characteristics
FDMC2523P Rev.C3
7
8
9
10
Figure 4. On-Resistance vs Gate to
Source Voltage
3.0
2.5
6
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
- ID, DRAIN CURRENT (A)
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
VGS = -6V
10
VGS = 0V
1
TJ = 125oC
0.1
0.01
1E-3
1E-4
0.0
TJ = 25oC
TJ = -55oC
0.5
1.0
1.5
2.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
2.5
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDMC2523P P-Channel QFET®
10
1000
ID = -3A
VDD = -50V
8
Ciss
VDD = -75V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
Typical Characteristics TJ = 25°C unless otherwise noted
VDD = -100V
6
4
2
100
Coss
10
Crss
f = 1MHz
VGS = 0V
0
0
2
4
6
Qg, GATE CHARGE(nC)
1
8
0
Figure 7. Gate Charge Characteristics
50
75
100
125
150
Figure 8. Capacitance vs Drain
to Source Voltage
6
40
rDS(on) LIMITED
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 125oC
1
100us
1
1ms
10ms
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
0.01
1s
10s
DC
o
RθJA = 135 C/W
TA = 25oC
0.5
-2
10
-1
0
10
1
10
10
1E-3
20
1
10
100
400
VDS, DRAIN to SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE(μs)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
P(PK), PEAK TRANSIENT POWER (W)
500
TA = 25oC
100
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
I = I25
150 – T
A
-----------------------125
SINGLE PULSE
o
1
0.5
-4
10
RθJA = 135 C/W
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
0
10
1
10
2
10
3
10
Figure 11. Single Pulse Maximum Power Dissipation
FDMC2523P Rev.C3
4
www.fairchildsemi.com
FDMC2523P P-Channel QFET®
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 135 C/W
1E-3
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
FDMC2523P Rev.C3
5
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FDMC2523P P-Channel QFET®
Dimensional Outline and Pad Layout
FDMC2523P Rev.C3
6
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tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
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Rev. I61
FDMC2523P Rev. C3
7
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FDMC2523P P-Channel QFET®
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