Preliminary Data Sheet NP60N04MUK, NP60N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP60N04MUK-S18-AY *1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube NP60N04NUK-S18-AY *1 Note: Package TO-220 (MP-25K) TO-262 (MP-25SK) *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 20 60 240 105 1.8 175 –55 to 175 28 78 Unit V V A A W W °C °C A mJ Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 Rth(ch-C) Rth(ch-A) 1.43 83.3 °C/W °C/W Page 1 of 6 NP60N04MUK, NP60N04NUK Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. — — 2.0 22 — — — — — — — — — — — — — — TYP. — — 3.0 44 3.6 2450 340 140 19 9 45 7 42 11 11 0.9 44 40 MAX. 1 100 4.0 — 4.3 3680 510 260 50 30 90 20 63 — — 1.5 — — Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 30 A VGS = 10 V, ID = 30 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 30 A VGS = 10 V RG = 0 VDD = 32 V VGS = 10 V ID = 60 A IF = 60 A, VGS = 0 V IF = 60 A, VGS = 0 V di/dt = 100 A/s *1 Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% ID IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 Page 2 of 6 NP60N04MUK, NP60N04NUK Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 PT - Total Power Disslpation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 100 80 60 40 20 0 175 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 PW =1 ID(DC) = 60 A Power Dissipation Limited PW s 0m =1 Secondary Breakdown Limited ms 1 μs =1 10 00 PW ID - Drain Current - A ID(Pulse) = 240 A RDS(ON) Limited 100 (VGS=10 V) 0.1 0.1 DC TC = 25°C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 1.43°C/W 1 0.1 Single pulse 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 Page 3 of 6 NP60N04MUK, NP60N04NUK DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 300 ID - Drain Curent - A 10 200 150 100 50 RDS(on) - Drain to Source On-State Resistance - mΩ 0 0.2 0.4 0.6 0.8 1 0.1 0.001 1.0 VDS = 10 V Pulsed 0 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 |yfs| - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 TA = –55°C 25°C 85°C 150°C 175°C 0.01 VGS = 10 V Pulsed 3 2 1 VDS = VGS ID = 250 μA 0 –100 –50 0 50 100 150 200 100 TA = –55°C 25°C 85°C 150°C 175°C 10 VDS = 5 V Pulsed 1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 8 7 6 5 4 3 2 VGS = 10 V Pulsed 1 0 1 10 100 ID - Drain Current - A R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 250 8 7 6 5 4 3 2 ID = 30 A Pulsed 1 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 8 7 6 5 4 3 2 VGS = 10 V ID = 30 A Pulsed 1 0 –100 –50 0 50 100 150 1000 Coss VGS = 0 V f = 1 MHz 100 0.1 200 Crss 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 35 1000 100 td(off) td(on) tr 10 tf VDD = 20 V VGS = 10 V RG = 0 Ω 1 0.1 1 10 14 30 12 VDD = 32 V 20 V 8V 25 10 8 20 6 15 VGS 4 10 VDS 5 0 100 0 5 10 15 20 ID = 60 A 25 30 35 40 ID - Drain Current - A QG- Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 VGS = 0 V 10 1 Pulsed 0 0.2 0.4 0.6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 1.2 trr - Reverse Recovery Time - ns VGS = 10 V 0.1 2 0 45 100 1000 IF - Diode Forward Current - A Ciss VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF 10000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ NP60N04MUK, NP60N04NUK 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 NP60N04MUK, NP60N04NUK Package Drawing (Unit: mm) TO-220 (MP-25K) (Mass: 1.9 g TYP.) 3 0.8±0.1 2.54 TYP. 2.54 TYP. 1.27±0.2 3.1±0.2 2 13.7±0.3 1 6.3±0.3 4 4.45±0.2 1.3±0.2 15.9 MAX. 3.8±0.2 2.8±0.3 10.0±0.2 0.5±0.2 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 3 10.1±0.3 2 13.7±0.3 1 4.45±0.2 1.3±0.2 0.8±0.1 2.54 TYP. 2.54 TYP. 1.27±0.2 3.1±0.3 4 8.9±0.2 10.0±0.2 1.2±0.3 TO-262 (MP-25SK) (Mass: 1.8 g TYP.) 0.5±0.2 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) Equivalent Circuit Drain Body Diode Gate Source Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 Page 6 of 6 Revision History Rev. 1.00 Date Jan 11, 2012 NP60N04MUK, NP60N04NUK Data Sheet Description Summary Page — First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 1.1