APT20M16B2FLL
APT20M16LFLL
200V 100A 0.016Ω
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M16B2FLL_LFLL
UNIT
200
Volts
Drain-Source Voltage
Continuous Drain Current
7
100
@ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
400
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
100
(Repetitive and Non-Repetitive)
1
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 50A)
TYP
MAX
UNIT
Volts
0.016
Ohms
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
5-2004
Characteristic / Test Conditions
050-7044 Rev C
Symbol
APT20M16 B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 100V
tf
ID = 100A @ 25°C
RG = 0.6Ω
4
INDUCTIVE SWITCHING @ 25°C
850
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VDD = 133V, VGS = 15V
6
nC
ns
930
ID = 100A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
µJ
935
VDD = 133V, VGS = 15V
ID = 100A, RG = 5Ω
UNIT
pF
145
140
65
120
15
31
29
ID = 100A @ 25°C
Turn-off Delay Time
MAX
7220
2330
VDD = 100V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
Test Conditions
Ciss
985
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
100
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
400
Diode Forward Voltage
2
(VGS = 0V, IS = -100A)
1.3
Volts
8
V/ns
Peak Diode Recovery
dt
MAX
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
230
Tj = 125°C
450
Q rr
Reverse Recovery Charge
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
0.9
Tj = 125°C
3.4
IRRM
Peak Recovery Current
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
11
Tj = 125°C
20
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.7
0.12
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
5-2004
050-7044 Rev C
0.9
0.08
0.3
t2
0.1
0.05
0
10-5
t1
Duty Factor D = t1/t2
0.04
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 The maximum current is limited by lead temperature
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.16
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT20M16B2FLL_LFLL
300
VGS=15V
Junction
temp. (°C)
0.0271
Power
(watts)
0.0656
0.0859
0.00899F
0.0210F
0.293F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
10V
250
9V
200
8.5V
150
8V
100
7.5V
7V
50
6.5V
Case temperature. (°C)
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
200
150
100
TJ = +25°C
50
TJ = +125°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
120
100
Lead Limited
GS
1.3
1.2
1.1
VGS=10V
1.0
0.9
VGS=20V
0.8
0
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
1.05
1.00
0.95
0.90
-50
= 50A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
20
40
60 80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.1
1.0
0.9
0.8
5-2004
80
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
V
= 10V @ 50A
1.15
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.4
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7044 Rev C
250
TJ = -55°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
300
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
10,000
100µS
50
1mS
10
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
= 100A
D
14
VDS=40V
12
10
VDS=100V
8
VDS=160V
6
4
2
0
0
20
40 60 80 100 120 140 160 180 200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Coss
1,000
500
Crss
100
TJ =+150°C
50
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
90
V
G
J
R
DD
G
L = 100µH
= 133V
= 5Ω
tr and tf (ns)
V
60
T = 125°C
J
L = 100µH
40
30
td(on)
20
100
tf
80
60
tr
40
20
10
20
40
0
80
100 120 140 160
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
V
DD
R
G
60
80
100 120 140 160
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
20
V
Eoff
I
3000
diode reverse recovery
1000
Eon
SWITCHING ENERGY (µJ)
Eon and Eoff (µJ)
E ON includes
5-2004
DD
D
= 133V
= 100A
J
L = 100µH
500
60
T = 125°C
J
1500
40
3500
= 133V
= 5Ω
T = 125°C
050-7044 Rev C
= 133V
= 5Ω
T = 125°C
120
70
DD
R
140
td(off)
80
0
5,000
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
220
100
50
Ciss
100
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
100
1
td(on) and td(off) (ns)
APT20M16B2FLL_LFLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
400
L = 100µH
E ON includes
2500
Eoff
diode reverse recovery
2000
Eon
1500
1000
500
0
20
40
60
80
100 120 140 160
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT20M16B2FLL_LFLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
td(on)
Drain Voltage
tf
tr
90%
90%
Drain Current
10%
0
5%
5%
T 125°C
J
10%
Drain Current
Drain Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline (B2FLL)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline (LFLL)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7044 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)